Photon spin charge texture in nano-semiconductor physics
纳米半导体物理中的光子自旋电荷织构
基本信息
- 批准号:11694095
- 负责人:
- 金额:$ 6.4万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B).
- 财政年份:1999
- 资助国家:日本
- 起止时间:1999 至 2000
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
1.Biexciton states realized in diluted magnetic semiconductor quantum structures have been investigated under high magnetic field. The destabilization of a singlet biexciton has been observed for the first time under extremely high magnetic field effectively induced by the exchange interaction through the diluted magnetic barrier, whereas a spin triplet biexciton increases its stability. A diffusion Monte-Carlo simulation taking monolayer fluctuation at the interface into account has been performed to evaluate the binding energies of the biexciton, which agreed well with the observation.2.The exciton localization mechanisms in the dilute magnetic semiconductor quantum structure have been studied both magneto-photoluminescence measurements and theoretical magnetic polaron model. It has been clarified that an exciton bifurcation takes place caused by the polaron effect.3.Enormous Zeeman shifts in diluted magnetic quantum wells have been observed by the magneto-luminescence study under high pressure and extremely high magnetic field. The results have been well accounted for by the interface δ-potential model. We have henceforth proposed the method of extracting monolayer magnetism at the hetero-interface in the dilute magnetic semiconductor hetero structures.4.We could observe spin polarized charged excitons in high density two-dimensional electron gas system realized in the diluted magnetic quantum wells. Our analysis of the magneto-absorption and photo-luminescence measurements has led our comprehension of the creation and recombination mechanisms of the spin polarized charged excitons at such high electron density regime.
1.在高磁场下研究了在稀释的磁性半导体量子结构中实现的Biexciton状态。通过稀释的磁性屏障的交换相互作用有效诱导了极高的磁场,单个Biexciton的不稳定是第一次观察到,而自旋三重态Biexciton则提高了其稳定性。 A diffusion Monte-Carlo simulation taking monolayer fluctuation at the interface into account has been performed to evaluate the binding energies of the biexciton, which agreed well with the observation.2.The exciting localization mechanisms in the dilute magnetic semiconductor quantum structure have been studiod both magneto-photolumenscence measurements and theoretical magnetic polaron model.已经澄清的是,由极化效应引起的令人兴奋的分叉。3。在高压和极高磁场下的磁发光研究已经观察到稀释的磁量子孔中的巨大Zeeman偏移。接口δ电位模型对结果很好地解释了结果。此后,我们提出了一种在稀释磁性半导体异质结构中提取单层磁力的方法。4。我们可以观察到在稀释的磁量子孔中实现的高密度二维电子气体系统中的自旋偏振电荷激素。我们对磁通吸收和光亮度测量的分析使我们对如此高的电子密度状态下自旋偏振电荷激子的创造和重组机制的理解。
项目成果
期刊论文数量(285)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
R.Akimoto, F.Sasaki, S.Kobayashi, K.Ando, G.Karczewski, T.Wojtowicz, and J.Kossut: "Excitonic coherent gain induced by giant seeman splitting in Cd_<1-x>Mn_xTe quantum wells"J.Cryst.Growth. 214/215. 415 (2000)
R.Akimoto、F.Sasaki、S.Kobayashi、K.Ando、G.Karczewski、T.Wojtowicz 和 J.Kossut:“Cd_<1-x>Mn_xTe 量子阱中巨型西曼分裂引起的激子相干增益”J
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V.Scherbakov, A.V.Akimov, D.R.Yakovlev, W.Ossau, G.landwehr, T.Wojtowicz, G.Karczewski, and J.Kossut: "Spin-lattice relaxation in semimagnetic CdMnTe/CdMgTe quantum wells"Phys.Rev.B. 62. R10 641 (2000)
V.Scherbakov、A.V.Akimov、D.R.Yakovlev、W.Ossau、G.landwehr、T.Wojtowicz、G.Karczewski 和 J.Kossut:“半磁性 CdMnTe/CdMgTe 量子阱中的自旋晶格弛豫”Phys.Rev.B。
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D.R Yakovlev, U.Zehnder, W.Ossau, A.Waag, G.Landwehr, T.Wojtowicz, G.Karczewski, and J.Kossut: "Optical study of spin glass-like transition in epilayers and quantum well structures containing Cd_<1-x>Mn_xTe"J.Magnetism and Magn.Mater.. 191. 25 (1999)
D.R Yakovlev、U.Zehnder、W.Ossau、A.Waag、G.Landwehr、T.Wojtowicz、G.Karczewski 和 J.Kossut:“外延层和含有 Cd_ 的量子阱结构中自旋玻璃样转变的光学研究<
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A.V.Scherbakov, A.V.Akimov, D.R.Yakovlev, W.Ossau, G.Landwehr, T.Wojtowicz, G.Karczewski, and J.Kossut: "Detection of nonequilibrium phonos by the exciton luminescence in CdMnTe-based quantum wells"Physica B. 263-264. 501 (1999)
A.V.Scherbakov、A.V.Akimov、D.R.Yakovlev、W.Ossau、G.Landwehr、T.Wojtowicz、G.Karczewski 和 J.Kossut:“基于 CdMnTe 的量子阱中激子发光检测非平衡声子”Physica B.263
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- 影响因子:0
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T.Nakayama,M.Murayama: "Optical Response Spectra Calculation of Wide-gap ZnSe Surfaces"Jpn.J.Appl.Phys. 39. 4523-4524 (2000)
T.Nakayama,M.Murayama:“宽带隙 ZnSe 表面的光学响应光谱计算”Jpn.J.Appl.Phys。
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TAKEYAMA Shojiro其他文献
TAKEYAMA Shojiro的其他文献
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{{ truncateString('TAKEYAMA Shojiro', 18)}}的其他基金
Optical Properties of Spin Controlled Semiconductor Nanostructures
自旋控制半导体纳米结构的光学性质
- 批准号:
09244106 - 财政年份:1997
- 资助金额:
$ 6.4万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Thin-Film Single-Crystal Growth of Layered Materials and Fabrication of The Layered Superlattices by a Hot Wall Technique, and Their Optical Properties
层状材料的薄膜单晶生长和热壁技术制备层状超晶格及其光学性能
- 批准号:
62460025 - 财政年份:1987
- 资助金额:
$ 6.4万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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