RESEARCH AND DEVELOPMENT OF LEAD-FREE PIEZOELECTRIC CERAMIC MATERIALS

无铅压电陶瓷材料的研发

• 批准号: 11555168
• 负责人: TAKENAKA Tadashi
• 金额: $ 8.83万
• 依托单位: FACULTY OF SCIENCE AND TECHNOLOGY, SCIENCE UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555168/
• 关键词: PIEZOELECTRICS; ELECTROMECHANICAL COUPLING FACTOR; LEAD-FREE PIEZOELECTRICS; FERROELECTRICS; BISMUTH PEROVSKITES; BISMUTH LAYER-STRUCTURED FERROELECTRICS; 電気機械結合係数; ビスマス層状構造強誘電体; ペロブスカイト化合物

Recently, lead-free piezoelectric materials have been attracting attention as new materials in place of PZT materials for environments. Among of many lead-free piezoelectric materials, bismuth sodium titanate, (Bi_<1/2>Na_<1/2>)TiO_3 [BNT]-based and bismuth layer-structured ferroelectric ceramics will be a superior candidate. Bismuth layer-structured ferroelectrics (BLSF) are characterized by their low dielectric constant ε s, high Curie temperature, T c, and large anisotropy in electromechanical coupling factors k t/k p or k33/k31.In this research, Sr_<m-3+x>Bi_<4-x>Ti_<m-x>Ta_xO_<3m+3> (m=2, x=1〜2 ; m=3, x=0〜2) [SBTTm (x)] ceramics are studied on their ferroelectric and piezoelectric properties which are applied to lead-free piezoelectric devices. The SBTT3 (0.3) ceramic shows the strong ferroelectricity and high piezoelectricity. From the measurement of D-E hysteresis, the remanent polartzation, P r of SBTT3 (0. 3) was the largest (P r=12.3 μC/cm^2) in the SBTT3 (x) system and coercive field, E c of SBTT2 becomes larger with decreasing the amount of Ta concentration (x). The electromechanical coupling factor, k33 and piezoelectric constant, d33 of the grain oriented SBTT3 (0.3) ceramic were relatively high of k33=0.37 and d33=45.3 pC/N, respectively. The mechanical quality factor, Q m, of the SBTT2 (1.5) ceramic was very high of more than 8000. The SBTT ceramics seem to be a superior candidate for lead-free piezoelectric resonator or high temperature piezoelectric sensor materials.

近年来，无铅压电材料作为替代PZT材料用于环境的新材料而受到关注，在众多无铅压电材料中，钛酸铋钠(Bi_<1/2>Na_<1/2>)TiO_3。 [BNT] 基铋层状结构铁电陶瓷将成为最佳候选材料。铋层状结构铁电体 (BLSF) 的特点是其低功耗。介电常数εs，居里温度高，Tc高，机电耦合系数kt/kp或k33/k31各向异性大。在本研究中，Sr_<m-3+x>Bi_<4-x>Ti_<m-x>Ta_xO_ <3m+3> (m=2, x=1〜2 ; m=3, x=0〜2) [SBTTm (x)]陶瓷的研究应用于无铅压电器件的SBTT3(0.3)陶瓷表现出强铁电性和高压电性。从D-E磁滞的测量来看，SBTT3(0.3)的剩余极化P r 是。 SBTT3 (x) 系统和矫顽力场中最大 (P r=12.3 μC/cm^2)，E c 为随着Ta浓度(x)的减少，SBTT2变得更大。晶粒取向SBTT3(0.3)陶瓷的机电耦合因子k33和压电常数d33分别相对较高，k33=0.37和d33=45.3pC/N。 SBTT2 (1.5) 陶瓷的机械品质因数 Q m 非常高，超过 8000。SBTT陶瓷似乎是无铅压电谐振器或高温压电传感器材料的最佳候选者。

项目成果

T.Takenaka and H.Nagata: "Ferroelectric and Piezoelectric Properties of Lead-Free(Bi_<1/2>Na_<1/2>)TiO_3-KNbO_3-1/2(Bi_2O_3・Sc_2O_3)Ceramics"Proc.the 11th IEEE International Symposium on the Applications of Ferroelectrics(ISAF XI '98)(IEEE Catalog No.98CH

T.Takenaka 和 H.Nagata：“无铅(Bi_<1/2>Na_<1/2>)TiO_3-KNbO_3-1/2(Bi_2O_3・Sc_2O_3)陶瓷的铁电和压电性能”Proc.the 11th IEEE国际铁电体应用研讨会(ISAF XI 98)(IEEE Catalog No.98CH)

H.Nagata,T.Takahashi and T.Takenaka: "Piezoelectric Anisotropies of Bismuth Layer-Structured Ferroelectrics"Transactions of the Materials Research Society of Japan. 25[1]. 273-276 (2000)

H.Nagata、T.Takahashi 和 T.Takenaka：“铋层结构铁电体的压电各向异性”日本材料研究学会会刊。

T.Takanaka: "Piezoelectric Properties of Some Lead-Free Ferroelectric Ceramics"Ferroelectrics. 230. 87-98 (1999)

T.Takanaka：“一些无铅铁电陶瓷的压电特性”铁电体。

H.Nagata,N.Koizumi,N.Kuroda,I.Igarashi and T.Takenaka: "Lead-Free Piezoelectric Ceramics of(Bi_<1/2>Na_<1/2>)TiO_3-BaTiO_3-BiFeO_33 System"Ferroelectrics. 229. 273-278 (1999)

H.Nagata、N.Koizumi、N.Kuroda、I.Igarashi 和 T.Takenaka：“(Bi_<1/2>Na_<1/2>)TiO_3-BaTiO_3-BiFeO_33 系无铅压电陶瓷”铁电体。

H.Nagata N.Chikushi and T.Takenaka: "Ferroelectric Properties of Bismuth Layer-Structured Compound Sr_xBi_<4-x>Ti_<3-x>Ta_xO_<12> (0 【less than or equal】 x 【less than or equal】 2)"Jpn.J.Appl.Phys. 38 Part 1, No.9B. 5497-5499 (1999)

H.Nagata N.Chikushi 和 T.Takenaka：“铋层状结构化合物 Sr_xBi_<4-x>Ti_<3-x>Ta_xO_<12> 的铁电性能（0 [小于或等于] x [小于或等于] 2)“Jpn.J.Appl.Phys.38 第 1 部分，No.9B.5497-5499 (1999)