Comparison of dislocation behaviors between FCC metals and C60 crystals.

FCC 金属和 C60 晶体之间的位错行为比较。

• 批准号: 06650733
• 负责人: KOJIMA Kenichi
• 金额: $ 1.28万
• 依托单位: Yokohama City University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650733/
• 关键词: Dislocations in C60; Fullerene crystals; Crystal defects; C_<60>結晶; 転位; 硬さ

We investigated the characteristics of dislocations of C60 and C70 crystals.(1)Crystal growth and perfection.C60 and C70 crystals were grown from vapor method. The grown-in dislocation density was the order of 10^<3-4> cm^<-2> in C60 crystals. Slip dislocations were introduced from the edges of the crystal. The Burgers vectors of those dislocations were determined as b=1/ [110] by using X-ray topographs.(2) Slip systems in C60 crystals.Slip systems were observed to be a {111} <110> using an etch-pit method in the temperature range than 240K to 450K.This slip system was the same as that of FCC metals.(3) Interaction between dislocations and light.The temperature dependence of micro-hardness showed the anomalous behavior, that was that the hardness had a maximum at 400K.We explained that this was due to photo-induced products which were produced by light.(4) conclusionSlip systems were strongly depended on the crystal structures. However, physical properties of dislocations were due to characteristics of the molecules and the bondings.

我们研究了C60和C70晶体位错的特征。（1）晶体生长和完美。C60和C70晶体是通过蒸气方法生长的。在C60晶体中，生长的位错密度是10^<3-4> cm^<-2>的阶。滑移位错是从晶体边缘引入的。通过使用X射线地形图确定这些位错的汉堡矢量为B = 1/ [110]。（2）C60晶体中的滑动系统。显示顺式系统是{111} <110>使用在温度范围内的蚀刻范围的方法{111} <110>与240k至450k的温度范围内的蚀刻方法相同。微硬度显示出异常的行为，那就是硬度在40万时的最大值。我们解释说，这是由于光诱导的产物引起的。（4）结论lip系统强烈依赖于晶体结构。但是，位错的物理特性是由于分子的特征和键。

项目成果

M.Tachibana: "Growth and mechanical of properties of C60 single crystals." Trans.Mat.Res.Soc.Jpn.14B. 1273-1276 (1994)

M.Tachibana：“C60 单晶的生长和机械性能。”

K.Kojima, M.Tachibana, Y.Maekawa, H.Sakuma, M.Michyama, K.Kikuchi and Y.Achiba: "Growth, Perfection and Defects in C60 and C70 Single Crystals." Proc.3rd Intern. Workshop on Crystal Growth of Organic Materials. (in press).

K.Kojima、M.Tachibana、Y.Maekawa、H.Sakuma、M.Michyama、K.Kikuchi 和 Y.Achiba：“C60 和 C70 单晶的生长、完美和缺陷”。

M.Tachibana: "Photo luminescence and crystal defects of C60 single crystals." J.Lumine.(in press). (1996)

M.Tachibana：“C60 单晶的光致发光和晶体缺陷。”

小島謙一: "有機結晶の欠陥の特性と結晶成長" 日本結晶成長学会誌. 22. 78-107 (1995)

Kenichi Kojima：“有机晶体和晶体生长的缺陷特征”日本晶体生长学会杂志 22. 78-107 (1995)。

M.Tachibana: "Growth and Mechanical Propertres of C_<60> Single Crystals." Trans.Mat.Res.Soc.Jpn. 14B. 1273-1276 (1994)

M.Tachibana：“C_<60> 单晶的生长和机械特性。”