Study on the ultra low resistivity phenomenon of hetero structure organic thin films

异质结构有机薄膜超低电阻率现象的研究

• 批准号: 05452182
• 负责人: YAMASHITA Tsutomu
• 金额: $ 4.48万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452182/
• 关键词: LB films; Ultra low resistivity; Organic superconductor; Conductive organic thin films; 有機単分子膜; ヘテロ構造; TCNQ; アラキジン酸カドミウム; ステアリル・アミン

Preparation and the electric properties of hetero structure LB films has been investigated with a view to inspect the ultra low resistivity phenomenon in the films. The ultra low resistivity has never seen in the hetero LB films of arachidic Cd (AA)/C_<15> TCNQ (TCNQ) for which Hino reported the ultra low resistivity. It has been said that the spontaneous electric field of a Z type TCNQ LB films and an electron cloud produced at the AA/TCNQ hetero interface play a important role to occur this phenomenon. Additionally, in this study, we have found that a part of TCNQ formed Cd-TCNQ complex with Cd^<2+> in a sub-phase solution and the complex could be changed to a conductive charge transfer (CT) complex. It was postulated that a two dimensional conducting layr had been formed at the interface of the non-polar AA and the polar TCNQ LB films by the Cd-TCNQ CT complex. The postulation implied us that the ultra low resistivity was probably resulted from the hetero structure of dielectric/2 d … More imensional conductor/dielectric on which the Ginzburg's theory of high temperature superconductivity based. In this study, we prepared conductive, polar and non-polar thin films by the LB method to realize the hetero structure and estimated film qualities and properties. Among these films, Y type arachidic Cd LB films has a sufficient films quality as the non-polar film. For conductive films, the LB films with a sufficiently high conductivity (1- S/cm) were successfully formed by use of a CT complex of BEDT-TTF (BO) and C_<15> TCNQ.For polar films, alternately deposited Y type films were fabricated instead of a labile Z type TCNQ LB films. It was found that the alternately deposited films have a sufficient quality and spontaneous electric potential of about 1.8 V for a 7 layrs film. The electric properties of the LB films with non-polar/conductive/polar hetero structure consisting of above LB films attract our attention from the application view point of new molecular devices as well as the ultra low resistivity phenomenon. Less

已经研究了杂种结构LB膜的制备和电性能，以检查膜中的超低抗性现象。在蛛网膜CD（AA）/C_ <15> TCNQ（TCNQ）的异质LB膜中从未见过超低耐药物，Hino报告了超低抗性。据说，在AA/TCNQ Hetero界面在AA/TCNQ Hetero界面上产生的Z型TCNQ LB膜的赞助电场和发生这种现象起着重要作用。此外，在这项研究中，我们发现TCNQ的一部分在子相溶液中与CD^<2+>形成CD-TCNQ复合物，并且可以将复合物更改为导电电荷转移（CT）复合物。据推测，通过CD-TCNQ CT复合物在非极性AA和极地TCNQ LB膜的界面形成了二维导电Layr。假设暗示我们超低耐药物可能是由于DieElectric/2 d的异质结构而产生的……更多的是基于金茨堡的基于高温超导性理论的更差的导体/介电。在这项研究中，我们通过LB方法制备了导电，极性和非极性薄膜，以实现异质结构和估计的膜质量和特性。在这些膜中，Y型Arac​​hidic CD LB膜具有足够的胶片质量作为非极性膜。对于导电膜，通过使用BEDT-TTF（BO）和C_ <15> TCNQ的CT复合物成功形成具有足够高的电导率（1- s/cm）的LB膜，用于极性膜，或者制造了Y型薄膜，而不是不稳定的Z型TCNQ LB膜。发现替代沉积的薄膜具有足够的质量和赞助电位，约1.8 V，对于7个Layrs膜。由非极性/导电/极性异质结构组成的LB膜的电性能从新分子设备的应用观点以及超低抗性现象引起了我们的注意。较少的

项目成果

西田直樹、他: "ヘテロLB膜の作製とその電気特性" 電気学会論文誌. 114-A. 40-46 (1994)

Naoki Nishida 等人：“异质 LB 薄膜的制备及其电性能”，日本电气工程师学会汇刊 114-A（1994 年）。

西田直樹: "ヘテロLB膜の作製とその電気特性" 電気学会論文誌. 114-A. 40-46 (1994)

Naoki Nishida：“异质 LB 薄膜的制备及其电性能”，日本电气工程师学会汇刊 114-A（1994 年）。

西田直樹: "ヘテロLB膜の作製とその電気特性" 電気学会論文誌A. 114-A. 40-46 (1994)

Naoki Nishida：“异质 LB 薄膜的制备及其电性能”，日本电气工程师协会会刊 A. 114-A（1994 年）。

Naoki Nishida et al.: "Preparation and electric properties of hetero LB films" Trans. IEE of Jpn.114-A-1. 40-46 (1994)

Naoki Nishida 等：“异质 LB 薄膜的制备和电性能”Trans。