Nonlinear Photonic Crystal Nanocavities and Waveguides

非线性光子晶体纳米腔和波导

• 批准号: 1101341
• 负责人: Galina Khitrova
• 金额: $ 32.58万
• 依托单位: University of Arizona
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-06-01 至 2014-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1101341&HistoricalAwards=false
• 关键词: Nonlinear; Photonic; Crystal; Nanocavities; Waveguides

Objective. Evaluate the efficacy of phosphorous-based MBE-grown layers and quantum dots for quantum-limit strong coupling between a single quantum dot and a photonic crystal slab nanocavity (solid-state entanglement on a chip).Intellectual Merit. Following demonstration of strong coupling in 2004 in Tucson, worldwide progress toward improving the ratio of vacuum Rabi splitting to linewidth, as needed for practical applications in switching and quantum information, has been disappointingly slow. Since the limitation on linewidth is cavity Q, reported values as high as 700,000 for GaAs-slab/GaInP-sacrificial-layer empty cavities compared with typically 30,000 in GaAs/AlGaAs motivate this project to optimize the growth of P-based layers and dots for strong coupling. Success could transform the whole field of semiconductor cavity QED. Much of the P-based growth has been by MOCVD (apparently adequate for electronics and lasers), but the surfaces are too rough for fabrication of high-Q cavities. This project would first grow flat layers for empty high-Q cavities and then grow dots within the center of the slab.Broader Impacts. The principal impact of success would be much more robust semiconductor quantum devices, much less susceptible to dephasing caused by photon escape from low-Q cavities. This would make the devices much more useful for single photon switches and for quantum state transfer between internal states of separated cavities. Training of graduate students in quantum optics and the required experimental skills of cryogenics and spectroscopy is another important impact. Mentoring RET teachers and REU students helps attract bright students into scientific and engineering careers.

客观的。评估基于磷的MBE生长层和量子点的功效，以在单个量子点和光子晶体板纳米腔（芯片上的固态纠缠）之间进行量子限制强耦合。在2004年在图森（Tucson）中展示了强耦合之后，全球在改善真空狂犬分裂与线宽之比的过程中，根据需要在切换和量子信息方面的实际应用，令人失望地缓慢。由于线宽的局限性是腔Q，因此GAAS-SLAB/GAELP-SCRACTRARE-SPRAINE腔的值高达700,000，而GAAS/ALGAA中的通常为30,000个，可以激励该项目以优化基于P的层和点的生长，以实现强耦合。成功可以改变半导体腔QED的整个领域。基于P的大部分生长都是由MOCVD（显然适合电子和激光器），但是表面太粗糙，无法制造高Q空腔。该项目将首先生长为空的高Q空腔的平坦层，然后在平板中心内生长点。成功的主要影响将更加可靠的半导体量子设备，这较不容易受到从低Q腔中的光子逃生引起的脱落。这将使设备对于单个光子开关和分离腔内内部状态之间的量子状态转移更加有用。对研究生进行量子光学的培训以及低温和光谱学所需的实验技能是另一个重要影响。指导RET老师和REU学生有助于吸引聪明的学生进入科学和工程职业。