Synthesis and Characterization of High Pure Diamaond Single Crystal

高纯金刚石单晶的合成与表征

• 批准号: 04453067
• 负责人: FUKUNAGA Osamu
• 金额: $ 4.16万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04453067/
• 关键词: Diamond; Single crystal; High pressure solvent method; Alloy solvents; Detection of liquidus temperature by DTA; Impurities in diamond; Calculation of impurity state in diamond; ダイヤモンド単結晶; 超高圧合成法; フラックス結晶成長; Fe-Ni系溶媒; Fe-Co系溶媒; 超高圧合成; 溶媒; 温度

This project was performed to establish basic scope of the synthwsis of high pure diamond single crystal. High pressure solvent growth method of single crystal diamond, which only possible method at present, was studied from basic view points. We examined various pressure-temperature region of diamond formation of the carbon alloy systems and found that some alloys such as Ni-Ti and Fe-B showed the region which no spontaneous nucleation of diamond was observed. The finding of these region canpropose better P-T condition to perform crystal growth only selectively on the surface of seed crystal.We developed piston cylinder type and cubic anvil type high pressure apparatus to establish DTA method to detect liquidus temperature under pressure for various carbon and solvent alloy system. Thirdly, we Thirdly, we examined Ni-Ti sovent as a typical system, because Ti has two opposed function namely agent to prevent nitrogen contamination to the diamond lattice and possible souce to supply TiC and TiN into diamond bulk as an inclusion. It was found that high purity diamond crystal can be grown in the solvent of an optimum amount of Ti.Impurities of light elements inthe diamond lattice could be detected by SIMS and possibly AES and these measurements can also corelate with molecular orbital energy calculation done for the case of Ni impurity.

进行该项目的目的是建立高纯钻石单晶合成的基本范围。从基本的观察点研究了单晶钻石的高压溶剂生长方法，目前仅研究了这种方法。我们检查了碳合金系统的钻石形成的各种压力温度区域，发现一些合金（例如Ni-Ti和Fe-B）显示了没有观察到钻石自发成核的区域。这些区域的发现只能在种子晶体的表面上选择性地进行更好的P-T条件。我们开发了活塞缸类型和立方砧型高压设备，以建立DTA方法，以在各种碳和溶剂合金系统的压力下检测Liquidus温度。第三，我们第三，我们检查了Ni-Ti Sovent作为典型系统，因为Ti具有两种相反的功能，即防止氮对钻石晶格的污染，并可能将TIC和TIN供应到钻石散装中。发现高纯度钻石晶体可以在最佳含量的TI的溶剂中生长。钻石晶格中的光元素可能会通过SIMS和可能的AES检测到，并且这些测量值也可以与Ni Inmanimity的情况下的分子轨道能量计算。

项目成果

S.Nakano and O.Fukunaga: "New Concept of the Synthesis of Cubic Boron Nitride" Metals and Materials Materials and Precesses. 3. 269-272 (1992)

S.Nakano 和 O.Fukunaga：“合成立方氮化硼的新概念”金属与材料材料和工艺。

S.Nakano, H.Ikawa and O.Fukunaga: "Synthesis of cubic boron nitrude using Li_3BN_2, Sr_3B_3N_4 and Ca_3B_2N_4 as solvent- catalysts" Diamond and related Materials. 3. 75-82 (1993)

S.Nakano、H.Ikawa 和 O.Fukunaga：“使用 Li_3BN_2、Sr_3B_3N_4 和 Ca_3B_2N_4 作为溶剂催化剂合成立方氮化硼”金刚石和相关材料。

N,Ohashi, O.Fukunaga, J.Tanaka, J.Isoya and S.Tanaka: "Electronic State of Ni ion in Diamond Caluculated by a DV-Xalpha Method" Phys. Rev. B. (to be submitted). (1994)

N,Ohashi、O.Fukunaga、J.Tanaka、J.Isoya 和 S.Tanaka：“通过 DV-Xalpha 方法计算的金刚石中 Ni 离子的电子态” Phys。

J.Y.Choi: "Effect of B_2O_3 and hBN crystallinity on cBN Synthesis" J.Am.Ceram.Soc.76. 2523-2528 (1993)

J.Y.Choi：“B_2O_3 和 hBN 结晶度对 cBN 合成的影响”J.Am.Ceram.Soc.76。

S.Nakano: "High Pressure Synthesis of Cubic Boron Nitride" Proceeding of 14th AIRAPT Conf.1993. (in press). (1993)

S.Nakano：“立方氮化硼的高压合成”第 14 届 AIRAPT Conf.1993 会议记录。