EFRI 2-DARE: Monolayer Heterostructures: Epitaxy to Beyond-CMOS Devices
EFRI 2-DARE:单层异质结构:外延到超越 CMOS 器件
基本信息
- 批准号:1433490
- 负责人:
- 金额:$ 200万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2014
- 资助国家:美国
- 起止时间:2014-11-01 至 2018-10-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Title: EFRI 2-DARE: monolayer heterostructures: epitaxy to beyond-CMOS devices Non-Technical: Discovering new materials and learning how to harvest their properties are among the most important activities for advancing our society. Over the past six decades, the advent of semiconductors in particular, has dramatically changed the ways in which we compute, communicate and learn. Still, we long for opto- and electronics that are even more energy-efficient, compact, flexible and convenient. New materials drive novel applications, and innovative devices demand creative materials research. This bidirectional thinking is epitomized in this EFRI 2-DARE project. The material system of choice is 2-dimensional (2D) layered materials. Vigorous investigations in the research laboratories will result in high quality student training, enrich our knowledge to improve teaching in the classroom, and lead to innovations that drive the progress of society. The leadership embodied in the research, teaching, mentoring, service, outreach activities in this project in turn better prepares the next generation of the STEM work force.Technical: The rapid and recent advances in graphene, a single sheet of carbon atoms arranged in a two-dimensional (2D) honeycomb crystal, have raised tantalizing questions for other examples of 2D materials that might have distinct and useful properties. "The rich variety of properties that 2D layer materials offer can potentially be engineered on demand, and they create exciting prospects for applications such as in electronics, sensing, photonics, flexible electronics, energy harvesting and storage, thermal management, mechanical structures, catalysis, and bio-engineering in the future," (NSF EFRI-2014 program solicitation). In this proposal, the aim is to educate the next generation of scientists and engineers to address the grand challenges in energy, where an interdisciplinary team with complimentary expertise will use an integrated approach for research and outreach. Based on the rapid progress made by the PIs in the 2D layered materials and heterostructure growth by molecular beam epitaxy, this EFRI team proposes transformative approaches to control electronic doping and heterostructure formation with monolayer precision. Based on the resulting materials, the team will also explore theoretically and experimentally the following three device themes. 1) Beyond CMOS switches: searching for correlated effects. This represents a fundamental departure from the conventional electronic switch mechanism. If successful, not only will the basic science in correlated electron systems be advanced, but this will also lead to more energy efficient switches, which addresses an urgent national need and grand challenge. 2) Gated RF oscillators: exploring charge density waves. This also represents a fundamental departure from the conventional RF sources. Gated charge density waves promises a tunable RF source over an extremely wide bandwidth in the terahertz frequency region, which is a critical element in closing the THz technology gap. 3) Gated thermoelectric batteries: investigating thermoelectric properties of 2D crystals. The TMD materials have a unique combination of low thermal conductivity and high electrical conductivity. Their 2D nature also provides an ideal platform to investigate 2D thermoelectric effects.
标题:EFRI 2 DARE:单层异质结构:超越CMOS设备的外观非技术:发现新材料并学习如何收获其特性是推进我们社会的最重要活动之一。 在过去的六十年中,尤其是半导体的出现,已经大大改变了我们计算,交流和学习的方式。 尽管如此,我们渴望获得更节能,紧凑,灵活和方便的光学和电子产品。 新材料推动了新颖的应用,创新设备需要创意材料研究。 这个双向思维在这个EFRI 2 Dare项目中表现出来。 选择的材料系统是二维(2D)分层材料。 研究实验室的大力研究将导致高质量的学生培训,丰富我们的知识以改善课堂的教学,并带来推动社会进步的创新。 在研究,教学,指导,服务,外展活动中体现的领导者反过来为下一代STEM劳动力做好了准备。技术技术:石墨烯的快速而最新的进步,石墨烯的快速发展,一张碳原子在二维(2D)蜂蜜Brystal中排列的单一碳原子,为其他有用的属性提出了诱人的诱人问题,并可能与2D材料进行了不同的质疑,并具有不同的属性。 “ 2D层材料提供的各种属性可能会按需进行设计,它们为电子产品,传感,光子学,灵活的电子,能量收集和存储,热管理,机械结构,催化和生物工程的应用程序创造了令人兴奋的前景,未来的应用程序。在该提案中,目的是教育下一代科学家和工程师,以应对能源的巨大挑战,在这种挑战中,具有免费专业知识的跨学科团队将使用综合方法进行研究和宣传。基于PIS在2D层次材料中的快速进步和分子束外延的异质结构生长,该EFRI团队提出了以单层精度来控制电子掺杂和异质结构形成的变换方法。根据所得材料,团队还将在理论和实验上探索以下三个设备主题。 1)超越CMOS开关:寻找相关效果。这代表了与常规电子开关机制的基本不同。 如果成功的话,不仅相关电子系统的基础科学将被提高,而且还将导致更节能的开关,这解决了紧急的国家需求和巨大的挑战。 2)封闭式RF振荡器:探索电荷密度波。 这也代表了与常规RF来源的根本性。门控电荷密度波在Terahertz频率区域中有可能在极宽的带宽上进行可调的RF源,这是缩小THZ技术差距的关键元素。 3)封闭的热电电池:研究2D晶体的热电特性。 TMD材料具有低导热率和高电导率的独特组合。他们的2D性质还提供了研究2D热电效应的理想平台。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Huili Grace Xing其他文献
高品質AlNテンプレートの歪制御と電子デバイス応用
高质量 AlN 模板的应变控制和电子设备应用
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
林侑介;藤平哲也;Yongjin Cho;Huili Grace Xing;Debdeep Jena;三宅秀人;酒井朗 - 通讯作者:
酒井朗
Huili Grace Xing的其他文献
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{{ truncateString('Huili Grace Xing', 18)}}的其他基金
KAUST-NSF Research Conference on Interactive Electronics; King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia
KAUST-NSF 交互式电子学研究会议;
- 批准号:
1713747 - 财政年份:2017
- 资助金额:
$ 200万 - 项目类别:
Standard Grant
E2CDA: TYPE 1: Durable, Energy-Efficient, Pausable Processing in Polymorphic Memories (DEEP3M)
E2CDA:类型 1:多态存储器中的耐用、节能、可暂停处理 (DEEP3M)
- 批准号:
1740286 - 财政年份:2017
- 资助金额:
$ 200万 - 项目类别:
Continuing Grant
NSF EFRI-2DARE Grantees Meeting 2016
2016 年 NSF EFRI-2DARE 受资助者会议
- 批准号:
1721198 - 财政年份:2017
- 资助金额:
$ 200万 - 项目类别:
Standard Grant
MRI: Development of an Apertureless Near-Field Scanning Optical and Magneto-Optical Kerr Effect Microscope for Nano-Science Applications
MRI:开发用于纳米科学应用的无孔径近场扫描光学和磁光克尔效应显微镜
- 批准号:
1631282 - 财政年份:2015
- 资助金额:
$ 200万 - 项目类别:
Standard Grant
CAREER: Graphene and Graphene Nanoribbon Optoelectronic Properties and Devices
职业:石墨烯和石墨烯纳米带光电特性和器件
- 批准号:
1530723 - 财政年份:2014
- 资助金额:
$ 200万 - 项目类别:
Standard Grant
MRI: Development of an Apertureless Near-Field Scanning Optical and Magneto-Optical Kerr Effect Microscope for Nano-Science Applications
MRI:开发用于纳米科学应用的无孔径近场扫描光学和磁光克尔效应显微镜
- 批准号:
1338010 - 财政年份:2013
- 资助金额:
$ 200万 - 项目类别:
Standard Grant
CAREER: Graphene and Graphene Nanoribbon Optoelectronic Properties and Devices
职业:石墨烯和石墨烯纳米带光电特性和器件
- 批准号:
0846910 - 财政年份:2009
- 资助金额:
$ 200万 - 项目类别:
Standard Grant
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