Development of vacuum-ultraviolet photo-induced cleaning device by use of a rare-gas excimer lamp

稀有气体准分子灯真空紫外光致清洗装置的研制

基本信息

批准号：
13555202
负责人：
KUBODERA Shoichi
金额：
$ 7.49万
依托单位：
University of Miyazaki
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555202/
关键词：
Rare gas excimers Vacuum ultraviolet Photo-chemical process Photo-induced cleaning Optical field induced ionization Vacuum ultraviolet lamp Coherent vacuum ultraviolet emission Surface alteration 光化学反応エキシマランプ表面反応ドライプロセス光還元

项目摘要

Main objective of this research was the development of a photo-induced cleaning device by use of a vacuum ultraviolet (VUV) rare gas excimer lamp. I have made the following accomplishments during last three-year research term.[1]Development of high-power raregas excimer lamps : This is a heart of present research. By optimizing the electrode configuration and power supply of a rare gas excimer lamp device, I have obtained an output power density of more than 1 mW/cm^2 126 nm, which is a champion data at such a short wavelength emission source. I was also successful to simplify vacuum handling system for the device.[2]Super dry, process : By use of the device developed in [1], I was successful to make a photo-induced etching of an oxidized layer on a silicon wafer without using any reactive gases. This device was also useful to make photo-induced cleaning of metal-coated. optics and surface alteration of various polymers.[3]VUV F2 lamp : In addition to the Ar2* excimer lamp at 126 nm, I … More have studied an F2 lamp at 157 nm. In spite of reactive nature of the F2, stable long-term operation was made possible by optimizing gas handling and impurity analysis.[4]Dry process : To increase the etching process rate, I have used a reactive gas for the oxidized layer etching. By use of this gas, the rate increased more than one order of magnitude, which would give this method reality.[5]Development of coherent VIJY emission source : As described above, the photo-induced process by use of incoherent lamps is very effective, but inevitably slow. High-power VUV light source would increase the rate orders of magnitude. I have thus developed a high-power coherent 126 nm emission by use of electrons produced by optical field induced ionization process. I. observed a small-signal gain coefficient of 0.05/cm for the first time.[6]Production of a photo-induced cleaning device : Based on the above scientific and engineering knowledge, I have designed a compact photo-induced cleaning device. With a help of a venture company originated from University of Miyazaki (Nano Tech Photon Corp.), a design became a real device. Less

这项研究的主要目标是开发一种使用真空紫外（VUV）稀有气体准分子灯的光诱导清洁装置。在过去的三年研究期间，我取得了以下成果。[1]高光诱导清洁装置的开发。功率稀有气体准分子灯：这是目前研究的核心，通过优化稀有气体准分子灯装置的电极配置和电源，我获得了超过1 mW/cm^2 126的输出功率密度。 nm，这是如此短波长发射源的冠军数据，我还成功地简化了该设备的真空处理系统。[2]超干工艺：通过使用[1]中开发的设备，我成功了。在不使用任何反应气体的情况下对硅晶片上的氧化层进行光诱导蚀刻。该设备还可用于对金属涂层光学器件和各种聚合物的表面进行光诱导清洁。灯：除了126 nm 的 Ar2* 准分子灯，我研究了 157 nm 的 F2 灯，尽管 F2 具有反应性，但通过优化气体处理和杂质分析，可以实现稳定的长期运行。[4]干式。工艺：为了提高蚀刻工艺速率，我使用了一种反应气体进行氧化层蚀刻，通过使用这种气体，速率提高了一个数量级以上，这使得这种方法成为可能。 [5]相干VIJY发射源的开发：如上所述，使用非相干灯的光诱导过程非常有效，但不可避免地会缓慢地提高速率。由此开发了利用光场诱导电离过程产生的电子的高功率相干126 nm发射。首次观察到0.05/cm的小信号增益系数。[6]制作了光诱导清洁装置：基于上述科学和工程知识，我在宫崎大学的一家风险投资公司（Nano Tech Photon Corp.）的帮助下设计了一种紧凑的光诱导清洁装置，该设计成为了一个解决方案。真实设备较少。