Development of insulator film for penetrating electrodes of layered system LSIs for the next generation

开发下一代层叠系统LSI的穿透电极用绝缘膜

基本信息

批准号：
17560288
负责人：
YOKOTANI Atsushi
金额：
$ 2.37万
依托单位：
University of Miyazaki
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

项目摘要

We have developed a fabrication technique of insulators for penetrating electrodes of layered system LSIs for the next generation. Such electrodes are planed to be inserted in the Via hole of the substrate. Typical dimension of the hole is approximately several micrometers in diameter and tens micrometers in depth, which are much larger than the conventional LSI patterns. So, new technique has to be developed for fabrication on such a structure.In this work, first, we tried to develop a insulator film into the inside surface of the hole by using a photo-chemical vapor deposition with vacuum ultraviolet light. Silicon substrates which has a similar structures as the Via hole were used. Silica films were formed on the substrates with various deposition conditions. As a result, it was found that silica insulator film had been successfully formed on the inside surface of the hole. The film had almost uniform thickness. Next, we have tried to extend this technique for non-vaporizing liquid raw materials. Generally, it is very difficult to use a liquid materials for film deposition because the residual raw material is hardly removed from the deep part of the film through the thick liquid layer. We solved this problem by making very fine particle of the raw material. Dissolving the liquid material (silicone oil) into a solvent (butanol) and using a spray atomizer, very fine particle of approximately hundreds nanometers in diameter were successfully obtained. We confirmed that only a trace amount of raw material was remained in the film after the vacuum ultraviolet irradiation. However, the film was hardly formed onto the inside surface because it was difficult to diffuse into the dense air anbient in the hole. It is considered that the evacuation during the deposition should be effective to obtain the good filling properties.

我们开发了用于下一代分层系统LSI的穿透电极的绝缘体制造技术。这些电极被规划为插入基板的通孔中。孔的典型尺寸约为直径几微米、深度几十微米，比传统的LSI图案大得多。因此，必须开发新的技术来制造这种结构。在这项工作中，首先，我们尝试使用真空紫外光光化学气相沉积在孔的内表面上形成绝缘膜。使用具有与通孔类似结构的硅基板。在不同的沉积条件下在基底上形成二氧化硅膜。结果发现，在孔的内表面上成功地形成了二氧化硅绝缘体膜。该膜具有几乎均匀的厚度。接下来，我们尝试将这项技术扩展到非蒸发液体原材料。一般来说，使用液体材料进行薄膜沉积是非常困难的，因为残留的原料很难通过厚厚的液体层从薄膜的深处去除。我们通过将原材料制成非常细的颗粒来解决这个问题。将液体材料（硅油）溶解在溶剂（丁醇）中，并使用喷雾器，成功获得直径约数百纳米的极细颗粒。我们确认真空紫外线照射后薄膜中仅残留微量原料。然而，薄膜很难在内表面上形成，因为它很难扩散到孔内的稠密空气中。人们认为沉积过程中的抽真空应该有效以获得良好的填充性能。