SBIR Phase I: Ultra Low Defect Gallium Nitride Mediated by Metal Alloys

SBIR 第一阶段：金属合金介导的超低缺陷氮化镓

基本信息

批准号：
1415803
负责人：
Francisco Machuca
金额：
$ 15万
依托单位：
Tivra Corporation
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2014
资助国家：
美国
起止时间：
2014-07-01 至 2014-12-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1415803&HistoricalAwards=false
关键词：
SBIR Phase Ultra Low Defect

项目摘要

The broader impacts/commercial potential of this Small Business Innovation Research (SBIR) Phase I project is that the deposition techniques used to deposit the lattice matching materials are scalable in wafer area to 200mm and 300mm wafer processing and are already found in today's CMOS foundries. Both factors, using large area deposition process and leveraging fully depreciated CMOS fabs, lead to significant reduction in overall packaged device cost. In this fashion, these lattice matching materials on Si will result in a new industry standard wafer from a US company supplying globally 200mm and 300mm wafers to light emitting diode and power semiconductor industries.This Small Business Innovation Research (SBIR) Phase I project is focused on converting the surface of large area silicon wafers into a bulk-like quality Gallium Nitride (GaN). The wafer technology will be used by light emitting diode and power semiconductor manufacturers to grow the brightest and most efficient GaN based devices. The novel technology under this Phase I project is based on depositing a patent pending purely metallic alloy that both grades the lattice constant from Si to GaN and counter balances residual thermal mismatch to maintain a flat wafer. By removing both thermal and lattice mismatch, growth of low defect density GaN is promoted on large area wafers leading to bulk GaN quality material efficiencies.

该小型企业创新研究 (SBIR) 第一阶段项目的更广泛影响/商业潜力是，用于沉积晶格匹配材料的沉积技术可在晶圆区域扩展到 200mm 和 300mm 晶圆处理，并且已在当今的 CMOS 代工厂中使用。使用大面积沉积工艺和利用完全折旧的 CMOS 晶圆厂这两个因素都可以显着降低总体封装器件成本。通过这种方式，硅上的这些晶格匹配材料将产生新的行业标准晶圆，该晶圆由一家美国公司提供，该公司向全球发光二极管和功率半导体行业供应 200mm 和 300mm 晶圆。该小型企业创新研究 (SBIR) 第一阶段项目的重点是将大面积硅晶圆表面转化为块状质量氮化镓 (GaN)。发光二极管和功率半导体制造商将使用该晶圆技术来生长最亮、最高效的 GaN 基器件。该第一阶段项目的新技术基于沉积一种正在申请专利的纯金属合金，该合金既可以将晶格常数从 Si 分级到 GaN，又可以平衡残余热失配以保持晶圆平坦。通过消除热失配和晶格失配，可促进大面积晶圆上低缺陷密度 GaN 的生长，从而提高体质 GaN 材料的效率。