Measurement of Anomalous Scattering Facotor near Absorption Edge by Pendellosung Beat

用 Pendellosung Beat 测量吸收边附近的反常散射因子

• 批准号: 06640454
• 负责人: YOSHIZAWA Masami
• 金额: $ 1.22万
• 依托单位: Saitama Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06640454/
• 关键词: X-ray Resonant Scattering; Pendellosung Beat; Anomalous Scattering Factor; Absorption Edge; Atomic Scattering Factor; Perfect Crystal; X-ray Dynamical Theory; GaAs

The anomalous scattering factor in the actual crvstal differs from it of the theoretical calculation based on the free atom model near the absorption edge, which affects the bonding effect of the solid. Now, there is not enough to the experimental data. We found Pendellosung beat (PBXRS) caused by the change of the anomalous scattering factor and PBXRS is possible to determine accurately the anomalous scattering factor near the absorption edge. In the study, we measure PBXRS by the semi-conductor samples and wisker samples and obtained the anomalous scattering factor near the absorption edge. Moreover, we consider the result that compare the obtained one with one of the theoretical calculation.Before the experiment, we examined the diffraction condition by the dynamical theory included the absorption effect which can be observed PBXRS fine. The experiment performed to use the synchrotron radiation and the four-circle diffractometer with SSD set on BL6C1 in KEK-PF.Further, these used the measuring system and the small rotating diffractmeter (minimum set angle 0.02 sec.) set on phi axis of the fourcircle diffractometer. The samples were GaAs that is EPO within 500 cm^<-2> and processed on the parallel plate type. PBXRS of 200 reflection were measured by the energy steps of 0.42 eV near Ga K-absorption edge. The anomalous scattering factor obtained from the measured data by the profile fitting method. In this study, the real prat of the anomalous scattering factor of Ga (f'_<Ga>) is 2-6% smaller at 50 eV below the absorption edge and 9-13% smaller at 5 eV than ones of the theoretical calculation by Parratt and Hempstead's method and by Cromer and Liberman's method, respectively.

实际晶体中的反常散射因子与吸收边附近自由原子模型理论计算的反常散射因子存在差异，影响了固体的键合效果。现在，还没有足够的实验数据。我们发现异常散射因子的变化引起的潘德洛松拍频（PBXRS），并且PBXRS可以准确地确定吸收边附近的异常散射因子。在研究中，我们通过半导体样品和晶须样品测量PBXRS，获得了吸收边附近的反常散射因子。此外，我们考虑将获得的结果与理论计算结果进行比较。在实验之前，我们通过动力学理论检查了衍射条件，包括可以在PBXRS中精细观察到的吸收效应。实验使用同步辐射和设置在 KEK-PF BL6C1 上的带 SSD 的四环衍射仪。此外，还使用了测量系统和设置在 phi 轴上的小型旋转衍射仪（最小设置角度 0.02 秒）。四圆衍射仪。样品是GaAs，即500cm ^ -2 内的EPO，并且在平行板类型上进行处理。 200 次反射的 PBXRS 通过 Ga K 吸收边缘附近 0.42 eV 的能量步长进行测量。通过轮廓拟合方法从测量数据得到的反常散射因子。在本研究中，Ga的反常散射因子(f'_<Ga>)的真实值在吸收边以下50 eV处比理论计算值小2-6%，在5 eV处比理论计算值小9-13%分别通过 Parratt 和 Hempstead 的方法以及 Cromer 和 Liberman 的方法。

项目成果

深町 共栄: "Laue caseのロッキングカーブに見られる位相変化の観測" 埼玉工業大学紀要. 第4号. 67-74 (1995)

Kyoei Fukamachi：“劳厄案例的摇摆曲线中看到的相变的观察”埼玉工业大学公报第4. 67-74号（1995年）。

吉沢正美: "ペンデルビートによる異常分散の研究" 埼玉工業大学紀要. 第4号(印刷中). (1995)

吉泽雅美：《潘德尔节拍的反常色散研究》，埼玉工业大学学报第 4 期（出版中）。

深町 共栄: "The Dispersion Surface of X-ray Very Near the Absorption Edge" Acte Crystallographica. A51. 253-258 (1995)

Kyoei Fukamachi：“非常接近吸收边缘的 X 射线色散表面”Acte Crystallographa 253-258 (1995)。

根岸 利一郎: "原子散乱因子の虚数部だけによる動力学回折における定在波" 埼玉工業大学紀要. 第4号. 83-90 (1995)

Riichiro Negishi：“仅由原子散射因子的虚部引起的动态衍射中的驻波”埼玉工业大学通报第 4. 83-90 号（1995 年）。

深町 共栄: "Dynamical Diffraction in the Laue Case with Borrmann Absorption" Acte Crystallographica. A50. 475-480 (1994)

Kyoei Fukamachi：“劳厄情况下的动态衍射与鲍曼吸收”Acte Crystallographa 475-480 (1994)。