SBIR Phase I: Multi-wavelength Infrared thermal Detectors and Imagers

SBIR 第一阶段：多波长红外热探测器和成像仪

• 批准号: 0945472
• 负责人: Jiguang Li
• 金额: $ 10万
• 依托单位: NANORODS,L.L.C.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-01-01 至 2010-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0945472&HistoricalAwards=false
• 关键词: SBIR; Phase; Multi; wavelength; Infrared

This Small Business Innovation Research (SBIR) Phase I project will develop a new infrared (IR) radiation sensor technology, which will allow the development of a new class of low-cost multi-wavelength thermal detectors which are also sensitive to light polarization. This technology will allow radiation detection from the near-IR to long-wave IR, a capability that is absent in competing detectors. Amorphous silicon and vanadium dioxide has been the dominant materials used for infrared light detection since the 1980s. The disadvantages of such detectors are: 1) insensitivity to the spectral content and polarization of the incident radiation, 2) difficulty in further miniaturization of the sensing pixels. This project will use a combination of nanomaterial and amorphous silicon layers as a new type of infrared sensing layer which can be integrated into silicon thermal detectors and is expected to overcome these limitations. This project will demonstrate: 1) Fabrication and integration of the new radiation sensing layers to create a series of thermal detectors; 2) Enhanced light absorption and spectral sensitivity at multiple IR wavelengths; 3) Size reduction of the sensing pixel to 10 microns; and 4) polarization sensitivity for incident light at 3 micron wavelengths. The broader impact/commercial potential of this project is the development of uncooled multi-color thermal detectors which are inexpensive and feature spectral and polarization sensitivity. These devices have the potential to displace expensive photon-based semiconductor IR detectors in many applications. The proposed technology will allow production of multi-color detectors on a single silicon wafer as well as sensing pixel miniaturization that will tremendously impact the fabrication cost, imaging resolution and device size. Successful commercialization of this thermal detection technology will substantially impact the field of low cost IR detection and imaging in applications such as fire detection, public health, environmental monitoring, space missions, industrial process monitoring, and security and military areas.

这项小型企业创新研究（SBIR）I阶段项目将开发一种新的红外（IR）辐射传感器技术，这将允许开发一类新的低成本多波长热检测器，这些探测器也对光线极化也敏感。 该技术将允许从近红外到长波IR的辐射检测，这是竞争探测器中缺乏的功能。 自1980年代以来，无定形硅和二氧化钒是用于红外光检测的主要材料。 此类探测器的缺点是：1）对入射辐射的光谱含量和极化不敏感，2）难以进一步微型化像素。 该项目将使用纳米材料和无定形硅层作为一种新型红外感测层，可以集成到硅热检测器中，并有望克服这些限制。 该项目将证明：1）新辐射感应层的制造和整合以创建一系列热检测器； 2）在多个IR波长下增强了光吸收和光谱灵敏度； 3）将传感像素的尺寸降低至10微米； 4）在3微米波长下对入射光的极化灵敏度。 该项目的更广泛的影响/商业潜力是开发未冷的多色热探测器，这些探测器廉价且具有光谱和极化敏感性。 这些设备有可能在许多应用中取代昂贵的基于光子的半导体IR检测器。 提出的技术将允许在单个硅晶片上生产多色探测器，并允许感应像素微型化，从而极大地影响制造成本，成像分辨率和设备尺寸。 该热检测技术的成功商业化将在诸如火灾检测，公共卫生，环境监测，太空任务，工业过程监控以及安全和军事领域等应用中的低成本检测和成像领域实质上影响。