SBIR Phase IB: Nanometer-Level Fidelity in Maskless Lithography

SBIR IB 阶段：无掩模光刻中的纳米级保真度

• 批准号: 1003123
• 负责人: Henry Smith
• 金额: $ 5万
• 依托单位: LUMARRAY LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1003123&HistoricalAwards=false
• 关键词: SBIR; Phase; IB; Nanometer; Level

This Small Business Innovation Research Phase I project will investigate the feasibility of achieving, by means of precision measurement and software corrections, sub-1nm feature-size control and 1nm feature-placement precision using its maskless-lithography tool based on zone-plate-array lithography (ZPAL). Several components of the semiconductor industry currently require nanometer-level patterning fidelity, in particular imprint templates, photonic devices and photonic intrachip communication. Future nanotechnology applications will also require such fidelity. By incorporating absorbance-modulation optical lithography into ZPAL, lithographic resolution below 20 nm should be achieved, enabling ZPAL to outperform electron-beam lithography in the important metrics of: throughput, resolution, overlay, feature-size control, feature-placement accuracy and size of field.

该小型企业创新研究第一阶段项目将研究通过精密测量和软件校正，使用基于波带板阵列的无掩模光刻工具实现亚1纳米特征尺寸控制和1纳米特征放置精度的可行性光刻（ZPAL）。目前，半导体行业的多个组件需要纳米级图案保真度，特别是压印模板、光子器件和光子芯片内通信。未来的纳米技术应用也将需要这种保真度。通过将吸光度调制光学光刻技术融入 ZPAL，可实现低于 20 nm 的光刻分辨率，从而使 ZPAL 在以下重要指标上优于电子束光刻：吞吐量、分辨率、覆盖、特征尺寸控制、特征放置精度和尺寸的字段。