Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys

合作研究：B-III-N宽带隙半导体合金性能的基础研究

• 批准号: 1411022
• 负责人: Fernando Ponce
• 金额: $ 21万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-01 至 2017-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1411022&HistoricalAwards=false
• 关键词: Collaborative; Research; Fundamental; Studies; Properties

Non-technical Description: This collaborative research project studies an underexplored semiconductor materials system that involves boron incorporation in the four-element alloys of BAlGaN. These materials are a new generation of III-V alloy system compared to the AlInGaN alloys that have been developed to provide high-efficiency lighting. The solid-state illumination and lighting technology, based upon AlInGaN alloys, has found wide practical applications in automotive, liquid-crystal-display back panel, mobile communications and signage illumination, and will soon dominate in general lighting. However, there are still important limitations for AlInGaN alloy materials. This research project explores the advantages of incorporation of boron into these alloys with the ultimate goal to achieve better strain matching in heterostructures, higher efficiency and potentially p-type doping in the new alloy system. The research is integrated with the educational activities including research training for graduate and undergraduate students in the growth, characterization, and processing of these novel materials, and various outreach programs at both Georgia Institute of Technology and Arizona State University.Technical Description: The primary focus of this research project is to study the physical, chemical, and electronic properties of high-quality thin films of boron-containing III-nitride semiconductor ternary and quaternary alloys in the technologically important range of compositions and to develop an in-depth understanding of fundamental materials science for improved optoelectronic device designs. The research team uses advanced metalorganic chemical vapor deposition (MOCVD) epitaxial film growth systems, and performs in-depth studies of the effects of growth conditions, substrate materials, substrate orientation, and doping. The materials properties are studied in detail using state-of-the-art nanoscale characterization tools: the crystal structure is studied using atomic-resolution aberration-corrected transmission electron microscopy; the electronic band structure is determined by electron holography; and the optical properties are measured by cathodoluminescence with high spatial- and temporal-resolution. Exploring the effects of compositional homogeneity, phase separation, and piezoelectric fields is also included in the research. The microstructural properties are correlated with the optoelectronic properties to understand the role of growth parameters on overall device performance.

非技术描述：该合作研究项目研究了一种尚未充分开发的半导体材料系统，该系统涉及 BAlGaN 四元素合金中的硼掺入。与为提供高效照明而开发的 AlInGaN 合金相比，这些材料是新一代 III-V 合金系统。基于AlInGaN合金的固态照明和照明技术已在汽车、液晶显示器背板、移动通信和标牌照明等领域得到了广泛的实际应用，并将很快在普通照明领域占据主导地位。 然而，AlInGaN合金材料仍然存在重要的局限性。该研究项目探索了将硼掺入这些合金中的优势，最终目标是在新合金体系中实现更好的异质结构应变匹配、更高的效率和潜在的 p 型掺杂。该研究与教育活动相结合，包括为研究生和本科生提供有关这些新材料的生长、表征和加工的研究培训，以及佐治亚理工学院和亚利桑那州立大学的各种外展项目。 技术描述：主要焦点该研究项目的目的是研究技术上重要的成分范围内的含硼 III 族氮化物半导体三元和四元合金的高质量薄膜的物理、化学和电子性能，并深入了解基本原理材料科学改进光电器件设计。研究团队采用先进的金属有机化学气相沉积（MOCVD）外延薄膜生长系统，对生长条件、衬底材料、衬底取向和掺杂的影响进行了深入研究。使用最先进的纳米级表征工具详细研究材料特性：使用原子分辨率像差校正透射电子显微镜研究晶体结构；通过电子全息术确定电子能带结构；光学特性通过具有高空间和时间分辨率的阴极发光来测量。研究还包括探索成分均匀性、相分离和压电场的影响。微观结构特性与光电特性相关，以了解生长参数对整体器件性能的作用。