Self-Controlled Surface-Selective Atomic Layer Deposition for Integrated Vertical Nanowire Field Effect Transistors

用于集成垂直纳米线场效应晶体管的自控表面选择性原子层沉积

• 批准号: 0926245
• 负责人: Xudong Wang
• 金额: $ 15.9万
• 依托单位: University of Wisconsin-Madison
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0926245&HistoricalAwards=false
• 关键词: Self; Controlled; Surface; Selective; Atomic; Self; Controlled; Surface; Selective; Atomic

The objective of this proposed research is to gain fundamental understanding of how gaseous surface passivation molecules interact with nanowire arrays in an atomic layer deposition system. Specifically, the goal will be accomplished by: (1) understanding how the passivation molecules diffuse among ZnO nanowires with different densities; (2) determining the passivation ability of the chosen passivation precursor with respect to the sticking coefficient of the precursors; (3) correlating the surface selective accuracy to the reactivity of the precursors. In addition, integrated vertical NW FETs will be fabricated characterized to optimize the deposition condition for the best dielectric layer quality and device performance. The final outcome of this project is expected to realize a ?smart? thin film deposition technique that can ?self-choosing? deposition area. This research would lead to a general, simple and low-cost fabrication technique for large-scale integrating semiconductor nanowires into three dimensional nanoelectronic systems. Understandings established in this research would pave the path to a novel technique for selectively functionalizing nanowire surfaces in large scale by vapor deposition methods. The research discovery will be integrated in the PI?s graduate course about Nanomaterials and Nanotechnology. This research will provide an excellent opportunity for training graduate and undergraduate students with fabrication and characterization technologies in the frontier of nanoscience. The advanced atomic layer deposition facility and techniques established in this research will be shared with PI?s colleagues to enhance the infrastructure for advanced materials and nanotechnology research and education. A partnership will be established between the PI?s group and K-12 school teachers and students through this research program.

这项拟议的研究的目的是对气态表面钝化分子如何与原子层沉积系统中的纳米线阵列相互作用进行基本了解。具体而言，将通过以下方式实现目标：（1）了解钝化分子如何在具有不同密度的ZnO纳米线之间扩散； （2）确定所选钝化前体相对于前体的粘附系数的钝化能力； （3）将表面选择性精度与前体的反应性相关联。此外，将制造集成的垂直NW FET，以优化最佳介电层质量和设备性能的沉积条件。该项目的最终结果有望实现吗？可以自我选择的薄膜沉积技术？沉积区域。这项研究将导致一种通用，简单和低成本的制造技术，用于大规模将半导体纳米线整合到三维纳米电子系统中。这项研究中建立的理解将铺平一种新技术的途径，以通过蒸气沉积方法大规模地将纳米线表面进行官能化。研究发现将集成到有关纳米材料和纳米技术的PI的研究生课程中。这项研究将为纳米科学边界的培训研究生和本科生提供培训和本科生的绝佳机会。这项研究中建立的先进的原子层沉积设施和技术将与PI同事共享，以增强先进材料和纳米技术研究和教育的基础设施。通过此研究计划，将在PI组与K-12学校教师和学生之间建立合作伙伴关系。