Room temperature high-power terahertz semiconductor laser with high-quality beam shape and stable spectral emission
具有高质量光束形状和稳定光谱发射的室温高功率太赫兹半导体激光器
基本信息
- 批准号:2149908
- 负责人:
- 金额:$ 45万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2022
- 资助国家:美国
- 起止时间:2022-05-15 至 2025-04-30
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
This project seeks to develop compact and high power THz sources in order to close an important gap in technology between microwave and optical devices. This is a transition area between electronics and optics as well as a transition area between classical mechanics and quantum physics. The specific location of THz waves in the electromagnetic spectrum also gives them a plethora of unique properties. For an example, THz waves can pass through a variety of substances, including synthetics, textiles, paper, and cardboard. Also, many biomolecules, proteins, explosives or narcotics feature characteristic absorption signatures at the frequencies between 1 and 5 THz. Therefore, two major applications of THz radiation are imaging, sensing and spectroscopy. Besides, unlike X-rays, THz waves do not have any ionizing effects and are generally considered biologically innocuous. This makes THz waves much safer and healthier than X-rays when used for security checks and medical diagnosis. In addition, as the THz frequency is orders of magnitude higher than tht used for traditional wireless internet, there is the potential to apply THz technology for the next-generation of high-speed wireless communications. Unfortunately, current commercial sources of THz radiation are either extremely large or require cryogenic cooling, neither of which are desirable traits for widespread use. By integrating quantum device engineering, nonlinear optics, optical phased arrays, and photonic integrated circuit technology, it may now be possible to realize a compact, mass-producible, and room temperature THz source with high output power in continuous operation. This source will represent an enabling technology for all of the applications mentioned above.The proposed THz frequency source is based on difference frequency generation (DFG) in a dual-wavelength quantum cascade laser (QCL) that has been configured as an optical phased array (OPA) for coherent, high power operation. The utility of the OPA is to both manage waste heat and provide near diffraction limited beam quality for THz emission. With proper heat management and packaging, this will be the first room chip-based semiconductor laser with 1 mW CW THz output power at room temperature. This type of THz source inherits all of the advantages of the mid-infrared QCLs, such as room temperature operation, electrical pumping, compact size, stable emission, and the potential for mass production. This multidisciplinary project is a combination of both theory and experiment covering diverse fields, including semiconductor physics, material science, quantum mechanics, optoelectronics, nonlinear optics, thermal management, and micro/nanotechnology. In additional to the practical use of the technology that will be developed, project details also make an excellent case study for integrated device development, which will be explored as part of the Solid State Engineering curriculum at Northwestern University.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
该项目旨在开发紧凑型高功率太赫兹源,以缩小微波和光学设备之间的重要技术差距。这是电子学和光学之间的过渡领域,也是经典力学和量子物理之间的过渡领域。太赫兹波在电磁波谱中的特定位置也赋予了它们许多独特的特性。例如,太赫兹波可以穿过多种物质,包括合成材料、纺织品、纸张和纸板。此外,许多生物分子、蛋白质、炸药或麻醉剂在 1 至 5 THz 频率处具有特征吸收特征。因此,太赫兹辐射的两个主要应用是成像、传感和光谱学。此外,与 X 射线不同,太赫兹波不具有任何电离效应,通常被认为对生物无害。这使得太赫兹波在用于安全检查和医疗诊断时比 X 射线更安全、更健康。此外,由于太赫兹频率比传统无线互联网使用的频率高出几个数量级,因此太赫兹技术有潜力应用于下一代高速无线通信。不幸的是,目前的商业太赫兹辐射源要么非常大,要么需要低温冷却,这两者都不是广泛使用的理想特性。通过集成量子器件工程、非线性光学、光学相控阵和光子集成电路技术,现在有可能实现紧凑、可批量生产、室温、连续运行、高输出功率的太赫兹源。 该源将代表上述所有应用的启用技术。所提出的太赫兹频率源基于双波长量子级联激光器(QCL)中的差频生成(DFG),该激光器已配置为光学相控阵( OPA)用于相干、高功率操作。 OPA 的用途是管理废热并为太赫兹发射提供接近衍射极限的光束质量。 通过适当的热管理和封装,这将是第一个在室温下具有 1 mW CW THz 输出功率的基于室内芯片的半导体激光器。 这种类型的太赫兹源继承了中红外QCL的所有优点,例如室温操作、电泵浦、尺寸紧凑、发射稳定和大规模生产的潜力。这个多学科项目是理论与实验的结合,涵盖半导体物理、材料科学、量子力学、光电子学、非线性光学、热管理和微/纳米技术等多个领域。除了将要开发的技术的实际应用之外,项目细节还为集成设备开发提供了出色的案例研究,这将作为西北大学固态工程课程的一部分进行探索。该奖项反映了 NSF 的法定使命和通过使用基金会的智力优点和更广泛的影响审查标准进行评估,该项目被认为值得支持。
项目成果
期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
High power, room temperature, terahertz sources and frequency comb based on difference-frequency generation at CQD
基于 CQD 差频生成的高功率、室温、太赫兹源和频率梳
- DOI:10.1117/12.2635322
- 发表时间:2022-09
- 期刊:
- 影响因子:0
- 作者:Razeghi; Manijeh
- 通讯作者:Manijeh
Ultrafast Pulse Generation from Quantum Cascade Lasers
量子级联激光器产生超快脉冲
- DOI:10.3390/mi13122063
- 发表时间:2022-11-24
- 期刊:
- 影响因子:3.4
- 作者:Wang, Feihu;Qi, Xiaoqiong;Chen, Zhichao;Razeghi, Manijeh;Dhillon, Sukhdeep
- 通讯作者:Dhillon, Sukhdeep
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Manijeh Razeghi其他文献
Combined resonant tunneling and rate equation modeling of terahertz quantum cascade lasers
太赫兹量子级联激光器的谐振隧道和速率方程组合建模
- DOI:
10.1063/5.0198059 - 发表时间:
2024-03-18 - 期刊:
- 影响因子:3.2
- 作者:
Zhichao Chen;Andong Liu;Dong Chang;S. Dhillon;Manijeh Razeghi;Feihu Wang - 通讯作者:
Feihu Wang
MOCVD-grown Ga2O3 thin films for polarization-sensitive infrared photonics
用于偏振敏感红外光子学的 MOCVD 生长 Ga2O3 薄膜
- DOI:
10.1063/5.0177705 - 发表时间:
2024-01-01 - 期刊:
- 影响因子:6.1
- 作者:
S. A. Dereshgi;Junhee Lee;D. Ceneda;M. Larciprete;M. Centini;Manijeh Razeghi;Koray Aydin - 通讯作者:
Koray Aydin
Comparison of PLD-grown p-NiO/n-Ga2O3 heterojunctions on bulk single crystal β-Ga2O3 and r-plane sapphire substrates
在块状单晶 β-Ga2O3 和 r 面蓝宝石衬底上 PLD 生长的 p-NiO/n-Ga2O3 异质结的比较
- DOI:
10.1117/12.3012511 - 发表时间:
2024-03-18 - 期刊:
- 影响因子:0
- 作者:
David J. Rogers;V. Sandana;F. Teherani;Manijeh Razeghi - 通讯作者:
Manijeh Razeghi
Development of high power, InP-based quantum cascade lasers on alternative epitaxial platforms
在替代外延平台上开发高功率 InP 基量子级联激光器
- DOI:
10.1117/12.3009335 - 发表时间:
2024-03-08 - 期刊:
- 影响因子:0
- 作者:
S. Slivken;N. Shrestha;Manijeh Razeghi - 通讯作者:
Manijeh Razeghi
Temperature dependence of the quantized Hall effect.
量子霍尔效应的温度依赖性。
- DOI:
10.1103/physrevb.32.7016 - 发表时间:
1985-11-15 - 期刊:
- 影响因子:0
- 作者:
H. Wei;Albert M. Chang;D. C. Tsui;Manijeh Razeghi - 通讯作者:
Manijeh Razeghi
Manijeh Razeghi的其他文献
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{{ truncateString('Manijeh Razeghi', 18)}}的其他基金
EAGER: MOCVD Growth of beta-(Al,In,Ga)2O3 for Transistor Applications
EAGER:用于晶体管应用的 β-(Al,In,Ga)2O3 的 MOCVD 生长
- 批准号:
1748339 - 财政年份:2017
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Diffraction-grating coupled surface emitting Terahertz quantum cascade laser source for high power, room temperature continuous wave operation
用于高功率、室温连续波操作的衍射光栅耦合表面发射太赫兹量子级联激光源
- 批准号:
1607838 - 财政年份:2016
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Terahertz source frequency comb based on difference frequency generation from a mid-IR quantum cascade laser
基于中红外量子级联激光器差频生成的太赫兹源频率梳
- 批准号:
1505409 - 财政年份:2015
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Tunable Continuous Wave THz Source Based on a Room Temperature Quantum Cascade Laser
基于室温量子级联激光器的可调谐连续波太赫兹源
- 批准号:
1306397 - 财政年份:2013
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
Request for Conference support for the 11th international conference on Infrared Optoelectronics: Materials and Devices (MIOMD-XI),to be Held September,4-8,2012 in Evanston, IL.
请求为将于 2012 年 9 月 4 日至 8 日在伊利诺伊州埃文斯顿举行的第 11 届红外光电子学国际会议:材料与器件 (MIOMD-XI) 提供会议支持。
- 批准号:
1225083 - 财政年份:2012
- 资助金额:
$ 45万 - 项目类别:
Standard Grant
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