Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides

了解和控制高迁移率钙钛矿氧化物中的缺陷、无序和电子传输

• 批准号: 1741801
• 负责人: Bharat Jalan
• 金额: $ 47.55万
• 依托单位: University of Minnesota-Twin Cities
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-08-15 至 2022-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1741801&HistoricalAwards=false
• 关键词: Understanding; Controlling; Defects; Disorder; Electronic

NON-TECHNICAL DESCRIPTION: This project focuses on the synthesis of a new class of oxide materials using an advanced state-of-the-art thin film deposition technique. These materials possess high conductivity and a wide bandgap - so light can pass through easily, making it optically transparent. These properties are of great interest for next generation electronic devices such as high-power electronics, transparent displays, touchscreens and solar cells. The research activities contribute to the professional development experience for students from local high schools, minority organizations and community colleges through education, training and hands-on workshops. TECHNICAL DETAILS: Through a combination of experimental and computational techniques, the project is investigating fundamental factors, at the atomic level of detail, that influence the defect formation and electronic properties in strain-engineered alkaline-earth stannate (Sr1-xBaxSnO3) thin films. In particular, the project is seeking to understand, and control defects specifically dislocations, local structure, and electronic mobility in these materials with an ultimate goal to create a new class of high-mobility semiconducting materials with wide bandgap for room-temperature applications. The project is also exploiting synthesis methods for atomic level control of point defects and structural defects in complex oxides. The project is providing opportunities for graduate, undergraduate and high school students to obtain training on cutting-edge thin film deposition approaches, advanced characterization techniques, and theoretical calculations.

非技术描述：该项目侧重于使用先进的最先进的薄膜沉积技术合成新型氧化物材料。这些材料具有高导电性和宽带隙，因此光可以轻松通过，从而使其具有光学透明性。这些特性对于高功率电子设备、透明显示器、触摸屏和太阳能电池等下一代电子设备非常重要。研究活动通过教育、培训和实践研讨会，为当地高中、少数群体组织和社区学院的学生提供专业发展经验。技术细节：通过实验和计算技术的结合，该项目正在原子细节水平上研究影响应变工程碱土锡酸盐（Sr1-xBaxSnO3）薄膜中的缺陷形成和电子特性的基本因素。特别是，该项目正在寻求了解和控制这些材料中的缺陷，特别是位错、局域结构和电子迁移率，最终目标是创造一种适合室温应用的新型高迁移率半导体材料，具有宽带隙。该项目还开发了复杂氧化物中点缺陷和结构缺陷的原子级控制的合成方法。该项目为研究生、本科生和高中生提供获得尖端薄膜沉积方法、先进表征技术和理论计算培训的机会。

项目成果

Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3

SrSnO3 电子迁移率限制机制的实验与理论联合研究

• DOI: 10.1038/s42005-021-00742-w
• 发表时间: 2021-11
• 期刊: Communications Physics
• 影响因子: 5.5
• 作者: Truttmann, Tristan K.;Zhou, Jin;Lu, I;Rajapitamahuni, Anil Kumar;Liu, Fengdeng;Mates, Thomas E.;Bernardi, Marco;Jalan, Bharat
• 通讯作者: Jalan, Bharat

Hybrid molecular beam epitaxy of germanium-based oxides

锗基氧化物的混合分子束外延

• DOI: 10.1038/s43246-022-00290-y
• 发表时间: 2022-12
• 期刊: Communications Materials
• 影响因子: 7.8
• 作者: Liu, Fengdeng;Truttmann, Tristan K.;Lee, Dooyong;Matthews, Bethany E.;Laraib, Iflah;Janotti, Anderson;Spurgeon, Steven R.;Chambers, Scott A.;Jalan, Bharat
• 通讯作者: Jalan, Bharat

SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation

SrSnO™ 金属半导体场效应晶体管，工作频率 GHz

• DOI: 10.1109/led.2020.3040417
• 发表时间: 2021-01
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: Wen, Jiaxuan;Chaganti, V. R.;Truttmann, Tristan K.;Liu, Fengdeng;Jalan, Bharat;Koester, Steven J.
• 通讯作者: Koester, Steven J.

Self-Assembled Periodic Nanostructures Using Martensitic Phase Transformations

利用马氏体相变自组装周期性纳米结构

• DOI: 10.1021/acs.nanolett.0c03708
• 发表时间: 2021-02
• 期刊: Nano Letters
• 影响因子: 10.8
• 作者: Prakash, Abhinav;Wang, Tianqi;Bucsek, Ashley;Truttmann, Tristan K.;Fali, Alireza;Cotrufo, Michele;Yun, Hwanhui;Kim, Jong;Ryan, Philip J.;Mkhoyan, K. Andre;et al
• 通讯作者: et al

Separating Electrons and Donors in BaSnO 3 via Band Engineering

通过能带工程分离 BaSnO 3 中的电子和供体

• DOI: 10.1021/acs.nanolett.9b03825
• 发表时间: 2019-10
• 期刊: Nano Letters
• 影响因子: 10.8
• 作者: Prakash, Abhinav;Quackenbush, Nicholas F.;Yun, Hwanhui;Held, Jacob;Wang, Tianqi;Truttmann, Tristan;Ablett, James M.;Weiland, Conan;Lee, Tien;Woicik, Joseph C.;et al
• 通讯作者: et al