Development of quasi-2D Si devices with large magnetoresistance

大磁阻准二维硅器件的研制

• 批准号: 21K04822
• 负责人: Aurelie Spiesser
• 金额: $ 2.75万
• 依托单位: National Institute of Advanced Industrial Science and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2021
• 资助国家: 日本
• 起止时间: 2021-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21K04822/
• 关键词: silicon spintronics; magnetic tunnel contact; spin transport; thin channel; novel tunnel barrier; Si spintronics; Spin transport; Magnetic tunnel contacts; Thin channel; magnetic tunnel contacts; magnetoresistance; 2-dimensional channel

1) Spin transport in thin Si channels:We have deposited Fe/MgO on thin silicon channels having thicknesses ranging from 70 nm to 25 nm. We used molecular beam epitaxy to grow Fe/MgO, and the RHEED patterns indicate high quality epitaxial Fe/MgO. We then fabricated devices and measured spin transport properties as a function of the Si channel thickness. We observed clear two-terminal magnetoresistance (2T-MR) for all the devices. Although an increase of the 2T-MR was observed as the Si channel thickness decreases, the resistivity of the Si channel increased with decreasing the channel thickness. This prevented us from interpreting the results in a systematic manner, as one need to keep the resistivity constant in order to compare the results.2) Novel tunnel barrier for spin injection into Si:We investigated the epitaxial growth of BaO on Si as a novel tunnel barrier. The BaO lattice matches that of Si better than MgO. Therefore, higher quality epitaxial BaO might be obtained on Si, and potentially be a better fit as a tunnel barrier for Si spin transport devices. We investigated different growth temperature for BaO and found the optimum growth conditions to obtain epitaxial BaO on Si.3) Optimum contact resistance for 2T-MR in Si-based spin transport devicesThe 2T-MR in spin transport devices was determined for devices with a Si channel and Fe/MgO tunnel contacts of varying MgO thickness. We showed that the optimum and scaling of the 2T-MR are profoundly affected by the variation of the spin polarization with contact resistance. The results were published in APL (2023).

1）薄硅通道中的自旋输运：我们在厚度范围为70 nm至25 nm的薄硅通道上沉积了Fe/MgO。我们使用分子束外延生长 Fe/MgO，RHEED 图案显示出高质量的外延 Fe/MgO。然后我们制造了器件并测量了自旋输运特性与硅沟道厚度的函数关系。我们观察到所有器件都有清晰的两端磁阻（2T-MR）。尽管随着Si沟道厚度的减小观察到2T-MR增加，但Si沟道的电阻率随着沟道厚度的减小而增加。这使我们无法系统地解释结果，因为需要保持电阻率恒定才能比较结果。2）用于自旋注入 Si 的新型隧道势垒：我们研究了 BaO 在 Si 上的外延生长作为一种新型方法。隧道屏障。 BaO 晶格比 MgO 更匹配 Si。因此，可以在 Si 上获得更高质量的外延 BaO，并且可能更适合作为 Si 自旋输运器件的隧道势垒。我们研究了 BaO 的不同生长温度，并找到了在 Si 上获得外延 BaO 的最佳生长条件。3) Si 基自旋输运器件中 2T-MR 的最佳接触电阻自旋输运器件中的 2T-MR 是针对具有 Si 的器件确定的。不同 MgO 厚度的沟道和 Fe/MgO 隧道接触。我们表明，自旋极化随接触电阻的变化对 2T-MR 的优化和缩放有着深刻的影响。结果发表在 APL (2023) 上。

项目成果

Superimposed contributions to two-terminal and nonlocal spin signals in lateral spin-transport devices

对横向自旋输运器件中两端和非局域自旋信号的叠加贡献

• DOI: 10.1103/physrevb.104.144419
• 发表时间: 2021
• 影响因子: 3.7
• 作者: Jansen R.;Spiesser A.;Fujita Y.;Saito H.;Yamada S.;Hamaya K.;Yuasa S.
• 通讯作者: Yuasa S.

Optimum contact resistance for two-terminal magnetoresistance in a lateral spin valve

横向自旋阀两端磁阻的最佳接触电阻

• DOI: 10.1063/5.0137482
• 发表时间: 2023
• 影响因子: 4
• 作者: A. Spiesser; R. Jansen; H. Saito;S. Yuasa
• 通讯作者: S. Yuasa

Optimum contact resistance for two-terminal magnetoresistance in a lateral spin valve

横向自旋阀两端磁阻的最佳接触电阻

• DOI: 10.1063/5.0137482
• 发表时间: 2023
• 影响因子: 4
• 作者: A. Spiesser; R. Jansen; H. Saito;S. Yuasa
• 通讯作者: S. Yuasa

Superimposed contributions to two-terminal and nonlocal spin signals in lateral spin-transport devices

对横向自旋输运器件中两端和非局域自旋信号的叠加贡献

• DOI: 10.1103/physrevb.104.144419
• 发表时间: 2021
• 影响因子: 3.7
• 作者: Jansen R.;Spiesser A.;Fujita Y.;Saito H.;Yamada S.;Hamaya K.;Yuasa S.
• 通讯作者: Yuasa S.