EAGER: Magnetoelectric Thin Films for High Frequency Devices

EAGER：用于高频设备的磁电薄膜

• 批准号: 2236879
• 负责人: Menka Jain
• 金额: $ 29.93万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-10-01 至 2024-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2236879&HistoricalAwards=false
• 关键词: EAGER; Magnetoelectric; Thin; Films; Frequency

Tunable radio-frequency/microwave signal-processing devices, such as filters, resonators, phase-shifters, are widely used in modern communication systems. With the advent of novel applications related to 5G, new technologies are being developed so that devices can be tuned broadly across multiple frequency channels. Conventionally, magnetic fields are used for tuning such devices. However, they are bulky, slow, and consume lot of power. Thus, there is a critical need for performance improvement of such frequency tunable devices. This NSF project is aimed to develop and test electrically tunable film based high frequency devices that can be rapidly tuned in limited power budget. Objectives of this project are to develop magnetoelectrics multiferroics (ME MFs) composite films based electrically tunable high-frequency devices with large figure of merit (=tunability/insertion-losses) and power-efficiency. Such composite films consists of magnetic and ferroelectric materials and can be tuned electrically and magnetically due to ME coupling. The intellectual merit of the project primarily includes: (i) gaining comprehensive understanding on role of distribution and ratio of magnetic and ferroelectric phases in the composite films to achieve large ME coupling as well as (ii) fabricating and testing ME film based resonators and filters at higher frequencies. The project will bring transformative change as electric voltages are readily available on circuits and the proposed devices are expected to exhibit large figure of merit and allow easy integration with the existing semiconductor technology. Anticipated impacts of this project include training of diverse groups of students in the field of engineering and testing of voltage tunable devices in collaboration with the Oakland University. Minority graduate students will be recruited for this research project. Underrepresented undergraduate students will gain research experience in PI’s lab through McNair Scholar Program. Summer opportunities will be provided to local high-school teachers to learn and develop educational demo kits for high school students based on tunable devices. The overarching objective of this project is to engineer magnetoelectric multiferroic nanocomposite and heterostructured films for developing electrically tunable high-frequency coplanar waveguide resonators and filters with high figure of merit. This project work includes: (i) fabrication of ferroelectric and magnetostrictive composite and heterostructured films with various distribution and ratio of the two phases, (ii) measurement and analysis of the ferroelectric properties and leakage currents, (iii) ME coupling measurements, and (iv) fabrication as well as testing of resonators and filters based on optimized films with high figure of merit. This work will contribute significantly by providing great opportunities for developing power-efficient, compact, high-frequency multi-band voltage tunable devices over 2-12 GHz with large figure of merit that can be integrated with the existing semiconductor technology. The fundamental understanding gained through this project can be expanded to other high-frequency devices, such as phase shifters, oscillators, memory devices, magnetic sensors, and antennas. The educational goal of the project is to train and prepare future generation of engineers in modern multifunctional device technology. The outreach activities will provide training, knowledge, and research exposure to a diverse group of students and high school teachers in this interdisciplinary research area.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

可调式射频/微波信号处理设备（例如过滤器，谐振器）在离子系统中广泛使用。因此。开发基于磁性膜的磁性膜（ME MFS），具有较大的功绩（=可调性/插入性损失）和功率效率的可调式膜。 Project Primarily Includes: (I) GAINING COMPREHENSIVE UNDERSTANDING ONDERSTANG ONDERSTANG ONDERSTAND ONDERSTAND ONDERSTANDING ONDERSTANDING ONDERSTANDING ONDERSTANDING ONDERSTANDING ONDERSTANDING ONDERSTANDING ONDERSTANDING ONDERSTANDING ONDERSTANG Role of Distribution and Ratio of Magnetic and FerroElectric Phases in The Composite Films to Achieve Me Coupling As (II) STING ME FILM BASED谐振器和较高频率的过滤器将在电路区域的电压区域可用，而拟议的设备可以轻松地与Technolo Gy进行预期的培训。通过McNair Scholar计划在PI实验室中的研究经验。包括：（i）在两个阶段的杂种和磁性薄膜的制造，并分析铁电特性和泄漏电流，我基于膜的耦合测​​量和过滤器。频率多频段电压可调设备在2-12 GHz上具有很大数字的功绩，可以将CAT与现有的半导体技术集成在一起。记忆设备，磁性传感器和天线。支持基金会的智力优点和更广泛影响评论标准的评估。