GOALI: Manufacturing Large, Diamond Single Crystals via High-Pressure, High-Temperature Growth

目标:通过高压、高温生长制造大型金刚石单晶

基本信息

  • 批准号:
    2308877
  • 负责人:
  • 金额:
    $ 44.28万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2023
  • 资助国家:
    美国
  • 起止时间:
    2023-07-01 至 2026-06-30
  • 项目状态:
    未结题

项目摘要

This Grant Opportunities for Academic Liaison with Industry (GOALI) award supports research that contributes new knowledge related to diamond single crystal manufacturing, promoting science and advancing national prosperity, health, and security. Diamond single crystals have long been prized as gemstones but have also shown great promise for new technical applications because of their unique properties. While natural diamonds are formed from carbon in the earth’s crust at depths greater than 100 miles, these conditions can be mimicked in the laboratory allowing synthetic diamond crystals of the highest quality to be manufactured using the High-Pressure, High-Temperature growth process. This grant supports fundamental research to improve this process so that single-crystal diamonds can be manufactured in larger sizes, at ultra-high quality, and for less cost, thus enabling application in optical elements for high-power X-ray systems, as well as in devices for radiation detectors in nuclear reactors and medical applications, power electronics, and quantum computing. Results from this research will favorably impact economic competitiveness, and national security. This research involves several disciplines including advanced manufacturing, computational modeling, crystal growth, and materials science. The multi-disciplinary approach helps broaden participation and positively impacts engineering education.Manufacturing processes employed to grow large, single crystals must achieve atomic-level structural perfection while simultaneously maintaining yields that are high enough to meet cost objectives. This project addresses the production of single-crystal diamond via crystal growth in a High-Pressure, High-Temperature system. This system has the capability to grow diamonds of the highest crystalline quality. However, extreme pressure (5 GPa) and temperature (1,500 K) make direct, in situ diagnostics of growth impossible and modeling a vital tool for process improvement. This project develops and applies novel computational models based on thermodynamics, kinetics, and transport to better understand the fundamental mechanisms responsible for single-crystal diamond growth in the High-Pressure, High-Temperature system. These models are validated via growth experiments conducted by GOALI partner, Euclid Beamlabs, LLC, and applied to improve manufacturing outcomes, such as large crystal size and increased growth rate. An important goal is to avoid process conditions leading to inclusions, which are micron-sized defects containing metallic solvent trapped during growth. Multi-scale models describe steps of atomic height that move across the facets of the growing diamond and predict when an equidistant train of steps destabilizes to form bunches, triggering inclusion formation. Understanding the onset of bunching thus allows innovative growth strategies, such as time-dependent tilting of the system, to be assessed by modeling and tested using experiments.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这项与行业联络的赠款机会(Goari)奖支持了与钻石单晶制造有关的新知识,促进科学并促进国家繁荣,健康和安全。钻石单晶长期以来一直被漆成宝石,但由于其独特的特性,对新技术应用也表现出了巨大的希望。虽然天然钻石是由地壳中的碳形成的,深度大于100英里,但可以在实验室中模仿这些条件,从而可以使用高压,高温的生长过程制造出最高质量的合成钻石晶体。该赠款支持基本研究以改善此过程,以便可以以更大的尺寸,超高质量和成本更低的成本制造单晶钻石,从而在光学元素中适用于高功率X射线系统,以及用于核反应器和医疗应用,电力电子和量子计算的辐射探测器的设备。这项研究的结果将对经济竞争力和国家安全有利。这项研究涉及几个学科,包括高级制造,计算建模,晶体增长和材料科学。多学科的方法有助于扩大参与并积极影响工程教育。用于生长大型的单晶所采用的制造过程必须实现原子级的结构完美,同时保持足够高的收益率,以达到成本目标。该项目通过高压高温系统中的晶体生长来解决单晶钻石的生产。该系统具有生长最高晶体质量的钻石。但是,极端压力(5 GPA)和温度(1,500 K)直接使生长不可能,并为改进过程改进建模至关重要的工具。该项目开发并应用了基于热力学,动力学和运输的新型计算模型,以更好地了解高压高压高温系统中负责单晶钻石生长的基本机制。这些模型通过守门员合作伙伴,Euclid Beamlabs,LLC进行的增长实验验证,并应用于改善制造成果,例如较大的晶体大小和增长速度的提高。一个重要的目标是避免导致夹杂物的过程条件,后者是在生长过程中包含被困在生长过程中的金属解决方案的微米大小的缺陷。多尺度模型描述了原子高度的步骤,这些步骤跨越了生长的钻石的各个方面,并预测了何时相等的步骤不稳定地形成束形成束,从而触发了包容性形成。因此,了解束的开始允许通过建模和使用实验进行建模和测试来评估系统的创新增长策略,例如时间依赖于系统的倾斜度。该奖项反映了NSF的法定任务,并被认为是通过基金会的知识分子优点和更广泛的审查标准通过评估来通过评估来获得的支持。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

暂无数据

数据更新时间:2024-06-01

Jeffrey Derby的其他基金

GOALI: Toward Improving Quality and Yield of Large-Area, Single-Crystal Sapphire Wafers via Fundamental Understanding of Bubble Engulfment During Growth
目标:通过对生长过程中气泡吞噬的基本了解,提高大面积单晶蓝宝石晶圆的质量和产量
  • 批准号:
    1760689
    1760689
  • 财政年份:
    2018
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant
Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
研讨会:第九届晶体生长建模国际研讨会(IWMCG-9);
  • 批准号:
    1853512
    1853512
  • 财政年份:
    2018
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant
Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
实现太阳能硅的可行水平带状生长:理解和改善工艺不稳定性
  • 批准号:
    1336164
    1336164
  • 财政年份:
    2013
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant
Collaborative Research: ARI-MA Development of Improved CMT and CZT Nuclear Detectors for Homeland Security Applications
合作研究:ARI-MA 开发用于国土安全应用的改进型 CMT 和 CZT 核探测器
  • 批准号:
    1140001
    1140001
  • 财政年份:
    2011
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant
Materials World Network: Detached Bridgman Growth of Semiconductor Crystals
材料世界网络:半导体晶体的分离布里奇曼生长
  • 批准号:
    1007885
    1007885
  • 财政年份:
    2010
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Continuing Grant
    Continuing Grant
Sixth International Workshop on Modeling in Crystal Growth (IWMCG-6) to be held in Lake Geneva, WI, August 9-13, 2009
第六届晶体生长建模国际研讨会 (IWMCG-6) 将于 2009 年 8 月 9 日至 13 日在威斯康星州日内瓦湖举行
  • 批准号:
    0939445
    0939445
  • 财政年份:
    2009
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant
GOALI: Thermal-Capillary Analysis of the Horizontal Ribbon Growth of Solar Silicon via Finite-Element Process Models
GOALI:通过有限元过程模型对太阳能硅的水平带生长进行热毛细管分析
  • 批准号:
    0755030
    0755030
  • 财政年份:
    2008
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant
Employing Convective Assembly for Micro-/Nano-Fabrication of Colloidal Crystals
采用对流组装进行胶体晶体的微/纳米制造
  • 批准号:
    0726958
    0726958
  • 财政年份:
    2007
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant
Growth of crystalline ZnO nanowires from solution: From theory to application
从溶液中生长结晶氧化锌纳米线:从理论到应用
  • 批准号:
    0729924
    0729924
  • 财政年份:
    2007
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant
ACT/SGER: Evaluation of a Novel Approach for Improved Growth of CdZnTe
ACT/SGER:改进 CdZnTe 生长的新方法的评估
  • 批准号:
    0345183
    0345183
  • 财政年份:
    2003
  • 资助金额:
    $ 44.28万
    $ 44.28万
  • 项目类别:
    Standard Grant
    Standard Grant

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