Creation of Nano-device/CMOS Merged Three Dimensional Integrated Circuits Using Shape-Functionalized Micro-interconnect
使用形状功能化微互连创建纳米器件/CMOS 合并三维集成电路
基本信息
- 批准号:21246061
- 负责人:
- 金额:$ 30.37万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2009
- 资助国家:日本
- 起止时间:2009 至 2012
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Bonding mechanism of cone-shaped microbump electrode, which was invented by the leader of this project research, has been investigated. Application of the mechanism to development of three dimensional integration of semiconductor circuits has also been investigated. This project achieved room temperature bonding of high density micro interconnect, which was not able to carry out using existing technology. The developed technology has been applied to integration of heterogeneous integration on silicon. As anexample, a high-resolution near infrared image sensor has been fabricated using the developed technology.
该项目研究领导者发明的锥形微气象电极的粘结机制已进行了研究。还研究了该机制在半导体电路的三维整合发展中的应用。该项目实现了高密度微互连的室温键合,该连接无法使用现有技术进行。已开发的技术已应用于硅上异质整合的整合。作为示例,已经使用已开发的技术制造了红外图像传感器附近的高分辨率。
项目成果
期刊论文数量(98)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump
使用金锥体凸点机械填缝将 LSI 芯片室温微接合在聚萘二甲酸乙二醇酯薄膜上
- DOI:10.1143/jjap.51.04db04
- 发表时间:2012
- 期刊:
- 影响因子:0
- 作者:T. Shuto;N. Watanabe;A. Ikeda;and T. Asano
- 通讯作者:and T. Asano
Investigation of Enhanced Impact Ionization in Uniaxially Strained Si n-Channel Metal Oxide Semiconductor Field Effect Transistor
- DOI:10.1143/jjap.49.04dc14
- 发表时间:2010-04
- 期刊:
- 影响因子:1.5
- 作者:S. Adachi;T. Asano
- 通讯作者:S. Adachi;T. Asano
Room Temperature Microjoining of qVGA Class Area-Bump Array Using Cone Bump
使用锥形凸块的 qVGA 级区域凸块阵列的室温微连接
- DOI:
- 发表时间:2012
- 期刊:
- 影响因子:0
- 作者:T. Shuto;K. Iwanabe;L. Qiu;and T. Asano
- 通讯作者:and T. Asano
Selective Heating of Microbumps Using Microwave for Low Strain Heterogeneous Chip Stack Integration
使用微波选择性加热微凸块以实现低应变异质芯片堆栈集成
- DOI:
- 发表时间:2011
- 期刊:
- 影响因子:0
- 作者:L.Qiu;T.Asano
- 通讯作者:T.Asano
A Liquid-Phase Bonding for High Density Chip-Stack Interconnection
用于高密度芯片堆叠互连的液相键合
- DOI:
- 发表时间:2010
- 期刊:
- 影响因子:0
- 作者:L.Qiu;N.Watanabe;T.Asano
- 通讯作者:T.Asano
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ASANO Tanemasa其他文献
ASANO Tanemasa的其他文献
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{{ truncateString('ASANO Tanemasa', 18)}}的其他基金
Study on high-speed doping mechanism of wet laser processing
湿法激光加工高速掺杂机理研究
- 批准号:
25289105 - 财政年份:2013
- 资助金额:
$ 30.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Study of the Formation of Single-Crystal Silicon Thin-Film Using Nanoimprint Seeding
纳米压印晶种形成单晶硅薄膜的研究
- 批准号:
18360025 - 财政年份:2006
- 资助金额:
$ 30.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Position and Orientation Control of Si Thin-Film Crystal Grain Using Nano-Imprint Technology
利用纳米压印技术控制硅薄膜晶粒的位置和取向
- 批准号:
15360022 - 财政年份:2003
- 资助金额:
$ 30.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Thin-Film-Transistor and Its Layr-Structured Circuitry for Signal Prosessing Based on Probability
基于概率的薄膜晶体管及其层状信号处理电路
- 批准号:
08650406 - 财政年份:1996
- 资助金额:
$ 30.37万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Investigation of Electron-Wave Interference Vacuum Microelectronics Devices
电子波干涉真空微电子器件研究
- 批准号:
05555010 - 财政年份:1993
- 资助金额:
$ 30.37万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Fundamental Research of Single-Atomic Memories
单原子存储器的基础研究
- 批准号:
03452083 - 财政年份:1991
- 资助金额:
$ 30.37万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
相似海外基金
A Study of 3D Integration Based on Reconfigurable Bonding
基于可重构键合的3D集成研究
- 批准号:
22360136 - 财政年份:2010
- 资助金额:
$ 30.37万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Three-Dimensionally Stacked Hetero-Chip Fabrication by Self-Assembly
自组装三维堆叠异质芯片制造
- 批准号:
19686022 - 财政年份:2007
- 资助金额:
$ 30.37万 - 项目类别:
Grant-in-Aid for Young Scientists (A)