Semi-Automatic Probe System

半自动探针系统

• 批准号: 467419131
• 金额: --
• 依托单位: Rheinisch-Westfälische Technische Hochschule Aachen
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2021
• 资助国家: 德国
• 起止时间: 2020-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/467419131?language=en
• 关键词: Semi; Automatic; Probe; System; Semi; Automatic; Probe; System

Novel devices in the more-Moore and beyond-CMOS domain suffer significant electrical parameter variation. Furthermore, aging effects during lifetime can increase the occurrence and even propagate silent or latent faults. Designing proper strategies for testing ICs after manufacturing as well as in field is considered essential. In order to propose efficient test strategies, detailed characterization of various ICs have to be performed over a large number of Circuits-Under-Test (CUT) to capture relevant statistical data. Such characterization requires a tightly controlled and wide range of operating parameters, such as voltage and temperature. For this effort bare silicon samples shall be automatically characterized in a probe system. Based on device models resulting from the characterization data, manufacturing test strategies shall be proposed and realized in silicon. Such strategies should be suitable of commercial manufacturing as well as in-field testing. The detection capability of test procedures shall be evaluated again in a controlled environment across the full range of parameters. Besides good control and capability of screening a statistical relevant number of CUT, the commercial probe system provides a setup comparable to commercial chip testing, i.e. it allows assessment of the full test procedure.To support this research, a semi-automatic probe system is applied for. As parametric characterization and test is the prime focus, a wide range of forced temperatures is compulsory. For this purpose, dedicated air-drying equipment is required as the local facilities don’t provide pressurized air suitable for low temperatures. Additional important features are the capability to handle typical full-scale 300mm wafers as well as smaller samples. The latter result from postprocessing in local facilities of the RWTH Aachen and the research center Jülich. We will receive such samples from adjoint research groups for our characterization and evaluation efforts. Together with the prober, a device parameter analyzer is necessary for characterization of individual device properties. It also provides precise control of voltages including measurement of injected currents. Furthermore, microprobes for contacting the devices are required.

莫尔和超越流体结构域中的新型设备具有显着的电参数变化。此外，生命周期内的衰老效应会增加发生的情况，甚至可以传播无声或潜在的断层。设计适当的策略来测试制造业和现场的ICS是必不可少的。为了提出有效的测试策略，必须对大量的电路（剪切）进行各种IC的详细表征，以捕获相关的统计数据。这种表征需要严格控制和广泛的工作参数，例如电压和温度。为此，应在探针系统中自动表征裸硅样品。根据特征数据产生的设备模型，应在硅中提出制造测试策略。此类策略应适用于商业制造以及现场测试。测试程序的检测能力应在整个参数范围内的受控环境中再次评估。除了良好的控制和筛选统计相关数量的削减数量的能力外，商业探针系统还提供了与商业芯片测试相当的设置，即，它允许评估完整的测试程序。为了支持这项研究，应用了半自动探针系统。由于参数表征和测试是主要焦点，因此强制性温度是强制性的。为此，需要专用的空气干燥设备，因为当地设施不提供适合低温的加压空气。其他重要特征是能够处理典型的全尺寸300mm波以及较小的样品。后者是由于在亚兴（Rwth Aachen）和尤里奇（Jülich）研究中心的当地设施中进行的后处理而产生的。我们将从伴随研究小组中收到此类样本，以进行表征和评估工作。与探针一起，设备参数分析仪对于表征单个设备属性是必需的。它还可以精确控制电压，包括测量注射电流。此外，需要接触设备的微探测。