ORGANIC LIGHT EMITTING TRANSISTORS FOR FLEXIBLE DISPLAYS

用于柔性显示器的有机发光晶体管

• 批准号: 14390012
• 负责人: KUDO Kazuhiro
• 金额: $ 6.53万
• 依托单位: CHIBA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-14390012/
• 关键词: Organic Light Emitting Transistor; Static Induction Transistor; Flexible displays; Organic Semiconductors; Vertical Transistors; Organic Electro-luminescence; Schottky Gate; Photo-thyristor; 真空蒸着膜; Organic Light Emitting Transistor; Static Induction Transistor; Flexible displays; Organic Semiconductors; Vertical Transistors; Organic Electro-luminescence; Schottky Gate; Photo-thyristor; 真空蒸着膜

Organic light emitting transistors(OLET) which are vertically combined with the organic static induction transistor(OSIT) and organic light emitting diode(OLED) are fabricated and the device characteristics are investigated. OSIT using copper phthalocyanine(Pc) and α-NPD with grid-type Al gate electrodes showed basic SIT characteristics and relatively high-current density and high-speed operation. It is found that the characteristics of OSIT are strongly affected by the controllability of the grid-type Al gate electrode. In order to realize the flexible electronic circuits and displays, we have fabricated OSIT on plastic substrates using pentacene film and Al gate electrode. The OSIT febricated on plastic substrate show almost same characteristics comparing with those of non-flexible OSIT on glass substrate. The OLET is a suitable element for flexible sheet display's. High luminance modulations by low gate voltage were observed in the OLET by optimizing the gate electrode and layer thickness. The relatively high on/off ratio and operational speed of approximately 100 and 300 Hz are obtained. These results demonstrate that the OLET examined here is expected for the application to display devices. Furthermore, we have investigated the basic properties of photo-thyristor devices and the possibility of self-holding-type devices was examined.

有机光发射晶体管（OLET）与有机静态感应晶体管（OSIT）和有机光二极管（OLED）结合，研究了设备特性。使用带有网格类型的栅极电极的OSIT使用铜邻苯二甲酸（PC）和α-NPD显示了基本的SIT特性以及相对高电流密度和高速操作。发现OSIT的特性受网格型AL栅极电极的可控性的强烈影响。为了实现柔性电子电路和显示器，我们使用五苯膜和Al栅极电极在塑料基板上制造了OSIT。与玻璃基板上的非燃烧OSIT相比，在塑料底物上发挥的OSIT显示几乎相同的特性。 OLET是适合灵活板显示屏的合适元素。通过优化栅极电极和层厚度，在OLET中观察到低栅极电压的高亮度调制。获得了大约100和300 Hz的相对较高/关闭率和运行速度。这些结果表明，此处检查的OLET可以显示设备。此外，我们已经研究了光thystristor设备的基本特性，并检查了自holding型设备的可能性。