GOALI: Germanium-on-insulator tunneling transistors

GOALI：绝缘体上锗隧道晶体管

• 批准号: 0701635
• 负责人: Alexander Zaslavsky
• 金额: $ 30万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2007
• 资助国家: 美国
• 起止时间: 2007-06-01 至 2011-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0701635&HistoricalAwards=false
• 关键词: GOALI; Germanium; insulator; tunneling; transistors

The objective of the proposed research is to investigate a new class of semiconductor devices compatible with dominant silicon technology -- tunneling transistors fabricated in epitaxial germanium-on-insulator channels. These devices are not constrained, in principle, by the subthreshold swing limit of standard field effect transistors, so there is the potential of obtaining large on/off current ratios at room temperature while reducing the power supply voltage and hence the power consumption of large integrated circuits. The enabling approach involves the use of ultrathin single-crystal germanium-on-insulator channels combined with lattice-matched epitaxial high- dielectrics, all grown on silicon substrates. Intellectual merit: Although silicon-based tunneling transistors are a topic of current research in industry, germanium-on-insulator devices are both unexplored and promising, because the smaller Ge bandgap promises orders of magnitude higher tunneling current at the same power supply voltage and current drive is a key metric for downscaled transistors, tunneling or field-effect, that will determine how much device scaling will help in the future. Another interesting aspect of tunneling transistors is that they can dispense with the inversion channel altogether, greatly reducing the capacitance, which may prove of interest for high-speed analog amplifiers. Planar lateral tunneling transistors, with and without an inversion channel, fabricated in all-epitaxial Ge-on-insulator heterostructures will be studied by the combined IBM-Brown research team, which has complementary expertise and an existing close co-PI collaboration on Ge devices. Broader Impact: The proposed research will gauge the technological potential of germanium-based tunneling transistors compared to standard field-effect devices. The insertion of alternative channel materials, such as Ge, is a key part of the silicon technology roadmap. The alternative tunneling devices to be studied maintain VLSI compatibility and room temperature operation, making them viable for hybrid electronic circuits. The proposed research will have an educational impact, with Brown graduate students interacting closely with IBM Research (including summer internships), and undergraduates gaining research experience, including undergraduates from minority institutions identified through the Brown MRSEC, which has a focused outreach program.

拟议研究的目的是研究与主流硅技术兼容的新型半导体器件——在绝缘体上外延锗通道中制造的隧道晶体管。 原则上，这些器件不受标准场效应晶体管的亚阈值摆幅限制的限制，因此有可能在室温下获得大的开/关电流比，同时降低电源电压，从而降低大型集成器件的功耗。电路。 该实现方法涉及使用超薄单晶绝缘体上锗通道与晶格匹配外延高电介质相结合，所有这些都生长在硅衬底上。 智力优势：虽然硅基隧道晶体管是当前工业研究的一个主题，但绝缘体上的锗器件尚未开发且前景广阔，因为较小的Ge带隙有望在相同的电源电压和电流下实现更高数量级的隧道电流驱动器是缩小晶体管、隧道效应或场效应的关键指标，它将决定器件尺寸缩小对未来有多大帮助。 隧道晶体管的另一个有趣的方面是它们可以完全省去反相通道，从而大大减少电容，这可能会引起高速模拟放大器的兴趣。 IBM-Brown 联合研究团队将研究采用全外延绝缘体上 Ge 异质结构制造的带或不带反转沟道的平面横向隧道晶体管，该团队在 Ge 器件方面拥有互补的专业知识和现有的密切联合 PI 合作。更广泛的影响：拟议的研究将评估锗基隧道晶体管与标准场效应器件相比的技术潜力。插入替代沟道材料（例如Ge）是硅技术路线图的关键部分。 待研究的替代隧道器件保持了 VLSI 兼容性和室温操作，使其适用于混合电子电路。 拟议的研究将产生教育影响，布朗大学的研究生将与 IBM 研究院密切互动（包括暑期实习），本科生将获得研究经验，其中包括通过布朗 MRSEC 确定的少数族裔机构的本科生，该机构有一个重点推广计划。