EFRI 2-DARE Proposal: Spin-Valley Coupling for Photonic and Spintronic Devices

EFRI 2-DARE 提案:光子和自旋电子器件的自旋谷耦合

基本信息

  • 批准号:
    1433496
  • 负责人:
  • 金额:
    $ 150万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2014
  • 资助国家:
    美国
  • 起止时间:
    2014-08-15 至 2018-07-31
  • 项目状态:
    已结题

项目摘要

Non-Technical: The performance and capabilities of key present solid-state technologies, such as light-emitting diodes, solar cells, and other electro-optic components, are ultimately constrained by the fundamental properties of conventional semiconductors such as silicon and gallium arsenide. Monolayers of the layered transition-metal dichalcogenides (with formula MX2, such as MoS2 and WSe2) have recently been discovered to be a new class of semiconductors effectively at the atomically thin limit. They have dramatically different fundamental properties which can defy previous constraints, allowing observation and discovery of new physical phenomena and offering potential for unprecendented solid-state device possibilities. Fundamentally new properties in MX2 include the relationship between electron spin, the "valley index" specifying which of two equivalent momentum states the electron occupies in the 2D lattice, and the "layer index" specifying which layer the electron is in when two monolayers form a bilayer. The spin, valley and layer quantum numbers in this material are linked and can be manipulated jointly, as has already been demonstrated theoretically and experimentally by the investigators. The proposed work aims to study all aspects of this "spin-valley-layer coupling", ranging from its role in electrical transport to its interplay with optical cavities, with a view to novel yet practical device technologies with electrical, magnetic, and optical control. The work will be done by a mixed team of physics and engineers and will provide interdisciplinary research education to a large number of graduate and undergraduate students.Technical: In monolayer MX2 the strong spin-orbit coupling locks the real spin at the band edges to the valley index to produce spin-valley coupling. At the same time the valleys, and hence spins, are addressable using circularly polarized optical selection rules. Additionally, in bilayers and heterostructures the valley index is further coupled to the layer index for a given valley index, leading to new magnetoelectric effects. MX2s thus provide the first solid-state system in which electric and dynamical control of combined valley pseudospin and real spin are possible, opening up a wealth of hybrid spin and valley device possibilities. The focus of the proposed work is on the studying the unique spin, valley and layer pseudospin couplings in MX2 monolayers, bilayers and heterostructures with photonic and spintronic device applications in mind. The specific goals and methods are as follows: (1) develop microscopic theories for coupled spin-valley-charge transport to guide and model the experimental efforts and synthesis of monolayers, bilayers, heterostructures, and hybrid systems; (2) develop highest quality, large-area crystal growth with controllable charged and magnetic dopants; (3) combine electrical and optical investigation of intrinsic spin and valley properties to determine the fundamental parameters of monolayers and bilayers in various device geometries for hybrid spin-valleytronics; (4) investigate and demonstrate manipulation of spin and valley polarizations in heterostructures and hybrid photonic devices combining MX2s with structures such as photonic-crystal cavities, addressing aspects including spin-valley-charge transport across interfaces, interlayer exciton physics, exciton-polaritons in integrated cavity structures, and strong photon-valley exciton interactions within a nanocavity; and (5) develop MX2 lateral junction devices for efficient, controllable, and spin and valley specific light emitters, modulators and detectors.
非技术性:现有关键固态技术(例如发光二极管、太阳能电池和其他电光元件)的性能和能力最终受到传统半导体(例如硅和砷化镓)的基本特性的限制。最近发现,单层层状过渡金属二硫属化物(分子式为 MX2,例如 MoS2 和 WSe2)是一种有效达到原子薄极限的新型半导体。它们具有显着不同的基本特性,可以突破以前的限制,允许观察和发现新的物理现象,并为前所未有的固态器件提供可能性。 MX2 中的根本性新属性包括电子自旋之间的关系、指定电子在 2D 晶格中占据两个等效动量状态中的哪一个的“谷指数”,以及指定当两个单层形成一个电子层时电子位于哪一层的“层指数”。双层。正如研究人员在理论和实验上已经证明的那样,这种材料中的自旋、谷和层量子数是相互关联的并且可以共同操纵。拟议的工作旨在研究这种“自旋谷层耦合”的各个方面,从其在电传输中的作用到其与光腔的相互作用,以期获得具有电、磁和光控制的新颖而实用的器件技术。这项工作将由物理学和工程师组成的混合团队完成,并将为大量研究生和本科生提供跨学科研究教育。技术:在单层 MX2 中,强自旋轨道耦合将能带边缘的真实自旋锁定到谷指数产生自旋谷耦合。同时,可以使用圆偏振光学选择规则来寻址谷和自旋。此外,在双层和异质结构中,对于给定的谷指数,谷指数进一步耦合到层指数,从而产生新的磁电效应。因此,MX2 提供了第一个固态系统,其中可以对组合谷赝自旋和真实自旋进行电气和动态控制,从而开辟了丰富的混合自旋和谷器件的可能性。拟议工作的重点是研究 MX2 单层、双层和异质结构中独特的自旋、谷和层赝自旋耦合,并考虑光子和自旋电子器件应用。具体目标和方法如下:(1)发展自旋谷电荷耦合传输的微观理论,以指导和模拟单层、双层、异质结构和混合系统的实验工作和合成; (2) 利用可控的带电和磁性掺杂剂开发最高质量的大面积晶体生长; (3)结合本征自旋和谷特性的电学和光学研究,确定混合自旋谷电子学的各种器件几何形状中单层和双层的基本参数; (4) 研究并展示将 MX2 与光子晶体腔等结构相结合的异质结构和混合光子器件中自旋和谷极化的操纵,解决包括跨界面自旋谷电荷传输、层间激子物理、集成中的激子极化激元等方面的问题纳米腔内的腔结构和强光子谷激子相互作用; (5) 开发 MX2 横向结器件,用于高效、可控、自旋和谷特定的光发射器、调制器和探测器。

项目成果

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David Cobden其他文献

David Cobden的其他文献

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{{ truncateString('David Cobden', 18)}}的其他基金

EAGER: BRAIDING: Majorana modes in monolayer topological insulator WTe2
渴望:编织:单层拓扑绝缘体 WTe2 中的马约拉纳模式
  • 批准号:
    1836697
  • 财政年份:
    2018
  • 资助金额:
    $ 150万
  • 项目类别:
    Standard Grant
MRI: Development of an instrument combining optics, transport and strain for studying quantum matter at low temperatures
MRI:开发一种结合光学、传输和应变的仪器,用于研究低温下的量子物质
  • 批准号:
    1725221
  • 财政年份:
    2017
  • 资助金额:
    $ 150万
  • 项目类别:
    Standard Grant
Adsorption on Individual Carbon Nanotubes
单个碳纳米管的吸附
  • 批准号:
    1206208
  • 财政年份:
    2012
  • 资助金额:
    $ 150万
  • 项目类别:
    Continuing Grant

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