Van der Waals Heteromaterials

范德华异质材料

• 批准号: 1701390
• 负责人: Matthias Batzill
• 金额: $ 43.47万
• 依托单位: University of South Florida
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2022-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1701390&HistoricalAwards=false
• 关键词: Van; der; Waals; Heteromaterials

Nontechnical Description: Layered materials consists of two-dimensional molecular-planes that are stacked on top of each other and held together by only weak forces. Although the interactions between layers are weak, it has been recently shown that they are critical in controlling the properties of these materials. In nature, layered compounds exhibit identical layer composition. In this project, the research team is combining diverse layered materials with atomic layer precision and thus creates artificially layered materials with novel properties. Specifically, the team is gaining insight how interfaces between dissimilar layered materials controls material properties and this has far reaching implications for designing materials at the nanoscale. Better understanding of interlayer interactions enables discovery of novel materials with applications as diverse as superconductivity or solar energy harvesting. The program advocates the increase of minority students in STEM research and is embedded in activities which allows graduate students to gain experience internationally at research facilities in Europe. Technical Description: Quantum confinement and interlayer hybridization in van der Waals materials strongly modify the properties of single layers compared to bulk materials. The research team aims to understand how such weak interlayer interactions modify the properties of artificial van der Waals heterostructures and explores how these modifications can be utilized for designing materials with desirable properties. In this project, van der Waals heterostructures are synthesized by direct growth of layered materials on van der Waals substrates. The variation of their electronic properties due to interlayer interactions are characterized by angle resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy. Scanning probe techniques also allow the characterization of artificially grown nanostructures and lateral interfaces. Quantum critical phenomena, such as charge density wave transitions, are anticipated to be sensitively dependent on interlayer interactions and thus the tuning of transition temperatures is being studied in metallic materials. Band gap tuning as a function of layers and/or interfaces with dissimilar materials are being studied in semiconducting materials. Finally, modifications of single layer electronic properties by molecular adsorption, charge transfer doping, or field effect is explored by combining the capabilities of growing single layers with a new nanoprobe transport measurement under ultra-high vacuum conditions.

非技术描述：层状材料由二维分子平面组成，这些分子平面彼此堆叠并仅通过弱力结合在一起。尽管层之间的相互作用很弱，但最近的研究表明它们对于控制这些材料的性能至关重要。实际上，层状化合物表现出相同的层组成。在这个项目中，研究团队将不同的层状材料与原子层精度相结合，从而创造出具有新颖特性的人工层状材料。具体来说，该团队正在深入了解不同层状材料之间的界面如何控制材料特性，这对纳米尺度材料的设计具有深远的影响。更好地理解层间相互作用可以发现具有超导或太阳能收集等多种应用的新型材料。该计划倡导增加少数族裔学生参与 STEM 研究，并融入到让研究生在欧洲研究机构获得国际经验的活动中。技术描述：与块状材料相比，范德华材料中的量子限制和层间杂化极大地改变了单层的性能。研究小组旨在了解这种弱的层间相互作用如何改变人造范德华异质结构的性能，并探索如何利用这些修改来设计具有所需性能的材料。在该项目中，通过在范德华基底上直接生长层状材料来合成范德华异质结构。由于层间相互作用而导致的电子特性的变化可以通过角分辨光电子能谱和扫描隧道显微镜/光谱来表征。扫描探针技术还可以表征人工生长的纳米结构和横向界面。量子临界现象，例如电荷密度波跃迁，预计将敏感地依赖于层间相互作用，因此正在研究金属材料中转变温度的调节。半导体材料中正在研究带隙调节作为不同材料的层和/或界面的函数。最后，通过将单层生长的能力与超高真空条件下的新型纳米探针输运测量相结合，探索了通过分子吸附、电荷转移掺杂或场效应来改变单层电子特性。

项目成果

Controlling the Charge Density Wave Transition in Monolayer TiSe 2 : Substrate and Doping Effects

控制单层 TiSe 2 中的电荷密度波跃迁：衬底和掺杂效应

• DOI: 10.1002/qute.201800070
• 发表时间: 2018-10
• 期刊: Advanced Quantum Technologies
• 影响因子: 4.4
• 作者: Kolekar, Sadhu;Bonilla, Manuel;Diaz, Horacio Coy;Hashimoto, Makato;Lu, Donghui;Batzill, Matthias
• 通讯作者: Batzill, Matthias

Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates

范德华基底上的 VSe2 单分子层具有强室温铁磁性

• DOI: 10.1038/s41565-018-0063-9
• 发表时间: 2018-02-19
• 期刊: Nature Nanotechnology
• 影响因子: 38.3
• 作者: M. Bonilla;S. Kolekar;Yujing Ma;Horacio Coy Diaz;V. Kalappattil;R. Das;T. Eggers;H. Gutiérrez
• 通讯作者: H. Gutiérrez

Molecular Beam Epitaxy of Transition Metal (Ti-, V-, and Cr-) Tellurides: From Monolayer Ditellurides to Multilayer Self-Intercalation Compounds

过渡金属（Ti-、V-和Cr-）碲化物的分子束外延：从单层二碲化物到多层自插层化合物

• DOI: 10.1021/acsnano.0c02712
• 发表时间: 2020-07
• 期刊: ACS Nano
• 影响因子: 17.1
• 作者: Lasek, Kinga;Coelho, Paula Mariel;Zberecki, Krzysztof;Xin, Yan;Kolekar, Sadhu K.;Li, Jingfeng;Batzill, Matthias
• 通讯作者: Batzill, Matthias

Mirror twin grain boundaries in molybdenum dichalcogenides

二硫属化钼中的镜像孪晶晶界

• DOI: 10.1088/1361-648x/aae9cf
• 发表时间: 2018-12
• 期刊: Journal of Physics: Condensed Matter
• 作者: Batzill; Matthias
• 通讯作者: Matthias

A magnetic sensor using a 2D van der Waals ferromagnetic material

使用 2D 范德华铁磁材料的磁传感器

• DOI: 10.1038/s41598-020-61798-2
• 发表时间: 2020-03-16
• 期刊: Scientific Reports
• 影响因子: 4.6
• 作者: V. O. Jimenez;V. Kalappattil;T. Eggers;M. Bonilla;S. Kolekar;P. T. Huy;M. Batzill;M. Phan
• 通讯作者: M. Phan