CNS Core: Small: Ensuring Privacy by Runtime Analog Sanitization of Solid State Storage Devices

CNS 核心：小型：通过固态存储设备的运行时模拟清理确保隐私

基本信息

批准号：
2007403
负责人：
Biswajit Ray
金额：
$ 49.69万
依托单位：
University of Alabama in Huntsville
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2020
资助国家：
美国
起止时间：
2020-10-01 至 2023-11-30
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=2007403&HistoricalAwards=false
关键词：
CNS Core Small Ensuring Privacy

项目摘要

Non-volatile flash memories, the basic building blocks of solid-state storage devices, offer small form factors, high-capacity, high-speed, and low-power permanent storage solutions in a wide range of computing systems found in consumer electronics, automotive, military, industrial, healthcare, and enterprise segments. Unfortunately, deleting data instantly from physical flash memories is not always straightforward as it incurs hefty overheads and increases wear level, especially in solid-state drives (SSDs). According to a recent report, 42% of used SSDs sold on eBay held sensitive recoverable data, even though data deletion or sanitization methods were in place. Whereas standard data deletion methods make the data inaccessible to the user through standard interfaces, our recent research efforts demonstrate that the deleted data is partially or fully recoverable by means of physical characterization of flash memory cells. This underscores the need for finding new ways to ensure that deleted data is promptly, permanently, and irreversibly re-moved from flash memories. This project is investigating new cost-effective instant data sanitization techniques for flash memories. The proposed techniques take advantage of (a) timeline of recent flash operations; (b) physical properties of flash memory cells cap-tured by state decay models and (c) partial flash program and erase operations. These techniques will be tailored to uti-lize the unique properties and architectures of flash-memory chips found in commercial storage applications. The proposed techniques will be applicable to different types of flash memories, will require no or minimal changes in hardware, and will not increase the wear level of flash memories nor significantly increase the latency of common flash operations. Techniques for cost-effective data sanitization of flash memories in run-time will benefit consumers, industry, and government alike by ensuring that deleted data is not recoverable at any time during the product’s life cycle. These techniques will be deployed in the firmware of flash memory controllers. A direct outcome of this proposal will be the training of three graduate students in the important area of hardware-oriented security and memory systems. The investigators are developing teaching materials to introduce hardware-oriented security topics in embedded systems, computer systems architecture, and hardware reliability courses.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非挥发性闪光记忆，固态存储设备的基本构建块，提供了小的形式，高容量，高速和低功率的永久存储解决方案，在消费电子，汽车，军事，工业，工业，医疗保健和企业段中广泛的计算系统中。不幸的是，从物理闪光记忆中立即删除数据并不总是很简单，因为它增加了大量的开销并增加了磨损水平，尤其是在固态驱动器（SSD）中。根据最近的一份报告，即使已经采用了数据删除或消毒方法，在eBay上出售的二手SSD中有42％。尽管标准数据删除方法通过标准接口使用户无法访问数据，但我们最近的研究工作表明，通过闪存闪存单元的物理表征，已删除的数据部分或完全可恢复。这突显了寻找新方法的需求，以确保从闪光记忆中及时，永久和不可逆转地重新删除数据。该项目正在研究闪光记忆的新的成本效益的即时数据消毒技术。提出的技术利用了（a）最近的Flash操作时间表；（b）由状态衰减模型和（c）部分闪存程序和擦除操作的闪存闪存电池的物理特性。这些技术将量身定制，以利用商业存储应用程序中发现的闪存记忆芯片的独特属性和架构。所提出的技术将适用于不同类型的闪光记忆，不需要硬件的最小变化，并且不会增加闪光记忆的磨损水平，也不会显着增加常见闪光操作的延迟。通过确保在产品生命周期期间的任何时间删除的数据无法恢复，用于运行时闪光记忆的具有成本效益的数据消毒技术将使消费者，行业和政府受益。这些技术将部署在闪存控制器的固件中。该提案的直接结果将是在重要的面向硬件安全和内存系统重要领域对三名研究生进行培训。研究人员正在开发教材，以在嵌入式系统，计算机系统体系结构和硬件可靠性课程中引入面向硬件的安全主题。该奖项反映了NSF的法定任务，并被认为是通过基金会的智力优点和更广泛影响的评估标准来评估的珍贵支持。

项目成果

期刊论文数量（6）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Hide-and-Seek: Hiding Secrets in Threshold Voltage Distributions of NAND Flash Memory Cells

捉迷藏：隐藏 NAND 闪存单元阈值电压分布的秘密

DOI：
10.1145/3599691.3603415
发表时间：
2023
期刊：
Proceedings of the 15th ACM Workshop on Hot Topics in Storage and File Systems
影响因子：
0
作者：
Raquibuzzaman, Md;Milenkovic, Aleksandar;Ray, Biswajit
通讯作者：
Ray, Biswajit

Intrablock Wear Leveling to Counter Layer-to-Layer Endurance Variation of 3-D NAND Flash Memory