Magnetic and Magnetoelectric Interactions at Interfaces in Ideal Antiferromagnetic Systems

理想反铁磁系统中界面处的磁和磁电相互作用

• 批准号: 0903861
• 负责人: David Lederman
• 金额: $ 23万
• 依托单位: West Virginia University Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0903861&HistoricalAwards=false
• 关键词: Magnetic; Magnetoelectric; Interactions; Interfaces; Ideal

TECHNICAL ABSTRACTThis award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). Fundamental research in magnetic nanostructures has led to devices with new functionality due to the development of the ability to use the spin of the electron to transmit information and thus make novel electronic devices (spintronics). In recent years there has been much interest in using multiferroic materials, which are simultaneously magnetic and ferroelectric, to further control spintronic devices with electric fields. Most intrinsic multiferroic materials are oxide insulators with a weak magnetic-ferroelectric coupling, and therefore there is a need to study alternative multiferroic systems. Here, BaMF4 (M = transition metal) multiferroic thin films will be studied. Because it is relatively easy to modify the magnetic structure of these materials while keeping their crystalline structure unchanged, the nature of the magnetic-ferroelectric coupling within the bulk of the film and at the interfaces will be discerned and optimized. In addition to standard magnetometry and ferroelectric measurements, neutron scattering will be used to determine the magnetic structure of these antiferromagnetic and multiferroic materials. Tunnel junctions of these materials will also be studied in an attempt to perform spectroscopic measurements of their magnetic and magnetoelectric excitations. This project will contribute to the effort of maintaining American competititveness in science and technology fields by participating in educational and outreach programs at West Virginia University geared towards attracting and retaining underrepresented minority students at the undergraduate and graduate levels. These include summer research programs for both undergraduate and graduate students as well as recruiting outstanding minority graduate students for year-long fellowships.NON-TECHNICAL ABSTRACTThis award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). Magnetic nanostructures have been the basis of several recent technological innovations that have led to small, more efficient data storage and electronic devices. Recently, there has been much interest developing new materials, called multiferroics, that not only have a strong magnetic response, but also respond to a change in voltage, which would enable the fabrication of electronic devices with multiple functionalities; that is, devices that respond to both electronic and magnetic signals. This project will consist of fabricating multiferroic nanostructures, based on fluoride compounds rather than the usual oxides, and studying their magnetic and electronic properties. By optimizing the magnetic response of these materials to applied voltages, electronic and data storage devices that are faster and more power efficient than current devices will be developed. This project will contribute to the effort of maintaining American competititveness in science and technology fields by participating in educational and outreach programs at West Virginia University geared towards attracting and retaining underrepresented minority students at the undergraduate and graduate levels. These include summer research programs for both undergraduate and graduate students as well as recruiting outstanding minority graduate students for year-long fellowships.

技术摘要这一奖项是根据2009年《美国复苏与再投资法》（公法111-5）资助的。磁性纳米结构中的基本研究导致具有新功能的设备，这是由于使用电子旋转来传输信息并从而制作新型电子设备（Spintronics）的能力。 近年来，人们对使用同时磁性和铁电的多表色材料对用电场进一步控制自旋装置。 大多数固有的多效材料是具有弱磁性磁耦合的氧化物绝缘子，因此需要研究替代性多种心系统。 在这里，将研究BAMF4（M =过渡金属）多性薄膜。 由于在保持晶体结构不变的同时修改这些材料的磁性结构相对容易，因此将识别和优化胶片内部和界面内的磁性 - 有线耦合的性质。 除了标准磁力测定法和铁电测量值外，中子散射还将用于确定这些抗铁磁和多效材料的磁性结构。 还将研究这些材料的隧道连接，以试图对其磁性和磁电兴奋进行光谱测量。该项目将通过参加西弗吉尼亚大学的教育和外展计划来努力维持美国在科学技术领域的竞争，旨在吸引和保留本科和研究生级别的代表性不足的少数族裔学生。其中包括针对本科生和研究生的夏季研究计划，以及为期一年的奖学金招募杰出的少数族裔研究生。新技术摘要这项奖项是根据2009年《美国复苏和再投资法》（公共法第111-5号）资助的。磁性纳米结构一直是最近几项技术创新的基础，这些创新导致了较小，更有效的数据存储和电子设备。 最近，人们引起了很大的兴趣开发新材料，称为多铁染料，这些材料不仅具有强烈的磁反应，而且还响应了电压的变化，这将使具有多种功能的电子设备的制造。也就是说，对电子信号和磁信号都响应的设备。 该项目将包括基于氟化物化合物而不是通常的氧化物制造多性纳米结构，并研究其磁性和电子特性。 通过优化这些材料对应用电压，电子和数据存储设备的磁响应，它们将比当前设备更快，更有效。该项目将通过参加西弗吉尼亚大学的教育和外展计划来努力维持美国在科学技术领域的竞争，旨在吸引和保留本科和研究生级别的代表性不足的少数族裔学生。其中包括针对本科生和研究生的夏季研究计划，以及为长达一年的奖学金招募杰出的少数族裔研究生。