A study on improvement and functionalization of non-stoichiometric silicon titanium nitride compounds

非化学计量硅钛氮化物的改性及功能化研究

• 批准号: 17560590
• 负责人: YOSHITAKA Kasukabe
• 金额: $ 2.18万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-17560590/
• 关键词: non-stoichiometric compounds; nitride; functionalized materials; ion implantation; in-situ observation; transmission electron microscope; electron energy loss spectroscope; molecular orbital calculation

Recently, it has been reported that properties of non-stoichiometric titanium nitride compounds (TiN_y), such as electrical conductivity, diffusion barrier, wear resistance, etc. depend not only on chemical composition, but also on orientation relationships between TiN_y films and substrates. Therefore, much interest has been focused on atomistic growth processes of TiN_y films.In order to clarify the atomistic growth processes due to ion implantation and to control the orientation, in-situ observations by using transmission electron microscope and electron energy loss spectroscope have been carried out, along with composition analysis and with the characterization of electronic structure. TiN_y has epitaxially grown in N-implanted Ti films by nitriding both hcp-Ti and TiH_x., or only hcp-Ti with epitaxial orientations in as-deposited Ti films on NaC1 (001) substrates at room temperature or 250 ℃. The characterizations of electronic structure of Ti films before and after implantation indicate that octahedral sites of hcp-Ti with larger space have higher electron density, which leads to the invasion of implanted ions into the octahedral sites, and that the hcp-fcc transformation accompanied with the partial inheritance of atomic arrangement of hcp-Ti is induced by the shear in <01・0> direction on (00・1) plane promoted by the forming of strong covalent bonds mainly consisted of hybridized orbitals due to combination of Ti3d and N2p, and by the weakening of Ti-Ti bonds. In conclusion, atomistic epitaxial growth processes of Ti compound films by ion implantation have been clarified by the approach of the detailed analysis of experimental results, combined with the characterization of electronic structure, which gives rise to a possibility to develop new functionalized Ti compound films with controlled orientations, for example, TiN_y diffusion barriers in Au/α-Sn systems, band-gap-controlled functionalized SiTi_xN_y systems.

最近，据报道，非化学计量钛合金化合物（TIN_Y）的特性，例如电导率，扩散屏障，耐磨性等。不仅取决于化学成分，还取决于TIN_Y膜和底物之间的方向关系。因此，在澄清因离子植入而引起的原子生长过程并控制方向的原子生长过程，通过使用透射电子显微镜和电子能量损失光谱仪，已经对原子植入和控制方向进行了观察，并与电子结构进行了组成分析以及电子结构的表征。 TIN_Y通过硝化HCP-TI和TIH_X。或仅在NAC1（001）在室温下在NAC1（001）底物上的hcp-ti均具有外育式TI膜，在N型植入的Ti膜中生长。植入前后Ti膜的电子结构的表征表明，具有较大空间的HCP-TI的八面体位点具有较高的电子密度，从而导致植入离子入侵八面体部位，而HCP-FCC的hCP-FCC转化则以HCP-TI的偏置为方向而<0> （00 ・1）通过形成强共价键主要由由于TI3D和N2P的组合以及TI-TI键的弱化而促进的平面。 In conclusion, atomistic epitaxial growth processes of Ti compound films by ion implantation have been clarified by the approach of the detailed analysis of experimental results, combined with the characterization of electronic structure, which gives rise to a possibility to develop new functionalized Ti compound films with controlled orientations, for example, TiN_y diffusion barriers in Au/α-Sn systems, band-gap-controlled functionalized SITI_XN_Y系统。

项目成果

Characterization of Deposited and Nitrogen implanted Titanium Films

沉积钛膜和氮注入钛膜的表征

• 发表时间: 2005
• 期刊: e-J. Surf. Sci. Nanotech. 3
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;S.Nishida;J.J.Wang;J.J.Wang
• 通讯作者: J.J.Wang

イオン注入法によるチタン薄膜の窒化機構

离子注入法钛薄膜渗氮机理

• 发表时间: 2006
• 期刊: まてりあ 45巻1号
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆
• 通讯作者: 粕壁善隆

Characterization of Carbonizing Processes of Titanium Thin Films by Carbon-Implantation

碳注入钛薄膜碳化过程的表征

• 发表时间: 2006
• 期刊: JAEA-Review 2006-042
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆;Y.Kasukabe;Y.Kasukabe
• 通讯作者: Y.Kasukabe

Growth Mechanism of Cubic Titanium Nitride Thin Films by Nitrogen-Implantation

氮注入立方氮化钛薄膜的生长机理

• 发表时间: 2006
• 期刊: JAEA-Review 2005-1
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe
• 通讯作者: Y.Kasukabe

Carbonizing Processes of Titanium Thin Films by Carbon-Implantation

钛薄膜渗碳碳化工艺

• 发表时间: 2005
• 期刊: e-J. Surf. Sci. Nanotech. 3
• 作者: 三枝進;初田亨ほか;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;粕壁善隆;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;Y.Kasukabe;S.Nishida
• 通讯作者: S.Nishida