Prerequisites and Specifications for Sub Ångström Low-Voltage Transmission Electron Microscopy (SALVE) operation for investigating nano-scale properties of beam-sensitive objects

用于研究光束敏感物体的纳米级特性的亚埃级低压透射电子显微镜 (SALVE) 操作的先决条件和规范

• 批准号: 270370833
• 负责人: Professorin Dr. Ute Kaiser
• 金额: --
• 依托单位: Zentrale Einrichtung Elektronenmikroskopie
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/270370833?language=en
• 关键词: Prerequisites; Specifications; Sub; ngstr; Low

This project is dedicated to research on high-resolution low-voltage transmission electron micros-copy and spectroscopy to understand further the interaction of low-energy electrons with matter in order to elucidate the benefits of imaging at low voltages radiation-sensitive objects which cannot be imaged at voltages appreciably higher than about 80 kV. To specify the application of low-voltages, we must find optimum strategies and develop techniques in four main fields: 1. HRTEM imaging of electron-beam-sensitive materials at low voltages: Towards understand-ing radiation damage mechanism at low voltages Application of the concept "sandwich-method" and"carbon nanotube as host" to a variety of beam-sensitive objects and to image and to understand their dynamics at different accelerating voltages. 2. Spectroscopy at low voltages Development of w-q spectroscopy mode for the post-column energy filter and application to experiments on beam-sensitive objects. 3. Image calculations for low voltages Improvement of our calculation algorithm for low-voltage TEM and implementation into standard software for image calculation and analysis, including elastic, inelastic and dose-dependent calculations. Further develop the understanding of contrast with the CC-corrector and defining optimum contrast conditions for low-voltage high-resolution TEM. 4. In-Situ Microscopy and sample preparation at low voltages In-situ measurements on the relationship between defects in a two-dimensional material and its electrical properties in dependence of the accelerating voltage. Methodological developments on preparation and cleanness of low-noise substrates.

该项目致力于研究高分辨率低电压透射电子显微镜和光谱学，以进一步了解低能电子与物质的相互作用，从而阐明在低电压辐射敏感物体上成像的好处，而这些物体无法在低电压下成像。在明显高于约 80 kV 的电压下成像。为了明确低电压的应用，我们必须在四个主要领域找到最佳策略和开发技术： 1. 低电压电子束敏感材料的 HRTEM 成像：了解低电压下的辐射损伤机制。将“三明治法”和“碳纳米管作为主体”的概念应用于各种光束敏感物体，并成像并了解它们在不同加速电压下的动力学。 2. 低电压光谱学 开发柱后能量滤波器的 w-q 光谱模式并应用于光束敏感物体的实验。 3.低电压图像计算改进了低电压TEM计算算法，并将其实现到图像计算和分析的标准软件中，包括弹性、非弹性和剂量依赖性计算。进一步加深对 CC 校正器对比度的理解，并定义低压高分辨率 TEM 的最佳对比度条件。 4. 低电压下的原位显微镜和样品制备原位测量二维材料中的缺陷及其电性能与加速电压的关系。低噪声基板的制备和清洁方法学进展。

项目成果

Electron Source Brightness and Illumination Semi-Angle Distribution Measurement in a Transmission Electron Microscope

透射电子显微镜中的电子源亮度和照度半角分布测量

• DOI: 10.1017/s1431927618000223
• 发表时间: 2018
• 期刊: Microscopy and Microanalysis
• 影响因子: 2.8
• 作者: F. Börrnert; J. Renner; U. Kaiser
• 通讯作者: U. Kaiser

Atomic mechanism of metal crystal nucleus formation in a single-walled carbon nanotube

单壁碳纳米管中金属晶核形成的原子机制

• DOI: 10.1038/s41557-020-0538-9
• 发表时间: 2020-08-28
• 期刊: Nature Chemistry
• 影响因子: 21.8
• 作者: Kecheng Cao;J. Biskupek;C. Stoppiello;R. Mcsweeney;T. Chamberlain;Zheng Liu;K. Suenaga;S. Skowron;E. Besley;A. Khlobystov;U. Kaiser
• 通讯作者: U. Kaiser

Significance of matrix diagonalization in modelling inelastic electron scattering.

矩阵对角化在模拟非弹性电子散射中的意义

• DOI: 10.1016/j.ultramic.2016.11.011
• 发表时间: 2017
• 期刊: Ultramicroscopy
• 影响因子: 2.2
• 作者: Z. Lee; R. Hambach; U. Kaiser;H. Rose
• 通讯作者: H. Rose

Carbon Nanotubes as Electrically Active Nanoreactors for Multi-Step Inorganic Synthesis: Sequential Transformations of Molecules to Nanoclusters and Nanoclusters to Nanoribbons.

碳纳米管作为多步无机合成的电活性纳米反应器：分子到纳米团簇和纳米团簇到纳米带的顺序转化。

• DOI: 10.1021/jacs.6b03633
• 发表时间: 2016-06-23
• 期刊: Journal of the American Chemical Society
• 影响因子: 15
• 作者: Á. Botos;J. Biskupek;T. Chamberlain;G. Rance;C. Stoppiello;J. Sloan;Zheng Liu;K. Suenaga;U.
• 通讯作者: U.

Chromatic Aberration Correction for Atomic Resolution TEM Imaging from 20 to 80 kV.

用于 20 至 80 kV 原子分辨率 TEM 成像的色差校正。

• DOI: 10.1103/physrevlett.117.076101
• 发表时间: 2016-08-09
• 期刊: Physical review letters
• 影响因子: 8.6
• 作者: M. Linck;P. Hartel;S. Uhlemann;F. Kahl;H. Müller;J. Zach;M. Haider;Marcel Niestadt;M. Bischoff;J. Biskupek;Z. Lee;T. Lehnert;F. Börrnert;H. Rose;U. Kaiser
• 通讯作者: U. Kaiser