Development of Negative-Ion-Beam Techniques for Film Formation and Crystallinity Control

负离子束成膜和结晶度控制技术的发展

基本信息

批准号：
61460065
负责人：
ISHIKAWA Junzo
金额：
$ 4.22万
依托单位：
Kyoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61460065/
关键词：
Negative ion Ion beam deposition Ion implantation Ion source Ion apparatus Film formation Crystallinity control 電子離脱断面積崩壊断面積

项目摘要

In this research project, two application apparatuses of negative ion beam were developed, and negative-ion-beam techniques for film formation and crystallinity control were also developed by using these apparatuses. From invesigation in this project, many important results were obtained.A negative ion beam deposition system has been constructed by combination of a high-current heavy negative ion source (NIABNIS), which was already developed by the authors, a mass-separator, and a newly designed deceleration electrode and lens system. Thw deposition system could deliver a sufficient amount of negative ions with a quite low energy controlled precisely for film formation. Carbon films were prepared with a mass-separated pure C^- or C2^- ion beam at various beam energy for investigating properties of the film. The properties of carbon films, such as optical band gap, electrical resistivity, atomic adensity, and thermal conductivity, depend upon a negative-ion-beam energy and ion species. … More These dependencies were considered to result from an energy density. which is deposited to a local area of a substrate by ion beam, and from a displacement probability of the film by it, or from a binding state (electron configuration) ofion species.On the other hand, a negative ion implanter was also constructed. By using this implanter, fundamental properties such as ion projection range and distribution of implanted atoms for nagative ion implantation were confirmed to be predicted with the LSS's theory as well as for a conventional positive ion implantation. Then, a crystallinity of implanted layer formed by C^- ion beam was investigated. After annealing the layer at 925゜C during 20 minutes, BETA-SiC bond was formed in the layer.Electron detachment cross sections for heavy negative ion beams were investigated as an interaction of negative ions with gas particles. This phenomenon is fundamental and important for pure physics, and such information is also important for technology and is required for designing an apparatus of negative ion beam. Less

在该研究项目中，开发了两个负离子束的应用设备，并通过使用这些设备开发了用于膜形成和结晶度控制的负离子光束技术。从该项目的调查中，获得了许多重要的结果。由高电流重离子源（NiaBnis）组合构建了负离子束沉积系统，该系统已经由作者，大众分离器和新设计的减速电子和镜头系统开发。 THW沉积系统可以提供足够数量的负离子，而精确控制膜形成的能量相当低的能量。用质量分离的纯C^ - 或C2^ - 离子束在各种束能量的情况下制备碳膜，以研究膜的特性。碳膜的性质，例如光条间隙，电阻，原子质性质和导热性，取决于负离子束的能量和离子物种。 …更多这些依赖性被认为是由于能量密度而导致的。它通过离子束沉积到底物的局部区域，并从膜的位移概率或从结合态（电子构型）物种中沉积到底物区域。另一方面，还构建了负离子植入剂。通过使用该植入剂，通过LSS的理论以及常规的阳性离子植入来预测，证实了纳入离子植入的基本特性，例如离子投影范围和植入原子的分布。然后，研究了由C^ - 离子束形成的植入层的结晶度。在20分钟内将层在925°C下退火后，在层中形成了β-SIC键。对沉重负离子束的电子脱离截面被研究为负离子与气体颗粒的负离子的相互作用。这种现象对于纯物理学是基本的，并且对于技术来说也很重要，并且对于设计负离子束的设备是必需的。较少的