Rubbing-Induced Site-Selective Patterning for Two-Dimensional Dichalcogenide Devices

二维二硫属化物器件的摩擦诱导位点选择性图案化

• 批准号: 2001036
• 负责人: Xiaogan Liang
• 金额: $ 40.59万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-07-01 至 2024-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2001036&HistoricalAwards=false
• 关键词: Rubbing; Induced; Site; Selective; Patterning

This grant supports research that advances critical knowledge for manufacturing electronic devices based on emerging nanomaterials, helping advance U.S. industrial competitiveness and national prosperity. Two-dimensional nanomaterials, such as transition metal dichalcogenides, could be exploited to make a broad range of electronic and photonic devices with superior functionalities. For example, dichalcogenides such as molybdenum disulfide, can be used to make flexible and wearable devices, biosensors for rapid illness diagnosis, and energy-efficient photodetectors. Although prototypes of these dichalcogenide devices have been demonstrated in the laboratory, the device community still lacks suitable technologies for realizing scalable nanomanufacturing of such devices. One of the most critical challenges is the vulnerability of dichalcogenides to the existing lithography and etching processes for manufacturing electronic devices. This award supports fundamental research to explore imperative knowledge supporting a new manufacturing technology involving site-selective patterning that enables reliable production of dichalcogenide device structures without involving processes that are detrimental to dichalcogenides. The high-quality dichalcogenide device structures produced by this technology are highly desirable for device applications in electronic, sensor, energy storage, and optoelectronic industries. This research enhances participation of underrepresented groups in the education activities related to advanced manufacturing. The new manufacturing technology, termed rubbing-induced site-selective (RISS) patterning, involves a controllable rubbing process for generating nano- or microscale triboelectric charge patterns on a substrate and a subsequent two-dimensional nanomaterial chemical vapor deposition process. The triboelectric charge patterns modulate the nucleation of material deposition precursors on the target substrate and enables direct formation of dichalcogenide device patterns at designated site-selective locations without the need for additional resist-based lithography and plasma etching, which can introduce irreversible contamination and damage to the dichalcogenide layered structure. However, scientific questions need to be answered to make RISS technology practical for manufacturing commercially viable dichalcogenide devices. This research is to understand the mechanisms related to the generation and control of triboelectric charge patterns as well as material deposition processes modulated by electric fields. The research team plans to establish a theoretical-experimental integrated methodology for designing rubbing templates, which can generate high-contrast triboelectric charge patterns under designated mechanical conditions. The research approach is to fabricate rationally designed rubbing templates using focused ion beam and atomic force microscope lithography techniques, experimentally identify mechanical conditions that generate high-contrast triboelectric charge patterns, perform modeling of material diffusion guided by triboelectric field and demonstrate production of arrays of dichalcogenide-based memristive devices for neuromorphic computing.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这项赠款支持研究，该研究为基于新兴纳米材料制造电子设备的批判知识提高了知识，从而帮助提高了美国的工业竞争力和国家繁荣。可以利用二维纳米材料（例如过渡金属二核苷），以制造具有卓越功能性的广泛的电子和光子设备。例如，可用于制造灵活且可穿戴的设备，生物传感器以快速疾病诊断和节能光电探测器。尽管在实验室中已经证明了这些二甲基元化设备的原型，但设备社区仍然缺乏适合实现此类设备可扩展纳米制造的技术。最关键的挑战之一是二分法生成剂对制造电子设备的现有光刻和蚀刻过程的脆弱性。该奖项支持基础研究，以探索势在必行的知识，以支持新的制造技术，该技术涉及现场选择性图案，该技术可以可靠地生产DiChalcogenide设备结构，而无需涉及对二甲基化剂的过程。该技术生产的高质量的二分法器械结构非常需要电子，传感器，能源存储和光电业的设备应用。这项研究增强了代表性不足的群体参与与高级制造有关的教育活动。 新的制造技术称为摩擦引起的现场选择性（RISS）图案，涉及可控的摩擦过程，用于在基板上生成纳米或显微镜摩擦式摩擦式电荷模式，以及随后的二维纳米材料化学液体蒸气沉积过程。摩擦电荷电荷模式调节材料沉积前体在目标底物上的成核，并可以在指定的现场选择位置直接形成二甲藻元化设备模式，而无需基于额外的抗抗性光刻和等离子体蚀刻，这可以引入不可逆的污染和损害二甲级生生基结构。但是，需要回答科学问题，以使RISS技术实用，以制造商业可行的二分法设备。这项研究是为了了解与电场调节的底层电荷电荷模式以及材料沉积过程有关的机制。研究小组计划建立一种理论实验综合方法来设计摩擦模板，该方法可以在指定的机械条件下产生高对比度的摩擦电荷模式。研究方法是使用聚焦的离子束和原子力显微镜光刻技术制造合理设计的摩擦模板，在实验上确定了产生高对比度的摩擦电荷模式的机械条件，执行由摩擦式培训的材料扩散指导的材料扩散引导的模型，并证明了基于Dichalcogenide nefors.Memristies Neuristies Neuristry nefors.memristies nefors.memristive dection.法定任务，并被认为是值得通过基金会的智力优点和更广泛影响的审查标准来评估的值得支持的。

项目成果

Multiplexing implementation of rubbing-induced site-selective growth of MoS 2 feature arrays

MoS 2 特征阵列摩擦诱导位点选择性生长的多重实现

• DOI: 10.1116/6.0001268
• 发表时间: 2021
• 期刊: Journal of Vacuum Science & Technology B
• 影响因子: 1.4
• 作者: Chen, Mingze;Ki, Seung;Liang, Xiaogan
• 通讯作者: Liang, Xiaogan

Fabrication of microstructures on curved hydrogel substrates

• DOI: 10.1116/6.0002071
• 发表时间: 2022-09
• 期刊: Journal of Vacuum Science & Technology B
• 作者: M. Chen;X. Ding;L. Que;X. Liang

Optoelectronic performance characterization of MoS 2 photodetectors for low frequency sensing applications

用于低频传感应用的 MoS 2 光电探测器的光电性能表征

• DOI: 10.1116/6.0001280
• 发表时间: 2021
• 期刊: Journal of Vacuum Science & Technology B
• 影响因子: 1.4
• 作者: Ki, Seungjun;Chen, Mingze;Liang, Xiaogan
• 通讯作者: Liang, Xiaogan