Research of current fluctuations of nanoscaled MOSFETs based upon quantum transport models

基于量子输运模型的纳米MOSFET电流涨落研究

• 批准号: 15560296
• 负责人: MIYOSHI Tanroku
• 金额: $ 2.24万
• 依托单位: Kobe University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560296/
• 关键词: Current Fluctuations; Quantum Transport; Monte Carlo Simulatiom; Nonequilibrium Green's Function; Nanoscale MOSFET; Shot Noise; ショット雑音; 非平衡グリーン関数; ダブルゲートMOSGET; 電流揺らぎ; Current Fluctuations; Quantum Transport; Monte Carlo Simulatiom; Nonequilibrium Green's Function; Nanoscale MOSFET; Shot Noise; ショット雑音; 非平衡グリーン関数; ダブルゲートMOSGET; 電流揺らぎ

In this research project, we have studied the current noise characteristics of nano-scale MOS devices by employing the quantum transport models based upon the nonequilibrium Green's function model (NEGF) and the quantum corrected Monte Carlo (MC) device simulation.1.Quantum corrected Monte Carlo modelThe quantum corrected MC model has been developed to simulate practical semiconductor devices at normal temperatures, and applied to the study of the current fluctuations of a nano-scale Si-MOSFET. The quantum mechanical effects are incorporated in terms of a quantum correction of potential in this particle model. The ellipsoidal multi-valleys of silicon conduction band are also considered in the transport simulation, which is very important in the practical simulation of nano-scaled devices. We have found that the decrease in the number of channel electrons in nano-scale MOSFETs lead to large temporal fluctuations in the electronic current. When the channel length of the devices becomes s … More horter in nano-scale, the transit time of electrons becomes shorter, and the scattering time of electrons also becomes shorter due to the increase of the average energy of electrons, which makes the autocorrelation time of the drain current shorter and consequenrly temporal fluctuations larger.2.Nonequilibrium Green's function modelThe NEGF is used to study the shot noise suppression caused by the quantum mechanical correlations of electrons in semiconductor nano-scale devices, so that the current noise is discussed at low temperature. It was considered interesting to apply the NEGF models to the study of shot noise in ballistic nano-scale Si-MOSFETs, where correlations of electrons are expected to exist when the three dimensional electrons in the electrodes are injected into the inversion layer and confined to quantized subbands as the so-called two-dimentional electron gases. Quantization in the inversion layer and phase coherent transport were anticipated to influence noise performance in ballistic nanoscale Si-MOSFETs. However, up to now, we have not yet observed the shot noise suppression in the simulation of nanoscale MOSFETs. Less

在该研究项目中，我们通过采用基于非平衡绿色功能模型（NEGF）和量子校正的蒙特卡洛（MC）Carlo（MC）设备模拟的量子传输模型来研究纳米级MOS设备的当前噪声特性。纳米级Si-Mosfet。量子机械效应是根据该粒子模型中电势的量子校正来纳入的。在传输模拟中还考虑了硅传导带的椭圆形多阀，这在纳米尺度设备的实际模拟中非常重要。我们发现，纳米级MOSFET中通道电子数量的减少导致电子电流的临时波动很大。当设备的通道长度变为s…在纳米尺度上更多的马时，电子的运输时间变短，并且由于电子平均能量的增加，电子的散射时间也变短，因此电子的自相关时间更短，导致量的Quientrible Indectional distribility proction the negquilibil greenf innegibib greenf innegiblibile greenf innegiblibile greenf。半导体纳米级设备中的电子，以便在低温下讨论当前噪声。将NEGF模型应用于弹道纳米尺度Si-MoSFET中的射击噪声的研究被认为是有趣的，当电子中的三维电子被注入反演层并将其限于量化的子带作为所谓的两维电子气体时，预计电子的相关性将存在。预计反转层和相干运输中的量化会影响弹道纳米级SI-MOSFET中的噪声性能。但是，到目前为止，我们尚未观察到纳米级MOSFET的模拟中的射击噪声抑制。