Strain Effects in Transition Metal Dichalcogenide Field-Effect Transistors

过渡金属二硫族化物场效应晶体管中的应变效应

• 批准号: 2335713
• 负责人: Kevin Brenner
• 金额: $ 31.02万
• 依托单位: University of Texas at Dallas
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-10-01 至 2025-09-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2335713&HistoricalAwards=false
• 关键词: Strain; Effects; Transition; Metal; Dichalcogenide; Strain; Effects; Transition; Metal; Dichalcogenide

Title: Strain Effects in Monolayer Transition Metal Dichalcogenide Field-Effect TransistorsStrain is a powerful variable in the design and performance of electron devices. Not only has it played a central role in boosting Si technology, but it continues to enable entirely new types of devices like straintronics and electronic skins. In comparison to bulk semiconductors, monolayer transition metal dichalcogenides (TMDs) have considerably richer relationships with strain due to their atomic thickness. This not only allows these materials to access deformations not possible with micromachined Si, but also results in strain being an unintentional artifact of many common device processing steps. This project will investigate the effects of strain on field-effect transistors (FETs) with monolayer TMD channels, which can advance the performance limits of these devices and solve major integration and reliability challenges associated with deleterious strain. Knowledge distilled from this project will support K-12 science, technology, engineering, and mathematics (STEM) programs in the region through the Caruth Institute for Engineering Education (CIEE), an educational center located at the investigator's university. This includes the development of hands-on summer campus hosted at CIEE, and the development of STEM-related lesson plans for school districts around the region that promote diversity in engineering.The goal of this project is to provide a rigorous investigation of the effect of strain on the low-field and high-field transport in monolayer TMDs and at their contacts. The proposed research has potential to be transformative in the field of electronic devices as strain can dramatically modulate the band structure, driving record piezoresistive effects in the low-field transport and tuning saturation velocity in the high-field transport. Furthermore, new quantitate knowledge on the effects of strain at contacts can advance technologies such as flexible devices, where contact failure is often described empirically. In addition to the uniform strain, the effects of short-range strain fluctuations on the transport will be characterized and fit to newly developed transport models. Devices will be fabricated on flexible substrates with varying channel lengths, which allows for a decoupling of the channel and contacts. Strain will be imparted using mechanical deformations, and characterized using Raman spectroscopy and photoluminescence. Electrical characterizations will be fit to low-field (Boltzmann Transport Equation) and high-field (multivalley Monte Carlo) transport models that account for several scattering mechanisms. This includes phonons, neutral and charge defects, and the development of some of the first models to account for short-range strain variation. All knowledge generated by this project will be disseminated through publications and inclusions in the investigator's courses to reach the broadest possible audience.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

标题：单层过渡金属二分法元素现场效应晶体管晶体的应变效应是电子设备设计和性能的强大变量。它不仅在提高SI技术方面发挥了核心作用，而且还可以继续提供全新的设备，例如WearTronics和Electronic Skins。与散装半导体相比，单层过渡金属二核苷（TMDS）由于其原子厚度而与菌株具有更丰富的关系。这不仅允许微机械SI无法访问这些材料的变形，而且还导致应变是许多常见设备处理步骤的无意间伪像。该项目将研究用单层TMD通道对菌株对现场效应晶体管（FET）的影响，这可以提高这些设备的性能限制，并解决与有害菌株相关的主要集成和可靠性挑战。从该项目中提取的知识将通过该地区的K-12科学，技术，工程和数学（STEM）计划通过Caruth工程教育研究所（CIEE），该研究所位于研究者大学。这包括开发在CIEE举办的夏季夏季校园，以及该地区促进工程多样性的该地区学区的与STEM相关的课程计划的制定。该项目的目的是严格调查对菌株对单层TMD的低场和高场运输的影响。拟议的研究有可能在电子设备领域进行变化，因为应变可以显着调节带状结构，从而在低场传输中驱动记录记录的压电效应，并在高视野传输中进行调谐饱和速度。此外，新的量化触点菌株影响的知识可以推进诸如柔性设备之类的技术，在这些技术上通常会通过经验来描述接触失败。除均匀应变外，短距离应变波动对运输的影响还将被表征并适合新开发的传输模型。设备将在具有变化的通道长度的柔性基材上制造，从而使通道和触点脱钩。应变将使用机械变形施加，并使用拉曼光谱和光致发光进行表征。电特性将适合低场（Boltzmann传输方程）和高场（Multivalley Monte Carlo）传输模型，这些模型占多种散射机制。这包括声子，中性和电荷缺陷，以及一些用于说明短距离应变变化的模型的开发。该项目产生的所有知识将通过调查员课程中的出版物和包容性传播，以吸引最广泛的受众。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子优点和更广泛影响的评估审查标准来通过评估来获得支持的。