EAGER: Ultra Broadband Fully Integrated GaN Front End Integrated Chip

EAGER：超宽带全集成GaN前端集成芯片

• 批准号: 2332167
• 负责人: Bayaner Arigong
• 金额: $ 30万
• 依托单位: Florida Agricultural and Mechanical University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-09-15 至 2025-08-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2332167&HistoricalAwards=false
• 关键词: EAGER; Ultra; Broadband; Fully; Integrated; EAGER; Ultra; Broadband; Fully; Integrated

The Historically Black Colleges and Universities - Undergraduate Program (HBCU-UP) provides support to strengthen STEM undergraduate education and research at HBCUs. This EArly-concept Grant for Exploratory Research (EAGER) expresses the need for innovative research activity in integrated chip design, fabrication, and validation at Florida A&M University (FAMU). The project focuses on the development of fully integrated GaN front end chips covering a wide spectrum. This work will be accomplished via investigation of a novel transversal filter type circuit topology to boost the efficiency of power amplification. The establishment of this research effort will further enhance the research capacity at FAMU in direct response to the CHIPS and Science Act.The goal of this project is to develop a novel transversal filter type broadband distributed power amplifier, a wideband radio frequency switch, a low noise amplifier, a fully integrated solution, and novel packaging and set up of an experimental validation test bench for the proposed chip. Additionally, the project seeks to 1) develop a course for integrated chip design, fabrication, and validation, 2) develop a summer research program for undergraduate students, and 3) share the developed course materials with other HBCUs promoting the research activities in semiconductor, chip design, and experiment validation.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

历史悠久的黑人学院和大学 - 本科课程（HBCU -UP）为加强HBCUS的STEM本科教育和研究提供了支持。这项对探索性研究（急切）的早期概念赠款表示需要在佛罗里达州A＆M大学（FAMU）的综合芯片设计，制造和验证中进行创新研究活动。该项目着重于涵盖广泛范围的完全集成的GAN前端芯片的开发。这项工作将通过研究新型的横向滤波器类型电路拓扑来实现，以提高功率扩增的效率。这项研究工作的建立将进一步提高FAMU的研究能力，以直接响应芯片和科学法案。该项目的目的是开发一种新型的横向滤波器类型宽带分布式功率放大器，宽带射频开关，低噪声放大器，完全集成的解决方案以及新颖集成的解决方案以及新颖的包装和实验验证测试板的新颖包装和设置。此外，该项目寻求1）开发一门集成芯片设计，制造和验证的课程，2）为本科生开发夏季研究计划，以及3）与其他H​​BCU共享开发的课程材料，促进了半导体，芯片设计和实验验证中的研究活动，这些奖项通过NSF的授权和范围的启用。 标准。