Development of tunnel field effect optoelectronic devices based on stacked 2D crystals with clean interfaces

基于具有干净界面的堆叠二维晶体的隧道场效应光电器件的开发

• 批准号: 1810453
• 负责人: Ming Liu
• 金额: $ 37.39万
• 依托单位: University of California-Riverside
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-09-01 至 2024-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1810453&HistoricalAwards=false
• 关键词: Development; tunnel; field; effect; optoelectronic; Development; tunnel; field; effect; optoelectronic

Nontechnical:Optical communication is based on converting electrical signals into optical signals by optoelectronic devices such as lasers and photodiodes. Devices based on conventional semiconductors such as silicon are reaching the ultimate limits for performance. New materials and structures are required to advance the state of the art. The discovery of graphene, a two-dimensional (2D) layer of carbon, shows how new electronic properties emerge when a bulk material is thinned down to a single layer. Other 2D materials include boron nitride, black phosphorous, and transition metal dichalcogenides. Different 2D materials can be assembled one layer at a time into vertically stacked thin films. Such heterostructures can achieve functions and performance not possible with a single material. The interface between different 2D materials is critical to maintaining the unique properties that make them attractive for device applications. The principal investigator will use a newly developed clean-transfer method to prepare 2D heterostructure materials with clean interfaces. A custom-built scanning probe microscope with nanometer-scale light sources at the tip will be used to study the optical and electronic properties of devices with unprecedented resolution. Results from this project will enrich the understanding of these materials and accelerate the development of nanoscale optoelectronics. This interdisciplinary project will integrate research into education of graduate and undergraduate students in material science, engineering, and nanomanufacturing. This project will also seek to broaden participation in science, technology, engineering and mathematics.Technical:This proposal will combine novel 2D-heterostructure material preparation techniques, near-field scanning optics microscopy and near-field scanning photocurrent microscopy to investigate the fundamental optoelectronic properties and photocarrier behaviors in van der Waals material-based heterostructures. The photocurrent imaging with high spatial resolution, below 10nm, can reveal rich physics in nanoscale features. These include local pn-junctions, domain boundaries, edges, dopants, and strains. Imaging such features can significantly improve the understanding and enhance the control of the electronic and photonic properties of this new material system. The objectives of this project are to: (1) demonstrate a prototype tapping-mode near-field scanning photocurrent microscopy to investigate heterostructure devices, (2) improve the spatial resolution of scanning photocurrent imaging technique to sub-10nm level, and (3) study the photoresponsivity of vertically-stacked heterostructures based on graphene, boron nitrides, transmission metal dichalcogenides such as WSe2, MoS2, and MoSe2, and (4) develop fundamental understanding of the roles of nanoscale features, such as edge terminations and interlayer defect formation on the optoelectronic properties.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术：光通信基于将电信号转换为光电设备（例如激光器和光电二极管）的光学信号。基于常规半导体（例如硅）的设备达到了性能的最终限制。需要新的材料和结构来推进最新技术。石墨烯（二维（2D）碳的发现）显示，当将散装物质变细到单层时，新的电子特性如何出现。其他2D材料包括硝酸硼，黑磷和过渡金属二核苷。可以将不同的2D材料一次组装成垂直堆叠的薄膜。这样的异质结构可以通过单个材料实现功能和性能。不同2D材料之间的接口对于维护使它们对设备应用程序有吸引力的独特属性至关重要。首席研究人员将使用新开发的清洁转移方法来准备具有干净界面的2D异质结构材料。尖端的定制扫描探针显微镜将使用纳米尺度的光源来研究具有前所未有的分辨率的设备的光学和电子性能。 该项目的结果将丰富对这些材料的理解，并加速纳米级光电学的发展。这个跨学科项目将整合材料科学，工程和纳米制造业研究生和本科生的教育研究。 This project will also seek to broaden participation in science, technology, engineering and mathematics.Technical:This proposal will combine novel 2D-heterostructure material preparation techniques, near-field scanning optics microscopy and near-field scanning photocurrent microscopy to investigate the fundamental optoelectronic properties and photocarrier behaviors in van der Waals material-based heterostructures.具有高空间分辨率（低于10nm）的光电流成像可以揭示纳米级特征的丰富物理。这些包括局部PN界面，域边界，边缘，掺杂剂和菌株。成像这种特征可以显着提高对该新材料系统的电子和光子性能的理解和控制。该项目的目标是：（1）演示一种原型敲击模式近场扫描光电流显微镜研究异质结构设备，（2）改善扫描光电流成像技术的空间分辨率到子10Nm水平，以及（3）研究基于垂直堆积的heterostructions的光接种率的heterenene net烯，boror nm诸如WSE2，MOS2和MOSE2之类的二分法以及（4）对纳米级特征的作用进行了基本了解，例如边缘终止和层间缺陷形成在光电属性上。这项奖项反映了NSF的法定任务，反映了通过使用基金会和广泛的Intfactial and Intfactial and Intfactial and Intfactial和BroadIrial and Intif and Intivial和BroadIriatial和BroadIrit和BroadIrit and Intif。