STTR Phase II: Germyl Silanes - Enabling Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates, CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon Phot

STTR 第二阶段：Germyl 硅烷 - 为先进 CMOS 基板、CMOS 集成 MEMS 和纳米级量子点硅光子的化学气相沉积提供前驱体

• 批准号: 0750479
• 负责人: Cole Ritter
• 金额: --
• 依托单位: Voltaix, Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-04-01 至 2011-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0750479&HistoricalAwards=false
• 关键词: STTR; Phase; II; Germyl; Silanes

This Small Business Technology Transfer Phase II project will demonstrate pilot scale manufacture of germyl silane precursors and their use to create prototype semiconductor devices and thin films under low temperature and selective growth processing conditions. The project addresses a critical need for precursors and processes that deposit such films under low temperature conditions with throughput rates that are significantly higher than those offered by existing processes. The potential market for devices made with these technologies is predicted to exceed several billion dollars per year and exhibit double-digit growth rates over the next five years. Ge-rich SiGe films will enable higher clock speeds in microprocessors, lower power consumption in cell phones, silicon-based photonics, and more efficient solar cells.

这个小型企业技术转移阶段项目将证明生殖硅烷前体的初步量表制造，并用来在低温和选择性的生长处理条件下创建原型半导体设备和薄膜。该项目解决了对在低温条件下沉积此类膜的前体和过程的关键需求，其吞吐率明显高于现有过程。预计用这些技术制造的设备的潜在市场每年将超过数十亿美元，并在未来五年内具有两位数的增长率。富含GE的SIGE膜将使微处理器，手机的较低功耗，基于硅的光子学和更有效的太阳能电池的较高时钟速度。