Development of insulator film for penetrating electrodes of layered system LSIs for the next generation

开发下一代层叠系统LSI的穿透电极用绝缘膜

基本信息

批准号：
17560288
负责人：
YOKOTANI Atsushi
金额：
$ 2.37万
依托单位：
University of Miyazaki
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

项目摘要

We have developed a fabrication technique of insulators for penetrating electrodes of layered system LSIs for the next generation. Such electrodes are planed to be inserted in the Via hole of the substrate. Typical dimension of the hole is approximately several micrometers in diameter and tens micrometers in depth, which are much larger than the conventional LSI patterns. So, new technique has to be developed for fabrication on such a structure.In this work, first, we tried to develop a insulator film into the inside surface of the hole by using a photo-chemical vapor deposition with vacuum ultraviolet light. Silicon substrates which has a similar structures as the Via hole were used. Silica films were formed on the substrates with various deposition conditions. As a result, it was found that silica insulator film had been successfully formed on the inside surface of the hole. The film had almost uniform thickness. Next, we have tried to extend this technique for non-vaporizing liquid raw materials. Generally, it is very difficult to use a liquid materials for film deposition because the residual raw material is hardly removed from the deep part of the film through the thick liquid layer. We solved this problem by making very fine particle of the raw material. Dissolving the liquid material (silicone oil) into a solvent (butanol) and using a spray atomizer, very fine particle of approximately hundreds nanometers in diameter were successfully obtained. We confirmed that only a trace amount of raw material was remained in the film after the vacuum ultraviolet irradiation. However, the film was hardly formed onto the inside surface because it was difficult to diffuse into the dense air anbient in the hole. It is considered that the evacuation during the deposition should be effective to obtain the good filling properties.

我们已经开发了一种用于下一代LSIS渗透电极的绝缘体制造技术。该电极计划插入基板的通过孔中。孔的典型尺寸大约是直径大约几微米，并且深度为数十个微米，它们比常规的LSI模式大得多。因此，必须开发新技术以在这种结构上进行制造。在这项工作中，首先，我们尝试通过使用真空紫外线的光化学蒸气沉积来将绝缘膜开发到孔的内表面。使用与VIA孔相似的结构的硅基板。在具有各种沉积条件的底物上形成二氧化硅膜。结果，发现二氧化硅绝缘膜已成功地在孔的内表面形成。这部电影的厚度几乎均匀。接下来，我们试图将此技术扩展到非蒸发液体原材料。通常，很难将液体材料用于薄膜沉积，因为几乎没有从膜的深层从厚的液体层中除去残留的原材料。我们通过制作原材料的非常细的粒子来解决这个问题。将液体材料（硅油）溶解到溶剂（丁醇）中，并使用喷雾雾化器成功获得了大约数百纳米的非常细的颗粒。我们证实，在真空紫外线照射后，膜中只保留了痕量的原材料。但是，该膜几乎没有在内表面上形成，因为它很难扩散到孔中的稠密空气中。据认为，沉积期间的疏散应有效地获得良好的填充性能。