Containerless Process for the Spherical Single Crystal Semiconductor Silicon by the Gas Jet Flow Type Electromagnetic Levitation.

气体射流式电磁悬浮球形单晶半导体硅的无容器工艺。

基本信息

批准号：
15560646
负责人：
NAGAYAMA Katsuhisa
金额：
$ 1.92万
依托单位：
Shibaura Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2006
项目状态：
已结题

项目摘要

I researched and discussed the fabrication for the spherical single crystal semiconductor Si by using the gas jet flow type electromagnetic levitating process which is one of the containerless process. As with space, this levitating process can solidify metals and semiconductor without convection and container at ground level. Also, this process is new process which enables the high cooling rate and can detects the nucleation from undercooled Si melt. Furthermore, in view of the interaction between Si and high-frequency magnetic field, the sample for electromagnetic levitation is used the surface of high pure(99.999%) Si coated C or B by a high vaccum deposition apparatus. According to the results, this process enabels the containerless solidification for the B or C coated Si. Thereby, the validity of the new electromagnetic levitating process for B or C coated Si is clarified. Also, the undercooling ΔT is 150 K and 200 K for C or B coated Si, respectively. The cooling rate from the cooling start to the detection limit for pyrometer is 110 K/s and 300 K/s for C or B coated Si, respectively. Although crystal growth mode at lower undercoolings of C coated Si samples is faceted growth on the surface, the crystal growth mode of surface Si at higher undercoolings of samples is dendrite grown on the surface. Also, I obtained the a quantitative results about the relation between deposition time and solidification with undercooling of Si sample. From XRD measurements and SEM observation, the Si grain refinement with increasing the undercooling existed and the preferential growth orientation changes with increasing undercooling. As the results, I obtained the high validity of this process and the quantitative data.

我研究并讨论了球形单晶半导体SI的制造，使用气流流量类型电磁升华过程，这是无容器过程之一。与空间一样，这种悬浮过程可以固化金属和半导体，而无需在地面上结构和容器。同样，此过程是新的过程，可以使高冷却速率高冷却速率，并可以检测到底层过冷的SI熔体中的成核。此外，鉴于Si和高频磁场之间的相互作用，使用高纯纯度（99.999％）SI涂层C或B的表面通过高真空沉积设备，使用了电磁悬浮的样品。根据结果，此过程吸引了B或C涂层Si的无容器固化。因此，阐明了B或C涂层SI的新电磁启发过程的有效性。同样，对于C或B涂层的Si，过冷的ΔT分别为150 K和200 K。高温计的冷却速率分别为110 k/s和300 k/s的C或B涂层Si。尽管C涂层Si样品的较低过冷的晶体生长模式在表面上是面积的生长，但在较高的样品的较高底层底层的表面Si的晶体生长模式是在表面上生长的。另外，我获得了关于沉积时间与固化之间关系与SI样品过冷的关系之间关系的定量结果。从XRD测量和SEM观察中，随着底层的底层的增加，SI晶粒的细化存在，并且随着底冷的增加而首选的生长取向变化。结果，我获得了此过程的高有效性和定量数据。