Graphene atomic film transistor with gate-tunable band-gap

具有栅极可调带隙的石墨烯原子膜晶体管

• 批准号: 21241038
• 负责人: TSUKAGOSHI Kazuhito
• 金额: $ 30.12万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21241038/
• 关键词: グラフェン; 電気伝導; 電界効果; 基礎物性; 自己形成; グラフェン; 電気伝導; 電界効果; 基礎物性; 自己形成

We have realized a practical wide band gap in bilayer graphene. The gap was induced by an electric field applied by dual-gate sandwiching the bilayer graphene. A self-assembled gate insulator enabled us to apply a large electric field which enhanced the band gap. The wide band gap allowed for operation of a logic gate composed of bilayer graphene transistors. These results predict that graphene electronics will possibly be realized as emerging transistors with an atomically thin semiconductor.

我们已经意识到双层石墨烯中实用的宽带隙。该间隙是由双门夹克将双层石墨烯施加的电场诱导的。一个自组装的门绝缘子使我们能够应用一个大型电场，从而增强了频带隙。宽带间隙允许操作由双层石墨烯晶体管组成的逻辑门。这些结果预测，石墨烯电子产品可能会被实现为具有原子较薄的半导体的新兴晶体管。