LEAPS-MPS: Nanopatterning Nitride Based Nanostructures Using Sequential Infiltration Synthesis for Optoelectronic Applications

LEAPS-MPS：利用连续渗透合成技术对氮化物基纳米结构进行纳米图案化，用于光电应用

• 批准号: 2213365
• 负责人: Mahua Biswas
• 金额: $ 17.93万
• 依托单位: Board of Trustees of Illinois State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2022
• 资助国家: 美国
• 起止时间: 2022-08-01 至 2024-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2213365&HistoricalAwards=false
• 关键词: LEAPS; MPS; Nanopatterning; Nitride; Based

This award is funded in whole or in part under the American Rescue Plan Act of 2021 (Public Law 117-2). Non-Technical Summary:Optoelectronic devices, including photodetectors, solar cells, and light-emitting diodes (LEDs), are essentially energy conversion devices which converts light to electricity or vice versa. These devices are used in many aspects of modern life such as telecommunication, energy, consumer electronics, and solid-state lighting. Most commonly the active material in optoelectronic devices are Gallium Nitride (GaN) or Aluminum Nitride (AlN). These materials have attracted significant attention and are of great interest because of their emission in ultraviolet (UV) and visible wavelengths. Nanostructures of nitride materials are not as common as planar structures which are currently used in commercial devices, but they could enable future devices with novel functionalities. With this award from the LEAPS-MPS program researchers at Illinois State University develop nanopatterns of AlN and GaN by using a synthesis approach called Sequential Infiltration Synthesis (SIS). SIS allows them to investigate the growth mechanism of the nitride materials as well as optical properties of nanostructures with different shapes morphologies. In addition to this research being of great interest to the semiconductor industry, the project also enhances the undergraduate education at a primarily undergraduate institution because students can participate in cutting-edge experimental research, which provides hands-on synthesis and characterization opportunities. This effort also broadens the semiconductor workforce by integrating research results into the physics curriculum as part of an upper-level experimental physics courses. The recipient of this award, an early career female faculty member is a role model for female and minority students, encouraging them to choose STEM careers. Technical Summary:In the field of optoelectronic research, group III nitrides such as AlN and GaN have gained significant attention over last few decades due to their stabilities and as a wide band gap semiconductor with emission in the ultraviolet and visible ranges. The planar structured nitride materials currently used in commercial devices come with limitations such as defects and dislocations due to lattice mismatch with available substrates which consequently limit the performance of the resulting devices, high temperature requirements limiting choice of substrates and the dimensions are not suitable for futuristic nanoscale devices. For emerging devices, the concerns related to planar structures can be alleviated by employing nanostructures of these materials. However, fabrication methods of nanostructured nitride materials are still in infancy and current approaches are complex and multi-step processes. Significant improvements and a fundamental understanding are needed regarding the growth of nitride nanostructures and subsequent long-range patterning of these nanostructures. With this award from the LEAPS-MPS program the researchers synthesize AlN and GaN nanorod patterns using nanostructured block copolymer (BCP) templates and an inorganic deposition method called Sequential Infiltration Synthesis (SIS). The SIS process involves infiltration of gas phase molecules into soft polymeric materials. This project investigates the SIS growth mechanism for nitride materials using Fourier Transform Infrared Spectroscopy (FTIR) as well as other physical, structural and optical characterization techniques. These and other methods, including scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), X-ray diffraction (XRD), photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy, and cathodoluminescence (CL) imaging, are used to study the resulting nanostructures. The proposed work opens up new avenues of research to realize nitride nanomaterial growth and patterning using SIS as a facile and cost-effective method.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该奖项是根据2021年《美国救援计划法》（公法117-2）全部或部分资助的。非技术摘要：光电设备，包括光电探测器，太阳能电池和发光二极管（LED），本质上是能量转换设备，可将光转换为电力，反之亦然。这些设备用于现代生活的许多方面，例如电信，能源，消费电子产品和固态照明。最常见的是光电设备中的活性材料是氮化炮（GAN）或硝酸铝（ALN）。这些材料引起了极大的关注，并且由于它们在紫外线（UV）和可见波长中的发射而引起了极大的关注。氮化物材料的纳米结构不像目前在商业设备中使用的平面结构那样常见，但是它们可以使未来具有新功能的设备。伊利诺伊州立大学（Illinois State University）的LEAP-MPS计划研究人员的奖项通过使用称为顺序浸润合成（SIS）的合成方法来开发Aln和GAN的纳米模式。 SIS允许他们研究氮化物材料的生长机理以及具有不同形状形态的纳米结构的光学特性。除了这项研究对半导体行业非常感兴趣之外，该项目还增强了主要是本科机构的本科教育，因为学生可以参与尖端的实验研究，该研究提供动手的综合和表征机会。这项工作还通过将研究结果整合到物理​​课程中，作为高级实验物理课程的一部分，可以扩大半导体劳动力。该奖项的获得者是早期的职业女教师是女性和少数民族学生的榜样，鼓励她们选择STEM职业。技术摘要：在光电研究领域，由于其稳定性，ALN和GAN等III组的氮化物在过去几十年中引起了人们的关注，并且作为宽带间隙半导体，在紫外线和可见范围内散发出宽带间隙半导体。当前在商业设备中使用的平面结构氮化物材料具有限制，例如由于晶格不匹配与可用底物而引起的缺陷和位错，因此限制了所得设备的性能，底物的高温需求限制和尺寸不适合未来主义纳米级设备。对于新兴设备，可以通过采用这些材料的纳米结构来缓解与平面结构有关的问题。然而，纳米结构氮化物材料的制造方法仍处于起步阶段，并且当前的方法是复杂且多步骤的过程。对于氮化纳米结构的生长以及随后的这些纳米结构的长期图案，需要进行重大改进和基本理解。通过LEAPS-MPS计划的奖项，研究人员使用纳米结构块共聚物（BCP）模板和一种称为顺序浸润合成（SIS）的无机沉积方法合成ALN和GAN纳米棒模式。 SIS过程涉及将气相分子浸润到软聚合物材料中。该项目使用傅立叶变换红外光谱（FTIR）以及其他物理，结构和光学表征技术研究了氮化物材料的SIS生长机制。这些方法和其他方法，包括扫描电子显微镜（SEM），能量分散X射线光谱（EDX），X射线衍射（XRD），光致发光（PL）和光致发光激发（PLE）光谱镜（PLE）光谱（PLE）光谱（PLE）光谱（CL）成像，用于研究结果NanAnostrusters。拟议的工作开辟了新的研究途径，以使用SIS作为一种易于且具有成本效益的方法来实现硝酸盐纳米材料的生长，并将其模式化。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子优点和更广泛的影响来评估的，以评估值得进行评估。