Precise Fine-Pattern-Etching of Resist Using Supermagnetron Plasma

使用超磁控等离子体对抗蚀剂进行精确精细图案蚀刻

基本信息

批准号：
03805025
负责人：
KINOSHITA Haruhisa
金额：
$ 1.22万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03805025/
关键词：
magnetron plasma supermagnetron plasma semiconductor process low temperature etching quarter-micron etching plasma process reactive ion etching plasma etching ス-パ-マグネトロンプラズマ

项目摘要

With increase of the integration density of semiconductor integrated circuits, submicron pattern etchings were required. For the development of 256MbDRAM, 0.2mum fine pattern etchings would be necessary. After 2-5 years from now, the research of 1Gb-4GbDRAM and the study of O. 15-0.2mum fine pattern etchings will be started. In this two-years study of high-rate etching of 1mum thick resist, a supermagnetron plasma etcher developed about five years ago by the head investigator was used for its application to the industry use. The etch shape was controlled by chilling the lower cathode and substrates down to -30ﾟC using a low temperature circulator. The upper cathode was covered with a graphite plate to prevent from the contamination of the substrate surface by the deposition of sputtered metals. The graphite etched by oxigen plasma changes to CO gas and never contaminate the substrate.For the preparation of fine pattern etching, many kinds of etching characteristics were investigated at the lower cathode temperature of about -20ﾟC. The highest etch-rate and etch-uniformity were obtained at the rf phase difference of about 180ﾟ between the rf powers supplied to the upper and lower cathodes. The high etch rates of 0.5-1mum/min were obtained at the O_2 gas flow rate of 30-50 sccm. The resist layers on Si wafers, patterned with Si containing photoresist by using eximer laser exposure equipment, were etched. 0.25mum lines with vertical side walls were etched within a small side wall etching of 0.02mum by chilling the wafer down to -20ﾟC at the self-bias voltage of -140V. From this study, it was found that the 0.1mum fine pattern etching technology investigated for for the future ULSI process could be realized using the supermagnetron plasma.

随着半导体集成电路集成度的提高，需要亚微米图案刻蚀，256MbDRAM的开发需要2-5年后的1Gb-4GbDRAM的研究，需要0.2μm的精细图案刻蚀。 O. 15-0.2mum精细图案蚀刻将开始在这项为期两年的1mum厚抗蚀剂高速蚀刻研究中，首席研究员大约五年前开发了一种超磁控等离子体蚀刻机，用于工业用途。通过使用低温循环器将下阴极和基板冷却至-30°C来控制蚀刻形状。被石墨板覆盖，以防止溅射金属的沉积污染基材表面。经氧等离子体蚀刻的石墨变成CO气体，不会污染基材。在精细图案蚀刻的制备过程中，在约-20°C的较低阴极温度下研究了多种蚀刻特性，在所提供的射频功率之间的射频相位差约为180°时获得了最高的蚀刻速率和蚀刻均匀性。在30-50sccm的O_2气体流量下，对Si上的抗蚀剂层获得0.5-1mum/min的高蚀刻速率。使用准分子激光曝光设备用含硅光刻胶图案化的晶片，通过在自偏压下将晶片冷却至-20°C，在0.02μm的小侧壁蚀刻内蚀刻出具有垂直侧壁的0.25μm线。从这项研究中发现，为未来的ULSI工艺研究的0.1μm精细图案蚀刻技术可以是。使用超磁控等离子体实现。