Topological Straintronic Devices

拓扑应变电子器件

• 批准号: 1936406
• 负责人: Shixiong Zhang
• 金额: $ 36.69万
• 依托单位: Indiana University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-09-15 至 2023-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1936406&HistoricalAwards=false
• 关键词: Topological; Straintronic; Devices

Nontechnical:Semiconductor technologies have fueled the explosive growth of information-age technologies over the last half century. Further advances, however, are becoming increasingly difficult as devices dimensions approach atomic scales. This challenge requires new approaches that harness quantum phenomena. Novel electronic devices that exploit quantum properties have the potential for better device reliability and lower power consumption. Quantum technologies bring their own challenges. In particular, environmental effects can corrupt quantum information and significant resources are required for error correction. Topological materials offer great potential to address this problem because of their unique properties. In particular, quantum states are topologically protected by symmetries and are less subject to corruption. In this project elastic strain rather than electric or magnetic fields will be used to control electronic states in devices. Logic gates and other electronic devices are expected to be more reliable and use less power than conventional devices based on complementary metal oxide semiconductors. Interactive and engaging educational outreach programs will be integrated with the research project. These include Science Blog writing and Materials and Device Exhibits. These outreach efforts will promote scientific literacy to the general public and improve science appreciation by local K-12 students. This in turn will attract such students to modern science and technology in the early stages of their education. Finally, the participation of underrepresented groups in scientific research will be enhanced.Technical:This collaborative research project concerns novel strain-electronic (or straintronic) nanowire devices built upon two classes of topological materials, topological crystalline insulators (TCIs) and Weyl semimetals (WSMs), which host massless Dirac fermions on their surfaces and Weyl fermions with definite chirality in their bulk, respectively. These extraordinary surface or bulk states are topologically protected by symmetries and are rather robust against impurities, defects and disorder. Electronic devices exploiting these quantum/topological states are likely to have significantly improved reliability and/or reduced power consumption relative to conventional semiconductor-based electronics. The overall objective of this project is to study and manipulate the exotic quantum properties of Dirac and Weyl fermions in topological devices utilizing controllable elastic strain towards low-power, highly reliable electronic applications. In contrast to previous studies of bulk crystals and thin films, the proposed research will focus on nanowire/nanoribbon-based devices that harbor exceptional features for straintronic studies and applications. The success of the project will be built on the two PIs' existing collaboration, extensive familiarity with topological materials, and complementary expertise on material synthesis, device fabrication, magneto-transport studies, and theoretical modeling of electronic systems. The combined theoretical and experimental studies of strain-driven topological phase transitions and associated quantum transport properties will offer new paradigms for fundamental, potentially exploitable physics in electronic systems. The proposed research is also anticipated to represent a key step in establishing a new research area, topological straintronics: the manipulation of topological quasi-particles with controllable elastic strain.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术性：半导体技术在过去半个世纪中推动了信息时代技术的爆炸性增长。然而，随着设备尺寸接​​近原子量表，进一步的进步变得越来越困难。这个挑战需要利用量子现象的新方法。利用量子性能的新型电子设备具有更好的设备可靠性和降低功耗。量子技术带来自己的挑战。特别是，环境效应会破坏量子信息，并且需要大量资源进行错误纠正。由于其独特的特性，拓扑材料为解决这个问题提供了巨大的潜力。特别是，量子状态在拓扑上受到对称性的保护，并且不受腐败的影响。在此项目中，弹性应变而不是电场或磁场将用于控制设备中的电子状态。与基于互补的金属氧化物半导体相比，逻辑门和其他电子设备的可靠性更为可靠，并且使用较少的功率。互动和引人入胜的教育外展计划将与研究项目集成。其中包括科学博客写作以及材料和设备展览。这些宣传工作将促进对公众的科学素养，并提高本地K-12学生的科学欣赏。反过来，这将在教育的早期阶段吸引这些学生进入现代科学和技术。最后，将增强代表性小组参与科学研究的参与。技术研究项目涉及新颖的应变电子（或劳累）纳米线设备建立在两类拓扑材料，拓扑结晶绝缘子（TCIS）和无质量的福音的福音式福利范围内的拓扑晶体绝缘子（TCIS）和无质量的福音式构建的拓扑材料（TCIS）和无质量的福音，这些纳米线的纳米线构建的纳米线构建。分别散装。这些非凡的表面或散装状态在拓扑上受到对称性的保护，并且对杂质，缺陷和混乱非常有力。利用这些量子/拓扑状态的电子设备相对于常规的半导体电子设备，可能具有显着提高的可靠性和/或降低功耗。该项目的总体目的是研究和操纵拓扑设备中狄拉克和Weyl fermions的外来量子性能，利用可控的弹性应变来实现低功率，高度可靠的电子应用。与先前对散装晶体和薄膜的研究相反，拟议的研究将集中在纳米线/纳米孔基的设备上，这些设备具有劳累研究和应用的杰出特征。该项目的成功将建立在两个PI的现有合作，对拓扑材料的广泛熟悉程度以及有关材料合成，设备制造，磁通量研究和电子系统理论建模的互补专业知识。 应变驱动拓扑相变和相关量子传输特性的理论和实验研究将为电子系统中的基本，潜在可利用的物理学提供新的范式。预计拟议的研究还可以代表建立一个新的研究领域的关键步骤：拓扑劳累基质学：具有可控弹性应变的拓扑准粒子的操纵。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子和更广泛影响的审查标准来通过评估来通过评估来获得支持的。

项目成果

Remarkable suppression of lattice thermal conductivity by electron-phonon scattering in iridium dioxide nanowires

• DOI: 10.1016/j.mtphys.2021.100517
• 发表时间: 2021-11
• 期刊: Materials Today Physics
• 影响因子: 11.5
• 作者: Y. Tao;Z. Pan;T. Ruch;X. Zhan;Y. Chen;S.X. Zhang;D. Li

Broken symmetry and competing orders in Weyl semimetal interfaces

• DOI: 10.1103/physrevb.107.l041402
• 发表时间: 2022-05
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Ritajit Kundu;H. Fertig;A. Kundu

Extreme Air Sensitivity and Nonself-Limited Oxidation of Two-Dimensional Magnetic Tellurides

• DOI: 10.1021/acsmaterialslett.3c00395
• 发表时间: 2023-06
• 期刊: ACS Materials Letters
• 影响因子: 11.4
• 作者: Amanda L. Coughlin;Jun-Jie Zhang;Sammy Bourji;B. Wei;Gaihua Ye;Zhipeng Ye;Jeonghoon Hong;T. Zhang;Magda Andrade;Xun Zhan;R. He;Jian Wang;B. Yakobson;Y. Losovyj;C. Chu;L. Deng;Shixiong Zhang

Helical Edge States and Quantum Phase Transitions in Tetralayer Graphene

• DOI: 10.1103/physrevlett.125.036803
• 发表时间: 2020-07-13
• 期刊: PHYSICAL REVIEW LETTERS
• 影响因子: 8.6
• 作者: Che, Shi;Shi, Yanmeng;Fertig, Herbert A.
• 通讯作者: Fertig, Herbert A.

Quantum geometric exciton drift velocity

• DOI: 10.1103/physrevb.103.115422
• 发表时间: 2021-03-15
• 期刊: PHYSICAL REVIEW B
• 影响因子: 3.7
• 作者: Cao, Jinlyu;Fertig, H. A.;Brey, Luis
• 通讯作者: Brey, Luis