CAREER: Towards highly efficient UV emitters with lattice engineered substrates
事业:采用晶格工程基板实现高效紫外线发射器
基本信息
- 批准号:2338683
- 负责人:
- 金额:$ 55万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2024
- 资助国家:美国
- 起止时间:2024-07-01 至 2029-06-30
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
The objective of this CAREER project is to significantly improve the efficiency of light emitting diodes in the ultraviolet range, especially in those ranges where incumbent methods show an abrupt drop in efficiency. A new class of flexible materials will be used that will help improve strain related issues faced by this class of ultraviolet emitters, and these materials will also direct light in a specific direction to efficiently extract light out of the device. A combination of experimental and theoretical investigations will be employed to demonstrate light extraction, material, and device level improvements all resulting in up to 10x improvement over current solutions. The developed structures will not only enhance the capabilities of currently available products but will also enable completely new applications in the field of medical science – skin disease treatments and cardiovascular/eye surgeries, agriculture – food storage and farming, sanitization- air, surface and water; energy savings from efficient devices resulting in sustainability and finally improve reliability of security systems used in banks and for ID cards. The broader impacts activities will involve assessing the impact of proposed research and large-scale adoption of ultraviolet emitters over incumbent mercury lamps on various fields such as biodiversity, medicine and food security. Incorporation of a module on ”semiconductors are fun” in high school curriculum is proposed by leveraging the research experience for teachers program to introduce semiconductors and their societal impacts early on in the education system. Different kinds of workforce trainings at various levels – precollege, undergraduate and graduate level are proposed to fill the national level workforce shortage demand owing to the encouraging CHIPS Act related initiatives. Community engagement activities are planned with farming communities to generate awareness about ultraviolet emitters and how they can enhance national food security.Technical description: This CAREER project aims to address the gap in external quantum efficiency of III- nitride solid state emitters in the ultraviolet emission wavelength range of 280-365 nm to enable a new regime of high-power ultraviolet light emitting diodes. There is a sharp wavelength dependence on the efficiency of devices in this wavelength range, that will be decoupled by the proposed solution. The research approach will involve the development of mechanically compliant and reflective substrates based on porous semiconductors, to redefine the critical thickness metrics used to design group III-nitride based device epitaxial structures to achieve a projected efficiency improvement by an order of magnitude. Using novel quantum well and carrier injection layers, new methods of synthesis of porous materials, and implementation of semiconductor reflectors will be employed. Mechanical, optical and opto-electrical computational models will be developed to guide experimental explorations and enhance the understanding of the mechanics and physics of the epitaxial structures being used.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
该 CAREER 项目的目标是显着提高发光二极管在紫外线范围内的效率,特别是在现有方法显示效率突然下降的范围内,将使用一种新型柔性材料,这将有助于改善与应变相关的情况。此类紫外线发射器面临的问题,这些材料还将把光引导到特定方向,以有效地将光从设备中提取出来。将采用实验和理论研究的结合来证明光提取、材料和设备水平的改进。所有结果最多为所开发的结构比现有解决方案提高了 10 倍,不仅将增强现有产品的功能,还将在医学领域实现全新的应用 - 皮肤病治疗和心血管/眼科手术、农业 - 食品储存和种植、消毒。 - 空气、地表和水;通过高效设备实现节能,最终提高银行和身份证安全系统的可靠性。更广泛的影响活动将涉及评估拟议研究和大规模采用紫外线发射器的影响。超过现有的汞灯建议利用教师项目的研究经验,在生物多样性、医学和粮食安全等各个领域纳入“半导体很有趣”的模块,以便在教育系统中尽早介绍半导体及其社会影响。由于令人鼓舞的《CHIPS 法案》相关举措,计划与农业社区一起开展社区参与活动,以提高人们对紫外线发射器及其使用方式的认识,因此建议开展各种级别的劳动力培训——大学预科、本科生和研究生级别的培训,以满足国家级劳动力短缺的需求。能增强国家粮食安全。技术描述:该CAREER项目旨在解决280-365 nm紫外发射波长范围内III族氮化物固态发射器的外量子效率差距,以实现高功率紫外光发射的新机制该波长范围内的器件效率对波长有很大的依赖性,该研究方法将涉及基于机械顺应性和反射性基板的开发。在多孔半导体上,重新定义用于设计基于III族氮化物的器件外延结构的临界厚度指标,以使用新颖的量子阱和载流子注入层、多孔材料的新合成方法实现预计的效率提高一个数量级。将开发机械、光学和光电计算模型来指导实验探索并增强对所使用的外延结构的力学和物理的理解。该奖项是 NSF 的法定使命,并具有通过使用基金会的智力价值和更广泛的影响审查标准进行评估,该项目被认为值得支持。
项目成果
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