Study of non-equilibrium thermochemical reaction between Si melt and silica glass at high temperature in Czochralski Si crystal growth

直拉硅晶体生长中高温硅熔体与石英玻璃非平衡热化学反应研究

基本信息

批准号：
13450010
负责人：
HOSHIKAWA Keigo
金额：
$ 8万
依托单位：
Faculty of Education, Shinshu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

项目摘要

In this study, the thermochemical reactions and the physical phenomena at high temperature during Czochralski (CZ) Si crystal growth have been investigated, and we noticed (a) transportation of impurity atoms in the melt and the crystal, and (b) the dislocation behavior near the interface between seed and the grown crystal. Typical results are as follows;(1) Oxygen dissolution rate from silica crucible to Si melt could be obtained precisely by sessile drop method. Ge atoms heavily doped in Si melt were evaporated with oxygen atoms dissolved from silica crucible and the evaporation rate increased with increasing Ge concentration in the melt(2) Segregation coefficient of Ge was investigated by comparing Ge concentrations in Si crystal and in corresponding Si melt, and it was about 0.48 with Ge concentration in the crystal in the range from 10^<19> to 10^<21> atoms/cm^3.(3) Dislocation due to thermal shock in heavily B-doped Si seed was investigated under different temperature conditions. The dislocation could be suppressed when B concentration in the seed was larger and temperature difference between the seed placed just above the melt surface and the melt on dipping was smaller.(4) Dislocation suppression mechanism due to lattice misfit near the interface between heavily B-doped Si seed and lightly B-doped Si grown crystal was investigated experimentally and computationally. B concentration near the interface was gradually changed and the distribution was formed by diffusion of B atoms from the heavily B-doped seed during the crystal growth.(5) Dislocations were generated in the grown crystal although the dislocations due to both thermal shock and lattice misfit were suppressed by using a heavily B and Ge codoped Si seed. Such dislocation was generated in the case of lower melt temperature, and we conclude that the dislocation was due to incomplete seeding.

在这项研究中，已经研究了在牙齿化学反应和高温下的物理现象（CZ）SI晶体生长期间的高温反应，我们注意到（a）熔体和晶体中杂质原子的转运，以及（b）种子和成年晶体之间界面附近的脱位行为。典型的结果如下：（1）从硅胶到Si熔体的氧溶解速率可以通过衬滴法来精确地获得。用氧原子溶解在硅胶坩埚中的氧原子中蒸发在Si熔体中的GE原子，并通过比较Si晶体中的GE浓度，并将其与10.48 <10^conderation <10 <19的范围进行比较，从而研究了GE的GE（2）GE脱离系数随着Ge的GE浓度的增加而增加。原子/cm^3。（3）在不同的温度条件下研究了由于热掺杂的Si种子而导致的脱位。当种子中的B浓度较大并且在熔体表面上方的种子之间的浓度较大时，可以抑制错位，并且浸入融化的熔体较小。（4）因晶格而导致的脱位机制置于晶格抑制机制附近，靠近B型B型SI种子之间的界面和易于b-Doped Si Grow的Si Grown crynal Crystal和计算的实验和计算。在晶体生长过程中，B原子从沉重的B掺杂种子扩散而形成界面附近的B浓度。（5）在生长的晶体中产生了位错，尽管通过使用重度B和Geoped B和Geoped Si Seed抑制了热休克和晶格失调引起的脱位。在较低的熔体温度的情况下，产生了这种错位，我们得出结论，脱位是由于播种不完全。