Development of the novel next generation III-Nitride semiconductor wurtzite AlPN

新型下一代III族氮化物半导体纤锌矿AlPN的开发

• 批准号: 21K03418
• 负责人: PRISTOVSEK M.
• 金额: $ 2.66万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2021
• 资助国家: 日本
• 起止时间: 2021-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21K03418/
• 关键词: III 窒化物半導体; wurzite AlGaPN; 2次元電子ガス; III-N epitaxy; III-Nitride epitaxy; wurzite AlPN

The work continued on improved growth conditions for AlPN layers. It was found out that too much NH3 during growth was also pushing the P on an unwanted Al-lattice place. Using the recently delivered small size Mass flow Controller for P and NH3, controlled growth of pure AlPN layer have been achieved up to 6% in January 2023.Transitor structure have been made and the exisitence of a two/dimensional electron gase was confirmed using variable temperature Hall measurements. The mobilities were still lower than expected which is due to the reletivelz rough interfaces that are currentlz in the focus of research.The results so far have been presented at two international conferences, IC-MOVPE in June 2022 in Stuttgart, Germany and the IWN-2022 in October in Berlin, Germany and published in the peer-reviewed Journal of Crystal Growth (M. Pristovsek J, Crystal Growth 600 (2022) 126908 http.//doi,orf/10.1016/j.jcrysgro.2022.126908 ).From Dec. 1st an international joint research project on AlPN barrier growth for high-electron mobitlity transistors (HEMTs) started together with Ferdinand-Braun-Institute in Berlin, Germany. As part a new Postdoc was hired, so progress in 2023 is expected to increase. Also the project included a cooperature with a young research focussing on Transmission electron microcopy (TEM), which is essential for the further optimisation of interfaces.

继续致力于改善 AlPN 层的生长条件。结果发现，生长过程中过多的 NH3 也会将 P 推到不需要的 Al 晶格位置。使用最近交付的 P 和 NH3 小型质量流量控制器，在 2023 年 1 月实现了纯 AlPN 层的受控生长高达 6%。已经制作了晶体管结构，并使用变量确认了二维电子气的存在温度霍尔测量。迁移率仍然低于预期，这是由于相对粗糙的界面是目前研究的重点。迄今为止，研究结果已在两次国际会议上发表，分别是 2022 年 6 月在德国斯图加特举行的 IC-MOVPE 和 IWN- 2022 年 10 月在德国柏林发表于同行评审的 Journal of Crystal Growth (M. Pristovsek J, Crystal Growth 600 (2022)) 126908 http.//doi,orf/10.1016/j.jcrysgro.2022.126908 )。从 12 月 1 日起，与柏林费迪南德-布劳恩研究所共同启动了高电子迁移率晶体管 (HEMT) 的 AlPN 势垒生长国际联合研究项目， 德国。由于聘请了新的博士后，因此 2023 年的进展预计会有所增加。该项目还包括与一项专注于透射电子显微镜（TEM）的年轻研究人员的合作，这对于进一步优化界面至关重要。

项目成果

AlPyN1-y: A new material for GaN based electronics

AlPyN1-y：用于 GaN 基电子产品的新材料

• 发表时间: 2022
• 作者: Kenji Hayashida;Hiroshi Akera;Markus Prisovsek
• 通讯作者: Markus Prisovsek

AlPN on GaN: Extending the III-Nitride Semiconductor Family

GaN 上的 AlPN：扩展 III 族氮化物半导体系列

• 发表时间: 2021
• 作者: 氏家勇;明楽浩史;Markus Pristovsek
• 通讯作者: Markus Pristovsek

A debut for AlPN (invited article)

AlPN首次亮相（特邀文章）

• 发表时间: 2021
• 期刊: Compound Semiconductor
• 作者: 北川雄真;鈴木雄太;手塚信一郎;明楽浩史;Markus Pristovsek
• 通讯作者: Markus Pristovsek

Wurtzite AlPyN1-y: A new member of the III-Nitride Family

纤锌矿AlPyN1-y：III族氮化物家族的新成员

• 发表时间: 2021
• 作者: 氏家勇;明楽浩史;Markus Pristovsek;Markus Prisovsek
• 通讯作者: Markus Prisovsek

The growth of AlPyN1-y A new member of the III-N family

AlPyN1-y的生长 III-N家族的新成员

• 发表时间: 2022
• 作者: 北川雄真;鈴木雄太;手塚信一郎;明楽浩史;Markus Pristovsek;Markus Pristovsek
• 通讯作者: Markus Pristovsek