Development of GaN superjunction devices with pGaN ArF laser activation for high power application

开发用于高功率应用的具有 pGaN ArF 激光激活的 GaN 超结器件

基本信息

批准号：
22K20438
负责人：
VILLAMIN MARIAEMMA
金额：
$ 1.83万
依托单位：
Toyota Technological Institute
依托单位国家：
日本
项目类别：
Grant-in-Aid for Research Activity Start-up
财政年份：
2022
资助国家：
日本
起止时间：
2022-08-31 至 2024-03-31
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-22K20438/
关键词：
GaN Laser activation excimer laser ArF excimer laser Laser annealing GaN superjunction

项目摘要

Main goal of the study is to realize Gallium nitride superjunction (GaN SJ) power device with p-GaN layer activated using an ArF laser. This will be an original proof of concept for this fabrication method. GaN SJ device is a candidate for next generation power devices. However, fabrication of SJ structure is very difficult, due to the alternating p- and n- layers needed. Although this can be achieved by selective ion implantation, a more elegant approach is to use selective excimer laser annealing, which can define the p-region (p-GaN) by laser irradiation. Research implementation plan includes three phases. Phase 1 includes optimization of the Mg-activation using ArF laser. Phase 2 includes feedback of optimized laser parameters to further tune the next batch of GaN wafer properties, and purchase the designed photomask for SJ device fabrication. And phase 3 includes the used of the optimized wafer and laser parameters to demonstrate actual SJ power device and characterization. Few months after we received Kakenhi Startup, initial results of ArF laser annealing of pGaN is presented during the JSAP spring conference 2023. The effectiveness of ArF laser annealing in the activation of Mg-doped GaN using cloverleaf mesa structure is investigated. Using hall measurement, laser irradiated pGaN showed that the resistivity increases as laser power is increased, implying that the laser power may have damage the surface. ArF laser annealing method using cloverleaf mesa structure is first successfully demonstrated. Further investigation needed to confirm pGaN activation.

该研究的主要目标是实现使用ARF激光激活的p-gan层的氮化壳超连接（GAN SJ）动力设备。这将是这种制造方法的原始概念证明。 GAN SJ设备是下一代电源设备的候选人。但是，由于所需的P层和N层，SJ结构的制造非常困难。尽管这可以通过选择性离子植入来实现，但一种更优雅的方法是使用选择性的准分子激光退火，可以通过激光照射来定义P区域（P-GAN）。研究实施计划包括三个阶段。阶段1包括使用ARF激光对MG激活进行优化。第2阶段包括优化激光参数的反馈，以进一步调整下一批GAN晶圆属性，并购买设计用于SJ设备制造的照片。阶段3包括优化的晶圆和激光参数的使用，以演示实际的SJ动力设备和表征。我们收到Kakenhi创业公司几个月后，在2023年JSAP春季会议期间提出了ARF激光退火的初始结果。使用Clofoverleaf Mesa结构研究了ARF激光退火在激活MG掺杂GAN方面的有效性。使用HALL测量，激光照射的PGAN表明，随着激光功率的增加，电阻率会增加，这意味着激光功率可能会损坏表面。首先成功证明了使用叶绿叶梅萨结构的ARF激光退火方法。需要进一步研究以确认PGAN激活。