SGER: Frequency tunable terahertz resonator devices

SGER：频率可调谐太赫兹谐振器装置

• 批准号: 0824920
• 负责人: Eva Schubert
• 金额: --
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-05-01 至 2009-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0824920&HistoricalAwards=false
• 关键词: SGER; Frequency; tunable; terahertz; resonator

AbstractECCS-0824920E. Schubert, University of Nebraska-LincolnObjectiveThis proposal focuses on design, fabrication, and proof-of-concept for novel frequency-tunable terahertz resonator structures made from chiral nanocomposit materials (CNM). Nanoscale arrangement and hybridization creates artificial materials (nanostructure electrically conductive coils) with entirely new properties. Applications are envisioned for areas such as nano-photonics, nano-electromechanics, nano-magnetics, nano-electromagnetics, and nano-sensors, for example. The goal of the proposal is to show the feasibility of a frequency-tunable CNM terahertz (THz) resonator device structure using conductive nanocoils and Schottky contact capacitors produced from the depletion layer at the interface between the coil and semiconductor substrate. The goal will be reached in the following steps: 1. Investigation of depletion layer properties at the interface between aluminum sculptured thin films and p-type doped silicon substrates and manipulation of the depletion layer thickness by an external applied electric field. 2. Filling and cross-linking the polymer polyvinyl phenol (PVP) into the sculptured thin film and demonstration of resonance frequency tuning in hybrid resonator device structure. 3. Reduction of the capacitor area by using patterned substrates for glancing angle deposition of aluminum nanocoils on p-type silicon substrates. 4. First demonstration of tunable terahertz resonator devices from chiral nanostructure hybrid materials with reduced capacitor area by means of terahertz ellipsometry. The frequency tuning will be obtained by applying an external electrical bias to the depletion layer. Intellectual Merit The research plan will lead to breakthroughs for the design and performance of new hybrid electromagnetic devices based on advances for revolutionary new electromagnetic materials from chiral nanostructure hybrids. The active THz resonator device structures may be incorporated in THz sources and detectors and close thereby an current gap electronic device technology. Broader impact Terahertz devices are very promising for applications in medicine, remote sensing, imaging, and satellite communications, and they might be also useful for homeland security tasks. Nonetheless the terahertz spectral region is one of the most under-utilized frequency ranges. The proposed active THz resonator device structures will contribute to enhance THz technology with an immediate influence on the society.

AbstractECCS-0824920E。舒伯特，内布拉斯加州大学 - 林肯非注射夫人的提议着重于设计，制造和概念验证，用于由手性纳米复合材料（CNM）制成的新型频率可触发的Terahertz谐振器结构。纳米级的布置和杂交创建具有全新特性的人工材料（纳米结构导电线圈）。例如，纳米光子学，纳米电子力学，纳米 - 磁性，纳米 - 电磁学和纳米传感器等领域设想了应用。该提案的目的是使用导电纳米线圈和schottky接触电容器在线圈和半导体底物之间的界面上耗尽层产生的导电纳米固体和schottky接触电容器的可行性。将在以下步骤中实现该目标：1。对铝制雕刻薄膜和p型掺杂的硅底物的界面上的耗竭层特性进行研究，并通过外部施加的电场对耗尽层的厚度操纵。 2。将聚合物聚合酚（PVP）填充和交联融合薄膜中的聚合物聚合物（PVP），并演示混合谐振器设备结构中的谐振频率调整。 3。通过使用图案化的底物将铝纳米固体的角度在P型硅底物上扫视角度的降低。 4。首次演示来自手性纳米结构材料的可调式Terahertz谐振器设备，该材料具有降低的电容器区域，该材料是通过Terahertz椭圆法进行的。通过将外部电偏置应用于耗尽层，将获得频率调整。知识分子优点研究计划将根据手性纳米结构的革命性新电磁材料的进步，为新混合电磁设备的设计和性能带来突破。主动THZ谐振设备结构可以纳入THZ源和检测器，从而关闭当前的间隙电子设备技术。 Terahertz设备对医学，遥感，成像和卫星通信的应用非常有前途的更大影响，它们可能对国土安全任务也有用。尽管如此，Terahertz光谱区域是最不足的频率范围之一。拟议的主动THZ谐振器设备结构将有助于增强THZ技术，并立即影响社会。