SHF: Small: Ferroelectric Transistor based Coupled Oscillators for Non-Boolean Computing

SHF：小型：用于非布尔计算的基于铁电晶体管的耦合振荡器

• 批准号: 1814756
• 负责人: Sumeet Gupta
• 金额: $ 45万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-01-01 至 2021-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1814756&HistoricalAwards=false
• 关键词: SHF; Small; Ferroelectric; Transistor; based

Since conventional computing architectures based on Boolean processing of inputs may be sub-optimal for tasks involving recognition and sensory processing, exploration of new non-Boolean computing technologies has the potential to assume an important role. This project aims at addressing this issue by investigating new post-CMOS devices and circuits, and extensively analyzing their implications at the application level. The research outcomes are likely to have a direct impact on critical applications such as computer aided diagnosis, speech/face recognition, data classification and resource allocation, and benefit several areas such as healthcare, defense, and security. Moreover, power savings achieved with the proposed techniques may translate to longer battery life for mobile systems facilitating a richer user experience and ultra-low power processing. The project will enhance graduate and undergraduate education by integrating the research outputs in the curriculum. The participation of under-represented groups will also be encouraged.The proposed research utilizes the emerging technology of ferroelectric transistor to design novel low power and compact oscillators by translating the inherent non-linearity of the ferroelectrics to sustained oscillations. A multitude of such oscillators, whose dynamics can be controlled, are coupled to realize a non-Boolean computing fabric. The extent of synchronization amongst the oscillators provides information about the degree of match/mismatch amongst different signals, enabling efficient decision-making for applications such as pattern matching, motion sensing and others. The proposed approach involves extensive co-design of devices and circuits to harness the unique features offered by the ferroelectric transistors for enhancing the energy- and area-efficiencies of the coupled oscillators. The research effort spans different levels of design abstraction including (i) the exploration of novel ferroelectric based devices amenable for the proposed approach, (ii) new oscillator designs, and (iii) a comprehensive application-level analysis. Extensive benchmarking of ferroelectric based oscillators will be performed against previously explored oscillators to comprehensively quantify their benefits and trade-offs. In addition, detailed investigation establishing the relationships between the device-circuit characteristics and the inherent properties of the ferroelectric materials will be carried out to uncover the fundamental attributes of the proposed oscillators and their rich oscillation dynamics.

由于基于布尔的输入处理的常规计算体系结构对于涉及识别和感官处理的任务可能是最佳的，因此对新的非树脂计算技术的探索有可能扮演重要作用。该项目旨在通过研究新的CMOS设备和电路来解决此问题，并广泛分析其在应用程序级别的含义。研究结果可能会直接影响关键应用，例如计算机辅助诊断，语音/面部识别，数据分类和资源分配，并使医疗保健，国防和安全等多个领域受益。此外，通过提出的技术可节省的动力可能会转化为移动系统的较长电池寿命，以促进更丰富的用户体验和超低功率处理。该项目将通过将研究成果整合到课程中来增强研究生和本科教育。还将鼓励代表性不足的群体的参与。拟议的研究利用铁电晶体管的新兴技术通过将铁电机的固有非线性转换为持续振荡的新型低功率和紧凑型振荡器。可以控制动力学的许多此类振荡器，以实现非树状计算织物的耦合。振荡器之间同步的程度提供了有关不同信号之间匹配/不匹配程度的信息，从而为诸如模式匹配，运动传感等应用程序提供有效的决策。提出的方法涉及广泛的设备和电路共同设计，以利用铁电晶体管提供的独特特征，以增强耦合振荡器的能量和面积效应。 研究工作涵盖了不同级别的设计抽象，包括（i）探索可用于提议的方法，（ii）新振荡器设计的新型基于铁电的设备，以及（iii）全面的应用级分析。将对先前探索的振荡器进行广泛的基于铁电振荡器的基准测试，以全面量化其福利和权衡。此外，将进行详细的研究，以确定设备电路特性与铁电材料的固有特性之间的关系，以发现所提出的振荡器的基本属性及其丰富的振动动力学。

项目成果

Modeling and Comparative Analysis of Hysteretic Ferroelectric and Anti-ferroelectric FETs

磁滞铁电和反铁电 FET 的建模和比较分析

• DOI: 10.1109/drc.2018.8442136
• 发表时间: 2018
• 期刊: Device Research Conference
• 作者: Saha, Atanu K.;Gupta, Sumeet K.
• 通讯作者: Gupta, Sumeet K.

Oscillators Utilizing Ferroelectric-Based Transistors and Their Coupled Dynamics

利用铁电晶体管的振荡器及其耦合动力学

• DOI: 10.1109/ted.2019.2902107
• 发表时间: 2019
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: Thakuria, Niharika;Saha, Atanu K.;Thirumala, Sandeep K.;Jung, Byunghoo;Gupta, Sumeet K.
• 通讯作者: Gupta, Sumeet K.

Ferroelectric Thickness Dependent Domain Interactions in FEFETs for Memory and Logic: A Phase-field Model based Analysis

用于存储器和逻辑的 FEFET 中铁电厚度相关的域相互作用：基于相场模型的分析

• DOI: 10.1109/iedm13553.2020.9372099
• 发表时间: 2020
• 期刊: International Electron Device Meetings (IEDM
• 作者: Saha, A. K.;Si, M.;Ni, K.;Datta, S.;Ye, P. D.;Gupta, S. K.
• 通讯作者: Gupta, S. K.

Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO

• DOI: 10.1063/1.5092707
• 发表时间: 2019-01
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: A. Saha;K. Ni;S. Dutta;S. Datta;S. Gupta

Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor/Metal Stacks: A Phase-field Simulation Based Study

• DOI: 10.1038/s41598-020-66313-1
• 发表时间: 2019-11
• 期刊: Scientific Reports
• 影响因子: 4.6
• 作者: A. Saha;S. Gupta