GOALI: Infrared Nanowire Heterostructures: Fundamentals and Emerging Detector Applications

GOALI：红外纳米线异质结构：基础知识和新兴探测器应用

• 批准号: 1509706
• 负责人: Leigh Smith
• 金额: $ 40万
• 依托单位: University of Cincinnati Main Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-07-01 至 2019-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1509706&HistoricalAwards=false
• 关键词: GOALI; Infrared; Nanowire; Heterostructures; Fundamentals

Infrared Nanowire Heterostructures: Fundamentals and Emerging Detector ApplicationsNontechnical Abstract:This work is funded under the area of Grant Opportunties for Academic Liaison with Industry (GOALI). This project is to investigate the application of a class of infrared active semiconductor nanowire heterostructures for creation of unique infrared imaging detectors with enhanced sensitivity. This project is a collaboration between the basic science and engineering faculty and students at the University of Cincinnati and Australian National University with the research staff at L-3/Cincinnati Electronics which specializes in the design and manufacture of infrared detectors. These nanostructures may provide the basis for unique infrared detectors and infrared imaging systems spanning a wide wavelength range from 1.5 microns to 10 microns. The overarching goal of this research is to develop and understand new nanowire based materials which will allow broad tunability and high sensitivity over the mid-wave IR and thus provide a foundation to fabricate unique IR detectors and arrays. This proposal is strongly enhanced by an active collaboration among L3/Cincinnati Electronics, with experience in effective design, characterization and manufacture of complex infrared imaging systems, the world-class nanowire growth group at Australian National University, and the device and optical Physics group at the University of Cincinnati. Students and faculty at the academic institutions will be exposed to the dynamics and complexities involved in applied research at a corporate research facility, while the staff at L-3/Cincinnati Electronics will be exposed to the basic science and technological research at an academic institution. Technical Abstract:This project is to investigate the basic physics of a newly grown class of semiconductor nanowire heterostructures and their emerging applications as unique infrared detectors spanning the range from 1.5 microns to 10 microns. Such nanostructures have the potential to substantially enhance the capabilities of infrared focal plane arrays for imaging since the quasi one-dimensional geometry opens up new ways to tune the wavefunctions and the band gaps in these materials. This proposal is strongly enhanced by an active collaboration between L3/Cincinnati Electronics, with experience in effective design and manufacture of complex infrared imaging systems, the world-class nanowire growth group at Australian National University, and the research group at UC which has substantial experience in the imaging and spectroscopy of single semiconductor nanowires. The research described in this proposal is made compelling by two new developments: (1) the newly developed capability to grow III-Sb and InAs nanowires and nanowire heterostructures of very high quality, and (2) the very recent confirmation in our laboratories that it is possible to make single nanowire dynamical measurements of photoexcited carrier recombinations and relaxation with very high sensitivity out into the infrared. The specific goals of this research are to measure the band structure and dynamics in Zincblende GaAsSb, InAsSb and InGaAs ternary alloy heterostructures. This ability to tune the band structure to design new nanostructures will enable the design of new extremely sensitive detectors in the infrared. These nanostructures will be combined so as to make sensitive 1D and 2D IR detector arrays. Students and faculty at the academic institutions will be exposed to the dynamics and complexities involved in applied research at a corporate research facility, while the staff at L-3/Cincinnati Electronics will be exposed to the basic science and technological research at an academic institution.

红外纳米线异质结构：基础知识和新兴探测器应用非技术摘要：这项工作得到了学术与工业联络资助机会 (GOALI) 领域的资助。 该项目旨在研究一类红外活性半导体纳米线异质结构的应用，以创建具有增强灵敏度的独特红外成像探测器。 该项目是辛辛那提大学和澳大利亚国立大学的基础科学和工程教师和学生与专门从事红外探测器设计和制造的 L-3/辛辛那提电子公司研究人员的合作项目。 这些纳米结构可以为独特的红外探测器和红外成像系统提供基础，其波长范围从 1.5 微米到 10 微米。 这项研究的首要目标是开发和了解新型纳米线材料，该材料将在中波红外范围内实现广泛的可调性和高灵敏度，从而为制造独特的红外探测器和阵列奠定基础。 L3/辛辛那提电子公司（在复杂红外成像系统的有效设计、表征和制造方面拥有丰富的经验）、澳大利亚国立大学世界一流的纳米线生长小组以及澳大利亚国立大学的器件和光学物理小组之间的积极合作有力地加强了该提案。辛辛那提大学。 学术机构的学生和教师将在企业研究机构中接触应用研究的动态和复杂性，而 L-3/辛辛那提电子公司的员工将在学术机构中接触基础科学和技术研究。 技术摘要：该项目旨在研究一类新生长的半导体纳米线异质结构的基础物理及其作为跨度从 1.5 微米到 10 微米范围的独特红外探测器的新兴应用。这种纳米结构有可能大幅增强红外焦平面阵列的成像能力，因为准一维几何形状开辟了调整这些材料中的波函数和带隙的新方法。 L3/辛辛那提电子公司（在复杂红外成像系统的有效设计和制造方面拥有丰富的经验）、澳大利亚国立大学世界一流的纳米线生长小组以及拥有丰富经验的加州大学研究小组之间的积极合作有力地增强了该提案单个半导体纳米线的成像和光谱学。本提案中描述的研究因两项新进展而引人注目：(1) 新开发的生长非常高质量的 III-Sb 和 InAs 纳米线和纳米线异质结构的能力，以及 (2) 我们实验室最近证实，可以以非常高的灵敏度对红外光激发载流子复合和弛豫进行单纳米线动态测量。本研究的具体目标是测量闪锌矿 GaAsSb、InAsSb 和 InGaAs 三元合金异质结构的能带结构和动力学。 这种调整能带结构以设计新纳米结构的能力将使新的极其灵敏的红外探测器的设计成为可能。 这些纳米结构将被组合起来，以制造灵敏的一维和二维红外探测器阵列。 学术机构的学生和教师将在企业研究机构中接触应用研究的动态和复杂性，而 L-3/辛辛那提电子公司的员工将在学术机构中接触基础科学和技术研究。