EAGER: Magnetoelectric Thin Films for High Frequency Devices

EAGER：用于高频设备的磁电薄膜

• 批准号: 2236879
• 负责人: Menka Jain
• 金额: $ 29.93万
• 依托单位: University of Connecticut
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-10-01 至 2024-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2236879&HistoricalAwards=false
• 关键词: EAGER; Magnetoelectric; Thin; Films; Frequency

Tunable radio-frequency/microwave signal-processing devices, such as filters, resonators, phase-shifters, are widely used in modern communication systems. With the advent of novel applications related to 5G, new technologies are being developed so that devices can be tuned broadly across multiple frequency channels. Conventionally, magnetic fields are used for tuning such devices. However, they are bulky, slow, and consume lot of power. Thus, there is a critical need for performance improvement of such frequency tunable devices. This NSF project is aimed to develop and test electrically tunable film based high frequency devices that can be rapidly tuned in limited power budget. Objectives of this project are to develop magnetoelectrics multiferroics (ME MFs) composite films based electrically tunable high-frequency devices with large figure of merit (=tunability/insertion-losses) and power-efficiency. Such composite films consists of magnetic and ferroelectric materials and can be tuned electrically and magnetically due to ME coupling. The intellectual merit of the project primarily includes: (i) gaining comprehensive understanding on role of distribution and ratio of magnetic and ferroelectric phases in the composite films to achieve large ME coupling as well as (ii) fabricating and testing ME film based resonators and filters at higher frequencies. The project will bring transformative change as electric voltages are readily available on circuits and the proposed devices are expected to exhibit large figure of merit and allow easy integration with the existing semiconductor technology. Anticipated impacts of this project include training of diverse groups of students in the field of engineering and testing of voltage tunable devices in collaboration with the Oakland University. Minority graduate students will be recruited for this research project. Underrepresented undergraduate students will gain research experience in PI’s lab through McNair Scholar Program. Summer opportunities will be provided to local high-school teachers to learn and develop educational demo kits for high school students based on tunable devices. The overarching objective of this project is to engineer magnetoelectric multiferroic nanocomposite and heterostructured films for developing electrically tunable high-frequency coplanar waveguide resonators and filters with high figure of merit. This project work includes: (i) fabrication of ferroelectric and magnetostrictive composite and heterostructured films with various distribution and ratio of the two phases, (ii) measurement and analysis of the ferroelectric properties and leakage currents, (iii) ME coupling measurements, and (iv) fabrication as well as testing of resonators and filters based on optimized films with high figure of merit. This work will contribute significantly by providing great opportunities for developing power-efficient, compact, high-frequency multi-band voltage tunable devices over 2-12 GHz with large figure of merit that can be integrated with the existing semiconductor technology. The fundamental understanding gained through this project can be expanded to other high-frequency devices, such as phase shifters, oscillators, memory devices, magnetic sensors, and antennas. The educational goal of the project is to train and prepare future generation of engineers in modern multifunctional device technology. The outreach activities will provide training, knowledge, and research exposure to a diverse group of students and high school teachers in this interdisciplinary research area.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

可调式射频/微波信号处理设备（例如过滤器，谐振器，相移）被广泛用于现代通信系统中。随着与5G相关的新型应用的推进，正在开发新技术，以便可以在多个频率通道之间对设备进行广泛调整。通常，磁场用于调整此类设备。但是，它们笨重，缓慢且消耗了很多力量。这是对此类频率可调设备的性能提高的迫切需求。该NSF项目旨在开发和测试基于电动膜的高频设备，这些设备可以在有限的电力预算中迅速调整。该项目的目的是开发基于电子可调的高频设备的磁性多形膜（ME MFS），具有较大的功绩（=可调性/插入性损失）和功率效率。这种复合膜由磁性和铁电材料组成，并且由于我的耦合，可以在电气和磁性上调整。该项目的智力优点主要包括：（i）对复合膜中磁性和铁电相的分布和比率的作用进行全面了解，以实现大ME耦合以及（ii）在较高频率下制造和测试基于膜的谐振器和过滤器。该项目将带来变革性的变化，因为电压很容易在电路上获得，并且预计所提出的设备将显示出很大的功绩，并可以轻松地与现有的半导体技术集成。该项目的预期影响包括与奥克兰大学合作，培训工程领域的潜水员群体和电压可调设备的测试。少数族裔研究生将被招募到该研究项目。代表性不足的本科生将通过McNair Scholar计划在PI实验室获得研究经验。夏季机会将向当地高中老师提供，以根据可调设备为高中生学习和开发教育演示套件。该项目的总体目的是设计磁性多用量纳米复合材料和异质结构膜，用于开发具有高功绩的电气高频共光引导谐振器和过滤器。该项目的工作包括：（i）在两个阶段的各种分布和比例的铁电和磁复合膜和异质结构膜的制造中，（ii）测量和分析铁电特性和泄漏电流，（iii）ME耦合测量值，以及（IV）制造以及基于储存器的档案和最高效果的测试。这项工作将通过为2-12 GHz的强大，紧凑，高频的多波段可调设备提供巨大的机会，从而为2-12 GHz提供巨大的功能，并具有很大的功绩，并可以与现有的半导体技术集成在一起，从而为这项工作做出了巨大贡献。通过该项目获得的基本理解可以扩展到其他高频设备，例如相移，振荡器，内存设备，磁性传感器和天线。该项目的教育目标是培训和准备现代多功能设备技术的工程师。外展活动将在这个跨学科研究领域的潜水员和高中教师群体提供培训，知识和研究曝光。该奖项反映了NSF的法定任务，并通过使用基金会的知识分子和更广泛的影响审查标准来通过评估来评估，被认为是宝贵的支持。