STTR PHASE I: Nanoscale Silver Pastes for Low-Temperature Joining of Power Semiconductor Devices

STTR 第一阶段：用于功率半导体器件低温连接的纳米级银浆

• 批准号: 0740927
• 负责人: Susan Luo
• 金额: --
• 依托单位: NBE Technologies, LLC
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-01-01 至 2008-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0740927&HistoricalAwards=false
• 关键词: STTR; PHASE; Nanoscale; Silver; Pastes

This Small Business Technology Transfer (STTR) Phase I project will investigate the feasibility of employing novel silver pastes for joining power semiconductor devices to achieve 5 times higher temperature cycling capability, 3 times better total module resistance, and device junction temperature over 175 degrees Celsius. A sintering technology for joining semiconductor chips, now being implemented in manufacturing lines of some major European companies, requires a 120-ton press to lower the sintering temperature of silver powders. This significantly complicates the manufacturing process and places critical demands on substrate flatness and thickness of the chips. This project uses materials that can be sintered below 270 degrees Celsius under ambient pressure and have 5 times better thermal and electrical properties than widely used solder alloys, thus will have great commercial potential to improve the electronic assembly process and products. The broader impacts/commercial potential is to the electronics manufacturers in the United States by providing a low-cost manufacturing process for low-temperature sintering technology for joining devices.

这个小型企业技术转移（STTR）I期项目将调查使用新型的银色糊剂连接功率半导体设备的可行性，以达到5倍更高的温度循环能力，提高总模块阻力的3倍，并超过175摄氏度的设备连接温度。加入半导体芯片的烧结技术，现在已在一些主要欧洲公司的制造业线中实施，需要120吨重的新闻来降低银色粉末的烧结温度。这显着使制造过程变得复杂，并对芯片的基材平坦度和厚度提出了关键需求。该项目使用可以在环境压力下烧结以下270摄氏度的材料，并且具有比广泛使用的焊料合金的热和电性能好5倍，因此将具有改善电子组装过程和产品的巨大商业潜力。更广泛的影响/商业潜力是通过为加入设备的低温烧结技术提供低成本制造工艺，对美国的电子制造商提供了更广泛的影响。